ITRM940160A0 - Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio. - Google Patents
Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio.Info
- Publication number
- ITRM940160A0 ITRM940160A0 ITRM940160A ITRM940160A ITRM940160A0 IT RM940160 A0 ITRM940160 A0 IT RM940160A0 IT RM940160 A ITRM940160 A IT RM940160A IT RM940160 A ITRM940160 A IT RM940160A IT RM940160 A0 ITRM940160 A0 IT RM940160A0
- Authority
- IT
- Italy
- Prior art keywords
- oxygen
- procedure
- reducing
- single crystal
- silicon single
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000003780 insertion Methods 0.000 title 1
- 230000037431 insertion Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 title 1
- 239000001301 oxygen Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4309769A DE4309769A1 (de) | 1993-03-25 | 1993-03-25 | Verfahren und Vorrichtung zur Verringerung des Sauerstoffeinbaus in einen Einkristall aus Silicium |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM940160A0 true ITRM940160A0 (it) | 1994-03-23 |
ITRM940160A1 ITRM940160A1 (it) | 1995-09-23 |
IT1272189B IT1272189B (it) | 1997-06-16 |
Family
ID=6483872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM940160A IT1272189B (it) | 1993-03-25 | 1994-03-23 | Procedimento e dispositivo per la riduzione dell'inserimento di ossigeno in un monocristallo di silicio. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5477808A (it) |
JP (1) | JP2673221B2 (it) |
KR (1) | KR0143510B1 (it) |
DE (1) | DE4309769A1 (it) |
IT (1) | IT1272189B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096128A (en) * | 1997-06-06 | 2000-08-01 | Toshiba Ceramics Co., Ltd. | Silicon crystal, and device and method for manufacturing same |
JP4318768B2 (ja) | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5007200B2 (ja) * | 2007-10-31 | 2012-08-22 | 範八 松井 | テストプラグ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57179099A (en) * | 1981-04-28 | 1982-11-04 | Toshiba Corp | Manufacturing apparatus for silicon single crystal |
US4545849A (en) * | 1983-03-03 | 1985-10-08 | Motorola Inc. | Method for control of oxygen in silicon crystals |
JPS6259594A (ja) * | 1985-09-11 | 1987-03-16 | Sumitomo Electric Ind Ltd | 結晶の引上げ方法 |
JPH0719798B2 (ja) * | 1990-07-18 | 1995-03-06 | 新日本製鐵株式会社 | 微細金属球の配列方法 |
JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
JPH0442890A (ja) * | 1990-06-08 | 1992-02-13 | Sumitomo Metal Ind Ltd | 結晶成長装置 |
JPH0475356A (ja) * | 1990-07-17 | 1992-03-10 | Mitsubishi Electric Corp | 半導体装置 |
JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
JP2951793B2 (ja) * | 1992-02-25 | 1999-09-20 | 三菱マテリアル株式会社 | 単結晶引上装置 |
JPH05238875A (ja) * | 1992-02-25 | 1993-09-17 | Mitsubishi Materials Corp | 単結晶引上装置 |
-
1993
- 1993-03-25 DE DE4309769A patent/DE4309769A1/de not_active Withdrawn
-
1994
- 1994-02-28 US US08/203,220 patent/US5477808A/en not_active Expired - Fee Related
- 1994-03-10 KR KR1019940004678A patent/KR0143510B1/ko not_active IP Right Cessation
- 1994-03-22 JP JP6073775A patent/JP2673221B2/ja not_active Expired - Lifetime
- 1994-03-23 IT ITRM940160A patent/IT1272189B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR0143510B1 (ko) | 1998-07-15 |
JPH0710692A (ja) | 1995-01-13 |
US5477808A (en) | 1995-12-26 |
KR940022678A (ko) | 1994-10-21 |
DE4309769A1 (de) | 1994-09-29 |
ITRM940160A1 (it) | 1995-09-23 |
IT1272189B (it) | 1997-06-16 |
JP2673221B2 (ja) | 1997-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19980327 |