DE69604149D1 - Bipolartransistor mit Heteroübergang - Google Patents

Bipolartransistor mit Heteroübergang

Info

Publication number
DE69604149D1
DE69604149D1 DE69604149T DE69604149T DE69604149D1 DE 69604149 D1 DE69604149 D1 DE 69604149D1 DE 69604149 T DE69604149 T DE 69604149T DE 69604149 T DE69604149 T DE 69604149T DE 69604149 D1 DE69604149 D1 DE 69604149D1
Authority
DE
Germany
Prior art keywords
heterojunction
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604149T
Other languages
English (en)
Other versions
DE69604149T2 (de
Inventor
Yutaka Uneme
Kaoru Kadoiwa
Norio Hayafuji
Teruyuki Shimamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69604149D1 publication Critical patent/DE69604149D1/de
Publication of DE69604149T2 publication Critical patent/DE69604149T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69604149T 1995-12-08 1996-11-21 Bipolartransistor mit Heteroübergang Expired - Fee Related DE69604149T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7320356A JPH09162194A (ja) 1995-12-08 1995-12-08 ヘテロ接合バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE69604149D1 true DE69604149D1 (de) 1999-10-14
DE69604149T2 DE69604149T2 (de) 2000-04-27

Family

ID=18120570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604149T Expired - Fee Related DE69604149T2 (de) 1995-12-08 1996-11-21 Bipolartransistor mit Heteroübergang

Country Status (5)

Country Link
EP (1) EP0778622B1 (de)
JP (1) JPH09162194A (de)
KR (1) KR970054488A (de)
CN (1) CN1158008A (de)
DE (1) DE69604149T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19834491A1 (de) * 1998-07-31 2000-02-03 Daimler Chrysler Ag Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
GB2341974A (en) * 1998-09-22 2000-03-29 Secr Defence Semiconductor device incorporating a superlattice structure
KR100504190B1 (ko) * 1998-09-25 2005-10-26 매그나칩 반도체 유한회사 헤테로 바이폴라 트랜지스터의 브릿지 형성방법
US6600179B2 (en) * 2001-11-01 2003-07-29 M/A-Com, Inc. Power amplifier with base and collector straps
US6768140B1 (en) * 2002-04-03 2004-07-27 Skyworks Solutions, Inc. Structure and method in an HBT for an emitter ballast resistor with improved characteristics
DE102005021450B4 (de) * 2005-05-10 2009-04-23 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung
WO2012060123A1 (ja) * 2010-11-02 2012-05-10 三菱電機株式会社 電動式パワーステアリング用パワーモジュールおよびこれを用いた電動式パワーステアリング駆動制御装置
JP5660115B2 (ja) 2012-12-18 2015-01-28 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ、これを用いた電力増幅器、及びヘテロ接合バイポーラトランジスタの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
JP2734875B2 (ja) * 1992-04-28 1998-04-02 松下電器産業株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
JP2958213B2 (ja) * 1993-06-08 1999-10-06 シャープ株式会社 ヘテロ接合バイポーラトランジスタ

Also Published As

Publication number Publication date
EP0778622B1 (de) 1999-09-08
JPH09162194A (ja) 1997-06-20
KR970054488A (ko) 1997-07-31
EP0778622A2 (de) 1997-06-11
DE69604149T2 (de) 2000-04-27
EP0778622A3 (de) 1997-11-26
CN1158008A (zh) 1997-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee