IT1230895B - Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta. - Google Patents

Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Info

Publication number
IT1230895B
IT1230895B IT8920950A IT2095089A IT1230895B IT 1230895 B IT1230895 B IT 1230895B IT 8920950 A IT8920950 A IT 8920950A IT 2095089 A IT2095089 A IT 2095089A IT 1230895 B IT1230895 B IT 1230895B
Authority
IT
Italy
Prior art keywords
optimization
power transistor
direct secondary
secondary breaking
breaking phenomena
Prior art date
Application number
IT8920950A
Other languages
English (en)
Other versions
IT8920950A0 (it
Inventor
Edoardo Botti
Aldo Torazzina
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8920950A priority Critical patent/IT1230895B/it
Publication of IT8920950A0 publication Critical patent/IT8920950A0/it
Priority to US07/540,553 priority patent/US5073811A/en
Priority to EP19900111636 priority patent/EP0404095A3/en
Priority to JP2163937A priority patent/JPH03148833A/ja
Application granted granted Critical
Publication of IT1230895B publication Critical patent/IT1230895B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7302Bipolar junction transistors structurally associated with other devices
    • H01L29/7304Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT8920950A 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta. IT1230895B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
US07/540,553 US5073811A (en) 1989-06-22 1990-06-20 Integratable power transistor with optimization of direct secondary breakdown phenomena
EP19900111636 EP0404095A3 (en) 1989-06-22 1990-06-20 Integratable power transistor with optimization of direct secondary breakdown phenomena
JP2163937A JPH03148833A (ja) 1989-06-22 1990-06-21 集積可能なパワートランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Publications (2)

Publication Number Publication Date
IT8920950A0 IT8920950A0 (it) 1989-06-22
IT1230895B true IT1230895B (it) 1991-11-08

Family

ID=11174507

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920950A IT1230895B (it) 1989-06-22 1989-06-22 Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.

Country Status (4)

Country Link
US (1) US5073811A (it)
EP (1) EP0404095A3 (it)
JP (1) JPH03148833A (it)
IT (1) IT1230895B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
DE69530881D1 (de) * 1994-03-18 2003-07-03 Hitachi Ltd Halbleiteranordnung mit einem lateralen Bipolartransistor
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures
JP5464159B2 (ja) * 2011-03-08 2014-04-09 三菱電機株式会社 パワーモジュール
US10477883B2 (en) 2015-08-25 2019-11-19 Cornelius, Inc. Gas injection assemblies for batch beverages having spargers
US10785996B2 (en) 2015-08-25 2020-09-29 Cornelius, Inc. Apparatuses, systems, and methods for inline injection of gases into liquids
US11040314B2 (en) 2019-01-08 2021-06-22 Marmon Foodservice Technologies, Inc. Apparatuses, systems, and methods for injecting gasses into beverages

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990092A (en) * 1974-01-11 1976-11-02 Hitachi, Ltd. Resistance element for semiconductor integrated circuit
DE2408540C2 (de) * 1974-02-22 1982-04-08 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement aus einer Vielzahl mindestens annähernd gleicher Schaltungselemente und Verfahren zum Erkennen und Abtrennen defekter Schaltungselemente
JPS55165672A (en) * 1979-06-11 1980-12-24 Fujitsu Ltd Semiconductor device
JPS5654064A (en) * 1979-10-08 1981-05-13 Mitsubishi Electric Corp Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
JPS61184874A (ja) * 1985-02-12 1986-08-18 Matsushita Electronics Corp 半導体装置
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法
JPH069208B2 (ja) * 1987-02-27 1994-02-02 ロ−ム株式会社 半導体装置
JPS63260076A (ja) * 1987-04-16 1988-10-27 Nec Corp 半導体装置
JPS63275175A (ja) * 1987-05-07 1988-11-11 Fuji Electric Co Ltd パワ−トランジスタ
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
DE3802794A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Leistungstransistor
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver

Also Published As

Publication number Publication date
IT8920950A0 (it) 1989-06-22
EP0404095A2 (en) 1990-12-27
JPH03148833A (ja) 1991-06-25
US5073811A (en) 1991-12-17
EP0404095A3 (en) 1991-03-20

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628