DE3871908D1 - Lateraler hochspannungstransistor. - Google Patents

Lateraler hochspannungstransistor.

Info

Publication number
DE3871908D1
DE3871908D1 DE8888202470T DE3871908T DE3871908D1 DE 3871908 D1 DE3871908 D1 DE 3871908D1 DE 8888202470 T DE8888202470 T DE 8888202470T DE 3871908 T DE3871908 T DE 3871908T DE 3871908 D1 DE3871908 D1 DE 3871908D1
Authority
DE
Germany
Prior art keywords
high voltage
voltage transistor
lateral high
lateral
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888202470T
Other languages
English (en)
Other versions
DE3871908T2 (de
Inventor
Adrianus Willem Ludikhuize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3871908D1 publication Critical patent/DE3871908D1/de
Publication of DE3871908T2 publication Critical patent/DE3871908T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
DE8888202470T 1987-11-09 1988-11-04 Lateraler hochspannungstransistor. Expired - Fee Related DE3871908T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8702671A NL8702671A (nl) 1987-11-09 1987-11-09 Laterale hoogspanningstransistor.

Publications (2)

Publication Number Publication Date
DE3871908D1 true DE3871908D1 (de) 1992-07-16
DE3871908T2 DE3871908T2 (de) 1993-01-14

Family

ID=19850886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888202470T Expired - Fee Related DE3871908T2 (de) 1987-11-09 1988-11-04 Lateraler hochspannungstransistor.

Country Status (6)

Country Link
US (1) US4987469A (de)
EP (1) EP0316988B1 (de)
JP (1) JPH01160053A (de)
KR (1) KR0138917B1 (de)
DE (1) DE3871908T2 (de)
NL (1) NL8702671A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
CA2114356A1 (en) * 1993-02-23 1994-08-24 Kimberly A. Gaul Wallpaper remover
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
JP3768079B2 (ja) * 2000-07-25 2006-04-19 シャープ株式会社 トランジスタ
CN104518008B (zh) * 2013-09-29 2017-12-22 北大方正集团有限公司 一种结型场效应管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936863A (en) * 1974-09-09 1976-02-03 Rca Corporation Integrated power transistor with ballasting resistance and breakdown protection
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
JPH0654777B2 (ja) * 1985-02-12 1994-07-20 キヤノン株式会社 ラテラルトランジスタを有する回路

Also Published As

Publication number Publication date
DE3871908T2 (de) 1993-01-14
EP0316988A1 (de) 1989-05-24
JPH01160053A (ja) 1989-06-22
KR0138917B1 (ko) 1998-06-01
JPH055373B2 (de) 1993-01-22
EP0316988B1 (de) 1992-06-10
NL8702671A (nl) 1989-06-01
US4987469A (en) 1991-01-22
KR890008993A (ko) 1989-07-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee