IT1230895B - Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta. - Google Patents

Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Info

Publication number
IT1230895B
IT1230895B IT8920950A IT2095089A IT1230895B IT 1230895 B IT1230895 B IT 1230895B IT 8920950 A IT8920950 A IT 8920950A IT 2095089 A IT2095089 A IT 2095089A IT 1230895 B IT1230895 B IT 1230895B
Authority
IT
Italy
Prior art keywords
optimization
power transistor
direct secondary
secondary breaking
breaking phenomena
Prior art date
Application number
IT8920950A
Other languages
English (en)
Other versions
IT8920950A0 (it
Inventor
Edoardo Botti
Aldo Torazzina
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8920950A priority Critical patent/IT1230895B/it
Publication of IT8920950A0 publication Critical patent/IT8920950A0/it
Priority to EP19900111636 priority patent/EP0404095A3/en
Priority to US07/540,553 priority patent/US5073811A/en
Priority to JP2163937A priority patent/JPH03148833A/ja
Application granted granted Critical
Publication of IT1230895B publication Critical patent/IT1230895B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
IT8920950A 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta. IT1230895B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
EP19900111636 EP0404095A3 (en) 1989-06-22 1990-06-20 Integratable power transistor with optimization of direct secondary breakdown phenomena
US07/540,553 US5073811A (en) 1989-06-22 1990-06-20 Integratable power transistor with optimization of direct secondary breakdown phenomena
JP2163937A JPH03148833A (ja) 1989-06-22 1990-06-21 集積可能なパワートランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Publications (2)

Publication Number Publication Date
IT8920950A0 IT8920950A0 (it) 1989-06-22
IT1230895B true IT1230895B (it) 1991-11-08

Family

ID=11174507

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Country Status (4)

Country Link
US (1) US5073811A (it)
EP (1) EP0404095A3 (it)
JP (1) JPH03148833A (it)
IT (1) IT1230895B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
EP0673072B1 (en) * 1994-03-18 2003-05-28 Hitachi, Ltd. Semiconductor device comprising a lateral bipolar transistor
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures
JP5464159B2 (ja) * 2011-03-08 2014-04-09 三菱電機株式会社 パワーモジュール
US10477883B2 (en) 2015-08-25 2019-11-19 Cornelius, Inc. Gas injection assemblies for batch beverages having spargers
US10785996B2 (en) 2015-08-25 2020-09-29 Cornelius, Inc. Apparatuses, systems, and methods for inline injection of gases into liquids
US11040314B2 (en) 2019-01-08 2021-06-22 Marmon Foodservice Technologies, Inc. Apparatuses, systems, and methods for injecting gasses into beverages

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
DE2408540C2 (de) * 1974-02-22 1982-04-08 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement aus einer Vielzahl mindestens annähernd gleicher Schaltungselemente und Verfahren zum Erkennen und Abtrennen defekter Schaltungselemente
JPS5654064A (en) * 1979-10-08 1981-05-13 Mitsubishi Electric Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法
JPH069208B2 (ja) * 1987-02-27 1994-02-02 ロ−ム株式会社 半導体装置
JPS63260076A (ja) * 1987-04-16 1988-10-27 Nec Corp 半導体装置
JPS63275175A (ja) * 1987-05-07 1988-11-11 Fuji Electric Co Ltd パワ−トランジスタ
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
DE3802794A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Leistungstransistor
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver

Also Published As

Publication number Publication date
IT8920950A0 (it) 1989-06-22
US5073811A (en) 1991-12-17
JPH03148833A (ja) 1991-06-25
EP0404095A2 (en) 1990-12-27
EP0404095A3 (en) 1991-03-20

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628