DE3684400D1 - Verteilte feldeffekttransistorstruktur. - Google Patents
Verteilte feldeffekttransistorstruktur.Info
- Publication number
- DE3684400D1 DE3684400D1 DE8686402158T DE3684400T DE3684400D1 DE 3684400 D1 DE3684400 D1 DE 3684400D1 DE 8686402158 T DE8686402158 T DE 8686402158T DE 3684400 T DE3684400 T DE 3684400T DE 3684400 D1 DE3684400 D1 DE 3684400D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor structure
- distributed field
- distributed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/784,810 US4636825A (en) | 1985-10-04 | 1985-10-04 | Distributed field effect transistor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3684400D1 true DE3684400D1 (de) | 1992-04-23 |
Family
ID=25133598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686402158T Expired - Lifetime DE3684400D1 (de) | 1985-10-04 | 1986-10-02 | Verteilte feldeffekttransistorstruktur. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4636825A (de) |
EP (1) | EP0218529B1 (de) |
JP (1) | JPS6286763A (de) |
CA (1) | CA1243130A (de) |
DE (1) | DE3684400D1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07112064B2 (ja) * | 1986-02-10 | 1995-11-29 | 株式会社東芝 | 絶縁ゲート電界効果型トランジスタ |
JP2633562B2 (ja) * | 1987-05-27 | 1997-07-23 | 株式会社東芝 | 半導体集積回路 |
US5200637A (en) * | 1988-12-15 | 1993-04-06 | Kabushiki Kaisha Toshiba | MOS transistor and differential amplifier circuit with low offset |
US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
JPH07112067B2 (ja) * | 1990-01-24 | 1995-11-29 | 株式会社東芝 | 半導体装置 |
SE500523C2 (sv) * | 1992-10-09 | 1994-07-11 | Elsa Elektroniska Systems And | Halvledarkomponent med minst en första och en andra komponentelektrod innefattande ett flertal på en halvledarbricka integrerade halvledarelement, som vart och ett innefattar minst en första och en andra elementelektrod på samma sida av halvledarbrickan, varid de första elementelektroderna är förbundna med den första komponentelektroden och de andra elementelektroderna är förbundna med den andra komponentelektroden. |
US5408141A (en) * | 1993-01-04 | 1995-04-18 | Texas Instruments Incorporated | Sensed current driving device |
US5412239A (en) * | 1993-05-14 | 1995-05-02 | Siliconix Incorporated | Contact geometry for improved lateral MOSFET |
US5355008A (en) * | 1993-11-19 | 1994-10-11 | Micrel, Inc. | Diamond shaped gate mesh for cellular MOS transistor array |
US5535086A (en) * | 1994-09-22 | 1996-07-09 | National Semiconductor Corp. | ESD protection circuit and method for BICMOS devices |
JP3355817B2 (ja) * | 1994-10-20 | 2002-12-09 | 株式会社デンソー | 半導体装置 |
EP0766309A3 (de) * | 1995-08-28 | 1998-04-29 | Texas Instruments Incorporated | Feldeffekttransistor mit mehrschichtiger Metallisierung und integrierter Schaltung dafür |
US6084266A (en) * | 1998-03-02 | 2000-07-04 | Vanguard International Semiconductor Corporation | Layout of semiconductor devices to increase the packing density of a wafer |
JP3412599B2 (ja) | 2000-04-19 | 2003-06-03 | 株式会社デンソー | 半導体装置 |
US6732334B2 (en) * | 2001-04-02 | 2004-05-04 | Matsushita Electric Industrial Co., Ltd. | Analog MOS semiconductor device, manufacturing method therefor, manufacturing program therefor, and program device therefor |
US6624484B2 (en) * | 2001-07-31 | 2003-09-23 | Nokia Corporation | IGFET and tuning circuit |
US6713823B1 (en) * | 2002-03-08 | 2004-03-30 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits |
JP4232584B2 (ja) * | 2002-10-15 | 2009-03-04 | 株式会社デンソー | 半導体装置 |
JP4396200B2 (ja) * | 2002-10-30 | 2010-01-13 | 株式会社デンソー | 半導体装置 |
US6975133B1 (en) * | 2004-05-27 | 2005-12-13 | International Business Machines Corporation | Logic circuits having linear and cellular gate transistors |
US7193292B2 (en) * | 2004-12-02 | 2007-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Fuse structure with charge protection circuit |
TWI261891B (en) * | 2004-12-24 | 2006-09-11 | Richtek Technology Corp | Power metal oxide semiconductor transistor layout with lower output resistance and high current limit |
US7355217B1 (en) * | 2005-11-22 | 2008-04-08 | National Semiconductor Corporation | MOS transistor structure with easy access to all nodes |
US20090072314A1 (en) * | 2007-09-19 | 2009-03-19 | Texas Instruments Incorporated | Depletion Mode Field Effect Transistor for ESD Protection |
US20080191348A1 (en) * | 2007-02-14 | 2008-08-14 | Infineon Technologies Ag | System for distributing electrical power for a chip |
US8169081B1 (en) | 2007-12-27 | 2012-05-01 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits using under bump metallization |
US20100059795A1 (en) * | 2008-09-08 | 2010-03-11 | Firas Azrai | Vertical current transport in a power converter circuit |
US9029866B2 (en) * | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
KR20120041237A (ko) | 2009-08-04 | 2012-04-30 | 갠 시스템즈 인크. | 아일랜드 매트릭스 갈륨 나이트라이드 마이크로파 및 전력 트랜지스터 |
US8791508B2 (en) * | 2010-04-13 | 2014-07-29 | Gan Systems Inc. | High density gallium nitride devices using island topology |
US8896034B1 (en) | 2010-08-11 | 2014-11-25 | Sarda Technologies, Inc. | Radio frequency and microwave devices and methods of use |
US9236378B2 (en) | 2010-08-11 | 2016-01-12 | Sarda Technologies, Inc. | Integrated switch devices |
US8519916B2 (en) * | 2010-08-11 | 2013-08-27 | Sarda Technologies, Inc. | Low interconnect resistance integrated switches |
US8836029B2 (en) * | 2012-02-29 | 2014-09-16 | Smsc Holdings S.A.R.L. | Transistor with minimized resistance |
US9484305B2 (en) * | 2014-07-21 | 2016-11-01 | Skyworks Solutions, Inc. | Offset contacts for reduced off capacitance in transistor switches |
GB201418752D0 (en) | 2014-10-22 | 2014-12-03 | Rolls Royce Plc | Lateral field effect transistor device |
KR102179563B1 (ko) * | 2014-10-28 | 2020-11-18 | 삼성디스플레이 주식회사 | 표시장치 |
US9972649B2 (en) * | 2015-10-21 | 2018-05-15 | Massachusetts Institute Of Technology | Nanowire FET imaging system and related techniques |
US9774322B1 (en) | 2016-06-22 | 2017-09-26 | Sarda Technologies, Inc. | Gate driver for depletion-mode transistors |
US11768262B2 (en) | 2019-03-14 | 2023-09-26 | Massachusetts Institute Of Technology | Interface responsive to two or more sensor modalities |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
US4287571A (en) * | 1979-09-11 | 1981-09-01 | International Business Machines Corporation | High density transistor arrays |
JPS5669865A (en) * | 1979-11-12 | 1981-06-11 | Mitsubishi Electric Corp | Field-effect type transistor |
US4359817A (en) * | 1981-05-28 | 1982-11-23 | General Motors Corporation | Method for making late programmable read-only memory devices |
FR2537780A1 (fr) * | 1982-12-08 | 1984-06-15 | Radiotechnique Compelec | Dispositif mos fet de puissance a structure plane multicellulaire |
US4566022A (en) * | 1983-01-27 | 1986-01-21 | International Business Machines Corporation | Flexible/compressed array macro design |
JPS6012742A (ja) * | 1983-07-01 | 1985-01-23 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-10-04 US US06/784,810 patent/US4636825A/en not_active Expired - Lifetime
-
1986
- 1986-10-02 DE DE8686402158T patent/DE3684400D1/de not_active Expired - Lifetime
- 1986-10-02 EP EP86402158A patent/EP0218529B1/de not_active Expired - Lifetime
- 1986-10-03 CA CA000519693A patent/CA1243130A/en not_active Expired
- 1986-10-04 JP JP61235510A patent/JPS6286763A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS6286763A (ja) | 1987-04-21 |
EP0218529A3 (en) | 1987-12-23 |
EP0218529A2 (de) | 1987-04-15 |
CA1243130A (en) | 1988-10-11 |
EP0218529B1 (de) | 1992-03-18 |
US4636825A (en) | 1987-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |