DE69530881D1 - Halbleiteranordnung mit einem lateralen Bipolartransistor - Google Patents

Halbleiteranordnung mit einem lateralen Bipolartransistor

Info

Publication number
DE69530881D1
DE69530881D1 DE69530881T DE69530881T DE69530881D1 DE 69530881 D1 DE69530881 D1 DE 69530881D1 DE 69530881 T DE69530881 T DE 69530881T DE 69530881 T DE69530881 T DE 69530881T DE 69530881 D1 DE69530881 D1 DE 69530881D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
semiconductor arrangement
lateral bipolar
lateral
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69530881T
Other languages
English (en)
Inventor
Hidetoshi Arakawa
Yoshitaka Sugawara
Masamitsu Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4826294A external-priority patent/JPH07263455A/ja
Priority claimed from JP7378094A external-priority patent/JPH07263456A/ja
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69530881D1 publication Critical patent/DE69530881D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69530881T 1994-03-18 1995-03-13 Halbleiteranordnung mit einem lateralen Bipolartransistor Expired - Lifetime DE69530881D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4826294A JPH07263455A (ja) 1994-03-18 1994-03-18 半導体装置
JP7378094A JPH07263456A (ja) 1994-03-22 1994-03-22 半導体装置

Publications (1)

Publication Number Publication Date
DE69530881D1 true DE69530881D1 (de) 2003-07-03

Family

ID=26388498

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69530881T Expired - Lifetime DE69530881D1 (de) 1994-03-18 1995-03-13 Halbleiteranordnung mit einem lateralen Bipolartransistor

Country Status (4)

Country Link
US (1) US5608236A (de)
EP (1) EP0673072B1 (de)
KR (1) KR950034825A (de)
DE (1) DE69530881D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945726A (en) * 1996-12-16 1999-08-31 Micron Technology, Inc. Lateral bipolar transistor
DE19844531B4 (de) * 1998-09-29 2017-12-14 Prema Semiconductor Gmbh Verfahren zur Herstellung von Transistoren
US6563193B1 (en) * 1999-09-28 2003-05-13 Kabushiki Kaisha Toshiba Semiconductor device
JP5052091B2 (ja) * 2006-10-20 2012-10-17 三菱電機株式会社 半導体装置
CN100529773C (zh) * 2006-11-10 2009-08-19 群康科技(深圳)有限公司 集成电路系统压合阻抗检测方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631311A (en) * 1968-03-26 1971-12-28 Telefunken Patent Semiconductor circuit arrangement with integrated base leakage resistance
GB1428742A (en) * 1973-06-02 1976-03-17 Ferranti Ltd Semiconductor devices
US4231056A (en) * 1978-10-20 1980-10-28 Harris Corporation Moat resistor ram cell
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
JPS59127865A (ja) * 1983-01-12 1984-07-23 Hitachi Ltd 半導体装置
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法
JPH01112764A (ja) * 1987-10-27 1989-05-01 Nec Corp 半導体装置
IT1230895B (it) * 1989-06-22 1991-11-08 Sgs Thomson Microelectronics Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
JP2507632B2 (ja) * 1989-10-18 1996-06-12 株式会社日立製作所 半導体装置
US5293051A (en) * 1992-02-14 1994-03-08 Sharp Kabushiki Kaisha Photoswitching device including a MOSFET for detecting zero voltage crossing

Also Published As

Publication number Publication date
EP0673072B1 (de) 2003-05-28
EP0673072A2 (de) 1995-09-20
EP0673072A3 (de) 1995-11-08
US5608236A (en) 1997-03-04
KR950034825A (ko) 1995-12-28

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Legal Events

Date Code Title Description
8332 No legal effect for de