DE3877548D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3877548D1
DE3877548D1 DE8888312218T DE3877548T DE3877548D1 DE 3877548 D1 DE3877548 D1 DE 3877548D1 DE 8888312218 T DE8888312218 T DE 8888312218T DE 3877548 T DE3877548 T DE 3877548T DE 3877548 D1 DE3877548 D1 DE 3877548D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888312218T
Other languages
English (en)
Other versions
DE3877548T2 (de
Inventor
Toshiyuki Yoshimura
Yasuo Igura
Eiji Takeda
Hideyuki Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3877548D1 publication Critical patent/DE3877548D1/de
Publication of DE3877548T2 publication Critical patent/DE3877548T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8888312218T 1987-12-28 1988-12-22 Feldeffekttransistor. Expired - Fee Related DE3877548T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62329875A JP2550375B2 (ja) 1987-12-28 1987-12-28 半導体装置

Publications (2)

Publication Number Publication Date
DE3877548D1 true DE3877548D1 (de) 1993-02-25
DE3877548T2 DE3877548T2 (de) 1993-05-13

Family

ID=18226220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888312218T Expired - Fee Related DE3877548T2 (de) 1987-12-28 1988-12-22 Feldeffekttransistor.

Country Status (4)

Country Link
EP (1) EP0323158B1 (de)
JP (1) JP2550375B2 (de)
KR (1) KR910009036B1 (de)
DE (1) DE3877548T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0434234B1 (de) * 1989-12-22 1995-05-24 AT&T Corp. MOS-Bauteile mit einer verbesserten elektrischen Anpassung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550330A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Semiconductor interferometer
JPS61159769A (ja) * 1985-01-07 1986-07-19 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS62254469A (ja) * 1986-04-22 1987-11-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 量子ウエル装置

Also Published As

Publication number Publication date
DE3877548T2 (de) 1993-05-13
KR910009036B1 (ko) 1991-10-28
EP0323158B1 (de) 1993-01-13
EP0323158A2 (de) 1989-07-05
JP2550375B2 (ja) 1996-11-06
KR890011111A (ko) 1989-08-12
JPH01173656A (ja) 1989-07-10
EP0323158A3 (en) 1989-08-23

Similar Documents

Publication Publication Date Title
DE3788525D1 (de) Feldeffekttransistoranordnungen.
DE3684400D1 (de) Verteilte feldeffekttransistorstruktur.
DE3679971D1 (de) Modulationsdotierter feldeffekttransistor.
DE3768854D1 (de) Lateraltransistor.
DE3854677D1 (de) Komplementäre Feldeffekttransistorstruktur.
DE3689433D1 (de) Feldeffekttransistor.
DE3850598D1 (de) Substituierte Di-t-butylphenole.
DE3751098D1 (de) Feldeffekttransistor.
DE3887716D1 (de) Transistor.
NO884364L (no) Hoeyfrekvens-varmeinnretning.
NO881411D0 (no) Substituerte pyrroler.
DE69109238D1 (de) Feldeffekttransistor.
DE3866935D1 (de) Vertikaler ballistischer transistor.
DE3886212D1 (de) Hydrotherapiegerät.
DE3677141D1 (de) Feldeffekttransistoranordnung.
DE3583064D1 (de) Supraleitender transistor.
DE3850253D1 (de) Befestigungsvorrichtung.
DE3888745D1 (de) Eingangs-Ausgangs-Einrichtung.
NO882194D0 (no) Fly-radaranordning.
DE3673509D1 (de) Feldeffekttransistorverstaerkerschaltungen.
DE3688318D1 (de) Feldeffekttransistor.
DE3880443D1 (de) Feldeffekttransistor.
DE3687425D1 (de) Transistoranordnung.
DE3851991D1 (de) Bipolartransistoren.
DE68913868D1 (de) Supraleitender Transistor.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee