IT1232930B - Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene - Google Patents

Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene

Info

Publication number
IT1232930B
IT1232930B IT8722474A IT2247487A IT1232930B IT 1232930 B IT1232930 B IT 1232930B IT 8722474 A IT8722474 A IT 8722474A IT 2247487 A IT2247487 A IT 2247487A IT 1232930 B IT1232930 B IT 1232930B
Authority
IT
Italy
Prior art keywords
voltage
active
component
integrated structure
components included
Prior art date
Application number
IT8722474A
Other languages
English (en)
Other versions
IT8722474A0 (it
Inventor
Sergio Palara
Mario Paparo
Roberto Pellicano
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8722474A priority Critical patent/IT1232930B/it
Publication of IT8722474A0 publication Critical patent/IT8722474A0/it
Priority to EP88202271A priority patent/EP0314226A3/en
Priority to US07/259,254 priority patent/US4947231A/en
Priority to JP63269642A priority patent/JP2686500B2/ja
Application granted granted Critical
Publication of IT1232930B publication Critical patent/IT1232930B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT8722474A 1987-10-30 1987-10-30 Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene IT1232930B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8722474A IT1232930B (it) 1987-10-30 1987-10-30 Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
EP88202271A EP0314226A3 (en) 1987-10-30 1988-10-11 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it
US07/259,254 US4947231A (en) 1987-10-30 1988-10-18 Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it
JP63269642A JP2686500B2 (ja) 1987-10-30 1988-10-27 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722474A IT1232930B (it) 1987-10-30 1987-10-30 Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene

Publications (2)

Publication Number Publication Date
IT8722474A0 IT8722474A0 (it) 1987-10-30
IT1232930B true IT1232930B (it) 1992-03-10

Family

ID=11196764

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8722474A IT1232930B (it) 1987-10-30 1987-10-30 Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene

Country Status (4)

Country Link
US (1) US4947231A (it)
EP (1) EP0314226A3 (it)
JP (1) JP2686500B2 (it)
IT (1) IT1232930B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
IT1230895B (it) * 1989-06-22 1991-11-08 Sgs Thomson Microelectronics Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
IT1236667B (it) * 1989-11-07 1993-03-25 Sgs Thomson Microelectronics Dispositivo di protezione contro la rottura di una regione diffusa di tipo n+ inserita in una struttura integrata di potenza a semiconduttore di tipo verticale
US5311054A (en) * 1991-03-25 1994-05-10 Harris Corporation Graded collector for inductive loads
DE59300087D1 (de) * 1992-07-16 1995-03-30 Landis & Gry Tech Innovat Ag Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker.
DE69327320T2 (de) * 1993-09-30 2000-05-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
DE10037452B4 (de) * 2000-08-01 2006-07-27 Infineon Technologies Ag Nachführschaltung
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
FR2543364B1 (fr) * 1983-03-25 1986-09-05 Trt Telecom Radio Electr Procede de realisation de transistors par integration monolithique en technologie bipolaire et circuits integres ainsi obtenus
JPS59191348A (ja) * 1983-04-14 1984-10-30 Sanyo Electric Co Ltd 半導体集積回路
JPS6079736A (ja) * 1983-10-06 1985-05-07 Sanyo Electric Co Ltd 半導体集積回路
US4646124A (en) * 1984-07-30 1987-02-24 Sprague Electric Company Level shifting BIMOS integrated circuit
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
JPS61234075A (ja) * 1985-04-10 1986-10-18 Sanyo Electric Co Ltd コイル負荷駆動用半導体集積回路
US4684970A (en) * 1985-07-29 1987-08-04 Rca Corporation High current lateral transistor structure
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
IT1204244B (it) * 1986-03-21 1989-03-01 Sgs Microelettronica Spa Struttura npn equivalente con tensione di rottura maggiorata rispetto alla tensione di rottura intrinseca dell'npn

Also Published As

Publication number Publication date
IT8722474A0 (it) 1987-10-30
US4947231A (en) 1990-08-07
EP0314226A2 (en) 1989-05-03
JP2686500B2 (ja) 1997-12-08
JPH01146352A (ja) 1989-06-08
EP0314226A3 (en) 1989-11-15

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030