DE69428407D1 - Rauscharmer bipolarer Transistor - Google Patents

Rauscharmer bipolarer Transistor

Info

Publication number
DE69428407D1
DE69428407D1 DE69428407T DE69428407T DE69428407D1 DE 69428407 D1 DE69428407 D1 DE 69428407D1 DE 69428407 T DE69428407 T DE 69428407T DE 69428407 T DE69428407 T DE 69428407T DE 69428407 D1 DE69428407 D1 DE 69428407D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
low noise
noise bipolar
transistor
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428407T
Other languages
English (en)
Other versions
DE69428407T2 (de
Inventor
Flavio Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69428407D1 publication Critical patent/DE69428407D1/de
Publication of DE69428407T2 publication Critical patent/DE69428407T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69428407T 1993-09-27 1994-07-21 Rauscharmer bipolarer Transistor Expired - Fee Related DE69428407T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830393A EP0646967B1 (de) 1993-09-27 1993-09-27 Geräuscharmer pnp-Transistor

Publications (2)

Publication Number Publication Date
DE69428407D1 true DE69428407D1 (de) 2001-10-31
DE69428407T2 DE69428407T2 (de) 2002-05-29

Family

ID=8215224

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69326340T Expired - Fee Related DE69326340T2 (de) 1993-09-27 1993-09-27 Geräuscharmer pnp-Transistor
DE69428407T Expired - Fee Related DE69428407T2 (de) 1993-09-27 1994-07-21 Rauscharmer bipolarer Transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69326340T Expired - Fee Related DE69326340T2 (de) 1993-09-27 1993-09-27 Geräuscharmer pnp-Transistor

Country Status (4)

Country Link
US (2) US5828124A (de)
EP (1) EP0646967B1 (de)
JP (1) JPH07231000A (de)
DE (2) DE69326340T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100258436B1 (ko) 1996-10-11 2000-06-01 김덕중 상보형 쌍극성 트랜지스터 및 그 제조 방법
US5945726A (en) * 1996-12-16 1999-08-31 Micron Technology, Inc. Lateral bipolar transistor
US6034413A (en) * 1997-02-27 2000-03-07 Texas Instruments Incorporated High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity
EP1071133B1 (de) 1999-07-21 2010-04-21 STMicroelectronics Srl Verfahren zum Herstellen von CMOS Transistoren nichtflüchtiger Speicher und von vertikalen Bipolartransistoren mit hohem Verstärkungsfaktor
JP3681942B2 (ja) * 1999-12-28 2005-08-10 松下電器産業株式会社 バイポーラトランジスタの製造方法
JP3367500B2 (ja) * 2000-03-15 2003-01-14 日本電気株式会社 半導体装置
US20020079530A1 (en) * 2000-12-21 2002-06-27 Xiaoju Wu Electronic circuit with electrical hole isolator
JP2003037113A (ja) * 2001-07-23 2003-02-07 Mitsubishi Electric Corp 半導体装置
ITTO20021090A1 (it) * 2002-12-17 2004-06-18 St Microelectronics Srl Transistore bipolare a flusso di corrente laterale con alto rapporto perimetro/area di emettitore.
DE10343681B4 (de) * 2003-09-18 2007-08-09 Atmel Germany Gmbh Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen
ITTO20060525A1 (it) * 2006-07-18 2008-01-19 St Microelectronics Srl Dispositivo bipolare integrato di tipo verticale e relativo procedimento per la sua fabbricazione
US7439608B2 (en) * 2006-09-22 2008-10-21 Intel Corporation Symmetric bipolar junction transistor design for deep sub-micron fabrication processes
JP2013149925A (ja) * 2012-01-23 2013-08-01 Toshiba Corp 半導体装置及びその製造方法
US9543420B2 (en) 2013-07-19 2017-01-10 Nxp Usa, Inc. Protection device and related fabrication methods
TWI567982B (zh) * 2013-09-30 2017-01-21 天鈺科技股份有限公司 三極體
CN104518012B (zh) * 2013-09-30 2017-12-12 天钰科技股份有限公司 三极管
US10224402B2 (en) * 2014-11-13 2019-03-05 Texas Instruments Incorporated Method of improving lateral BJT characteristics in BCD technology
KR102475447B1 (ko) * 2016-04-26 2022-12-08 주식회사 디비하이텍 바이폴라 접합 트랜지스터 및 이의 제조 방법
US20170373174A1 (en) * 2016-06-25 2017-12-28 Texas Instruments Incorporated Radiation enhanced bipolar transistor
CN107946356B (zh) * 2017-03-02 2024-04-09 重庆中科渝芯电子有限公司 一种横向高压功率双极结型晶体管及其制造方法
US11575029B2 (en) * 2021-05-19 2023-02-07 Globalfoundries U.S. Inc. Lateral bipolar junction transistor and method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH441512A (fr) * 1966-08-02 1967-08-15 Centre Electron Horloger Transistor latéral et procédé pour sa fabrication
US3855007A (en) * 1970-11-13 1974-12-17 Signetics Corp Bipolar transistor structure having ion implanted region and method
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
US3894891A (en) * 1973-12-26 1975-07-15 Ibm Method for making a space charge limited transistor having recessed dielectric isolation
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
DE2634618A1 (de) * 1976-07-31 1978-02-02 Licentia Gmbh Mesatransistor mit einem kollektorkoerper
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
DE2946963A1 (de) * 1979-11-21 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Schnelle bipolare transistoren
JPS5723263A (en) * 1980-07-18 1982-02-06 Toshiba Corp Semiconductor device
JPS57133671A (en) * 1981-02-10 1982-08-18 Pioneer Electronic Corp Lateral transistor device
JPS61295661A (ja) * 1985-06-25 1986-12-26 Yokogawa Electric Corp ラテラルｐｎｐトランジスタ
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
JPH02114645A (ja) * 1988-10-25 1990-04-26 Fuji Electric Co Ltd バイポーラトランジスタ
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
JPH03203265A (ja) * 1989-12-28 1991-09-04 Sony Corp 半導体装置

Also Published As

Publication number Publication date
DE69326340D1 (de) 1999-10-14
DE69428407T2 (de) 2002-05-29
EP0646967A1 (de) 1995-04-05
DE69326340T2 (de) 2000-01-13
EP0646967B1 (de) 1999-09-08
US5828124A (en) 1998-10-27
JPH07231000A (ja) 1995-08-29
US5605850A (en) 1997-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee