DE69420492D1 - Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten - Google Patents

Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten

Info

Publication number
DE69420492D1
DE69420492D1 DE69420492T DE69420492T DE69420492D1 DE 69420492 D1 DE69420492 D1 DE 69420492D1 DE 69420492 T DE69420492 T DE 69420492T DE 69420492 T DE69420492 T DE 69420492T DE 69420492 D1 DE69420492 D1 DE 69420492D1
Authority
DE
Germany
Prior art keywords
circuit component
semiconductor circuit
parasitic capacitances
reduced influence
influence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69420492T
Other languages
English (en)
Other versions
DE69420492T2 (de
Inventor
Tetsuya Narahara
Yasushi Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69420492D1 publication Critical patent/DE69420492D1/de
Publication of DE69420492T2 publication Critical patent/DE69420492T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
DE69420492T 1993-06-25 1994-06-24 Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten Expired - Fee Related DE69420492T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15404593 1993-06-25
JP15405693 1993-06-25

Publications (2)

Publication Number Publication Date
DE69420492D1 true DE69420492D1 (de) 1999-10-14
DE69420492T2 DE69420492T2 (de) 2000-05-04

Family

ID=26482471

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69433536T Expired - Lifetime DE69433536D1 (de) 1993-06-25 1994-06-24 Halbleiterschaltkreisbauelement mit reduziertem Einfluss einer parasitären Kapazität
DE69420492T Expired - Fee Related DE69420492T2 (de) 1993-06-25 1994-06-24 Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69433536T Expired - Lifetime DE69433536D1 (de) 1993-06-25 1994-06-24 Halbleiterschaltkreisbauelement mit reduziertem Einfluss einer parasitären Kapazität

Country Status (4)

Country Link
US (2) US5479044A (de)
EP (2) EP0638932B1 (de)
KR (1) KR0153390B1 (de)
DE (2) DE69433536D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696403A (en) * 1993-10-25 1997-12-09 Lsi Logic Corporation System having input-output drive reduction
JP3246541B2 (ja) * 1994-06-06 2002-01-15 横河電機株式会社 半導体装置
EP0704889A3 (de) * 1994-09-29 1998-10-21 Siemens Aktiengesellschaft Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung
JP2833522B2 (ja) * 1995-04-27 1998-12-09 日本電気株式会社 半導体装置
JPH08306773A (ja) * 1995-04-28 1996-11-22 Sharp Corp 半導体装置
JP2798020B2 (ja) * 1995-10-25 1998-09-17 日本電気株式会社 半導体集積回路
JPH09167827A (ja) * 1995-12-14 1997-06-24 Tokai Rika Co Ltd 半導体装置
US5698998A (en) * 1996-04-12 1997-12-16 Hewlett-Packard Co. Fast, low power, differential sense amplifier
US5880513A (en) * 1996-04-18 1999-03-09 Harris Corporation Asymmetric snubber resistor
US5723358A (en) * 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
US6198123B1 (en) * 1997-08-29 2001-03-06 Cardiac Pacemakers, Inc. Shielded integrated circuit capacitor connected to a lateral transistor
US6020785A (en) * 1998-10-23 2000-02-01 Maxim Integrated Products, Inc. Fixed gain operational amplifiers
US6373118B1 (en) 1999-08-11 2002-04-16 Lewyn Consulting, Inc. High-value integrated circuit resistor
JP3421631B2 (ja) * 2000-03-24 2003-06-30 富士通カンタムデバイス株式会社 半導体集積回路装置およびその製造方法
US6433717B1 (en) 2000-05-31 2002-08-13 Cygnal Integrated Products, Inc. D/A resistor strings with cross coupling switches
US6472942B1 (en) * 2000-08-21 2002-10-29 Em (Us) Design, Inc. Parasitically compensated resistor for integrated circuits
JP3719650B2 (ja) * 2000-12-22 2005-11-24 松下電器産業株式会社 半導体装置
FR2849597B1 (fr) * 2003-01-08 2006-12-08 Oreal Composition cosmetique pour le soin des peaux grasses, contenant un acide gras carboxylique ou l'un de ses derives
US7317356B2 (en) * 2005-03-02 2008-01-08 Alfred E. Mann Foundation For Scientific Research Ultra low-frequency response, DC-blocked low-noise amplifier
JP2010109233A (ja) * 2008-10-31 2010-05-13 Renesas Technology Corp 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1013381A (fr) * 1950-03-01 1952-07-28 Fr Photorex Soc Dispositif d'entraînement du film dans les appareils photographiques
FR2530048B1 (fr) * 1982-07-09 1986-01-31 Efcis Integrateur differentiel bilineaire a capacites commutees s'affranchissant des capacites parasites
JPS59185432A (ja) * 1983-04-05 1984-10-22 Sumitomo Electric Ind Ltd 光受信回路
US4641108A (en) * 1985-10-16 1987-02-03 Raytheon Company Configurable analog integrated circuit
US4636738A (en) * 1986-02-03 1987-01-13 Motorola, Inc. Parasitic compensated switched capacitor integrator
DE3714672A1 (de) * 1987-05-02 1988-11-17 Telefunken Electronic Gmbh Rc-leitung
US4812733A (en) * 1987-10-27 1989-03-14 Richard Tobey Computer element performance enhancer
JP2538037B2 (ja) * 1989-03-17 1996-09-25 松下電器産業株式会社 フィルタ回路
JP2676989B2 (ja) * 1990-07-05 1997-11-17 ヤマハ株式会社 Ｎａｎｄ型マスクｒｏｍ
JPH05143535A (ja) * 1991-10-18 1993-06-11 Toshiba Corp 半導体集積回路
JP3089761B2 (ja) * 1991-11-20 2000-09-18 富士通株式会社 差動増幅回路
JPH06151704A (ja) * 1992-11-11 1994-05-31 Mitsubishi Electric Corp 半導体装置及び配置配線装置

Also Published As

Publication number Publication date
EP0886314A1 (de) 1998-12-23
DE69420492T2 (de) 2000-05-04
US5479044A (en) 1995-12-26
US5479045A (en) 1995-12-26
EP0638932A2 (de) 1995-02-15
KR950002019A (ko) 1995-01-04
EP0638932B1 (de) 1999-09-08
EP0638932A3 (de) 1995-05-03
KR0153390B1 (ko) 1998-10-15
DE69433536D1 (de) 2004-03-11
EP0886314B1 (de) 2004-02-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee