DE3686906D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3686906D1
DE3686906D1 DE8686106914T DE3686906T DE3686906D1 DE 3686906 D1 DE3686906 D1 DE 3686906D1 DE 8686106914 T DE8686106914 T DE 8686106914T DE 3686906 T DE3686906 T DE 3686906T DE 3686906 D1 DE3686906 D1 DE 3686906D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686106914T
Other languages
English (en)
Other versions
DE3686906T2 (de
Inventor
Yasunari Umemoto
Nobuo Kotera
Kiichi Ueyanagi
Norikazu Hashimoto
Nobutoshi Matsunaga
Yasuo Wada
Shoji Shukuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60108121A external-priority patent/JPH0799752B2/ja
Priority claimed from JP61056811A external-priority patent/JPS62214672A/ja
Priority claimed from JP61056810A external-priority patent/JP2544344B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3686906D1 publication Critical patent/DE3686906D1/de
Publication of DE3686906T2 publication Critical patent/DE3686906T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19863686906 1985-05-22 1986-05-21 Feldeffekttransistor. Expired - Fee Related DE3686906T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60108121A JPH0799752B2 (ja) 1985-05-22 1985-05-22 電界効果トランジスタ
JP61056811A JPS62214672A (ja) 1986-03-17 1986-03-17 電界効果トランジスタ
JP61056810A JP2544344B2 (ja) 1986-03-17 1986-03-17 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE3686906D1 true DE3686906D1 (de) 1992-11-12
DE3686906T2 DE3686906T2 (de) 1993-03-04

Family

ID=27296041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863686906 Expired - Fee Related DE3686906T2 (de) 1985-05-22 1986-05-21 Feldeffekttransistor.

Country Status (2)

Country Link
EP (1) EP0203516B1 (de)
DE (1) DE3686906T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923985A (en) * 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
DE3789894T2 (de) * 1987-01-05 1994-09-08 Seiko Instr Inc MOS-Feldeffekttransistor und dessen Herstellungsmethode.
JPS63302535A (ja) * 1987-06-03 1988-12-09 Mitsubishi Electric Corp ガリウム砒素集積回路
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148465A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPS59147464A (ja) * 1983-02-10 1984-08-23 Nec Corp 電界効果トランジスタ
EP0181091B1 (de) * 1984-11-02 1990-06-13 Kabushiki Kaisha Toshiba Feldeffekttransistor mit einem Schottky-Gate und Herstellungsverfahren dafür

Also Published As

Publication number Publication date
DE3686906T2 (de) 1993-03-04
EP0203516A2 (de) 1986-12-03
EP0203516B1 (de) 1992-10-07
EP0203516A3 (en) 1988-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee