DK0735590T3 - Bipolær siliciumtransistor - Google Patents
Bipolær siliciumtransistorInfo
- Publication number
- DK0735590T3 DK0735590T3 DK96103580T DK96103580T DK0735590T3 DK 0735590 T3 DK0735590 T3 DK 0735590T3 DK 96103580 T DK96103580 T DK 96103580T DK 96103580 T DK96103580 T DK 96103580T DK 0735590 T3 DK0735590 T3 DK 0735590T3
- Authority
- DK
- Denmark
- Prior art keywords
- silicon transistor
- bipolar silicon
- bipolar
- transistor
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/919—Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19511251A DE19511251A1 (de) | 1995-03-27 | 1995-03-27 | Bipolarer Siliziumtransistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0735590T3 true DK0735590T3 (da) | 2003-10-27 |
Family
ID=7757904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK96103580T DK0735590T3 (da) | 1995-03-27 | 1996-03-07 | Bipolær siliciumtransistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US5965929A (da) |
EP (1) | EP0735590B1 (da) |
JP (1) | JPH08274111A (da) |
KR (1) | KR960036118A (da) |
DE (2) | DE19511251A1 (da) |
DK (1) | DK0735590T3 (da) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009029900A1 (en) * | 2007-08-31 | 2009-03-05 | Applied Materials, Inc. | Improved methods of emitter formation in solar cells |
US8461032B2 (en) * | 2008-03-05 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Use of dopants with different diffusivities for solar cell manufacture |
US20100304527A1 (en) * | 2009-03-03 | 2010-12-02 | Peter Borden | Methods of thermal processing a solar cell |
CN102315256B (zh) * | 2010-07-08 | 2014-05-14 | 旺宏电子股份有限公司 | 双极接面晶体管装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2917455A1 (de) * | 1979-04-30 | 1980-11-13 | Ibm Deutschland | Verfahren zur vollstaendigen ausheilung von gitterdefekten in durch ionenimplantation von phosphor erzeugten n-leitenden zonen einer siliciumhalbleitervorrichtung und zugehoerige siliciumhalbleitervorrichtung |
US4379727A (en) * | 1981-07-08 | 1983-04-12 | International Business Machines Corporation | Method of laser annealing of subsurface ion implanted regions |
JPS5933860A (ja) * | 1982-08-19 | 1984-02-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS5987856A (ja) * | 1982-11-10 | 1984-05-21 | Toshiba Corp | 半導体装置の製造方法 |
JPS59152665A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 半導体装置とその製造方法 |
JPS6063961A (ja) * | 1983-08-30 | 1985-04-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2504553B2 (ja) * | 1989-01-09 | 1996-06-05 | 株式会社東芝 | バイポ―ラトランジスタを有する半導体装置の製造方法 |
US5047357A (en) * | 1989-02-03 | 1991-09-10 | Texas Instruments Incorporated | Method for forming emitters in a BiCMOS process |
US5150184A (en) * | 1989-02-03 | 1992-09-22 | Texas Instruments Incorporated | Method for forming emitters in a BiCMOS process |
JPH04159721A (ja) * | 1990-10-23 | 1992-06-02 | Nec Corp | 半導体装置 |
JPH0529327A (ja) * | 1991-07-19 | 1993-02-05 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1995
- 1995-03-27 DE DE19511251A patent/DE19511251A1/de not_active Ceased
-
1996
- 1996-03-07 EP EP96103580A patent/EP0735590B1/de not_active Expired - Lifetime
- 1996-03-07 DK DK96103580T patent/DK0735590T3/da active
- 1996-03-07 DE DE59610612T patent/DE59610612D1/de not_active Expired - Fee Related
- 1996-03-22 JP JP8091846A patent/JPH08274111A/ja active Pending
- 1996-03-26 KR KR1019960008246A patent/KR960036118A/ko active IP Right Grant
- 1996-03-27 US US08/623,905 patent/US5965929A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19511251A1 (de) | 1996-10-02 |
EP0735590A2 (de) | 1996-10-02 |
US5965929A (en) | 1999-10-12 |
EP0735590A3 (de) | 1996-12-18 |
DE59610612D1 (de) | 2003-08-28 |
JPH08274111A (ja) | 1996-10-18 |
KR960036118A (ko) | 1996-10-28 |
EP0735590B1 (de) | 2003-07-23 |
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