DE69233067D1 - Integrierte Schaltungen - Google Patents

Integrierte Schaltungen

Info

Publication number
DE69233067D1
DE69233067D1 DE69233067T DE69233067T DE69233067D1 DE 69233067 D1 DE69233067 D1 DE 69233067D1 DE 69233067 T DE69233067 T DE 69233067T DE 69233067 T DE69233067 T DE 69233067T DE 69233067 D1 DE69233067 D1 DE 69233067D1
Authority
DE
Germany
Prior art keywords
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69233067T
Other languages
English (en)
Other versions
DE69233067T2 (de
Inventor
Steven D Berger
Marvin Leventhal
James A Liddle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69233067D1 publication Critical patent/DE69233067D1/de
Publication of DE69233067T2 publication Critical patent/DE69233067T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/47—Organic layers, e.g. photoresist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31791—Scattering mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69233067T 1991-12-30 1992-12-10 Integrierte Schaltungen Expired - Lifetime DE69233067T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/814,953 US5260151A (en) 1991-12-30 1991-12-30 Device manufacture involving step-and-scan delineation
US814953 1991-12-30

Publications (2)

Publication Number Publication Date
DE69233067D1 true DE69233067D1 (de) 2003-06-26
DE69233067T2 DE69233067T2 (de) 2004-04-01

Family

ID=25216448

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69233067T Expired - Lifetime DE69233067T2 (de) 1991-12-30 1992-12-10 Integrierte Schaltungen

Country Status (7)

Country Link
US (1) US5260151A (de)
EP (1) EP0550173B1 (de)
JP (1) JP3457346B2 (de)
KR (1) KR100272116B1 (de)
CA (1) CA2083112C (de)
DE (1) DE69233067T2 (de)
TW (1) TW198138B (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
US5674413A (en) * 1993-12-23 1997-10-07 International Business Machines Corporation Scattering reticle for electron beam systems
US5466904A (en) * 1993-12-23 1995-11-14 International Business Machines Corporation Electron beam lithography system
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam
JP3378413B2 (ja) * 1994-09-16 2003-02-17 株式会社東芝 電子線描画装置及び電子線描画方法
JPH08124833A (ja) * 1994-10-26 1996-05-17 Nikon Corp 荷電粒子線転写用マスク
JPH08124834A (ja) * 1994-10-26 1996-05-17 Nikon Corp 荷電粒子線転写装置
US5773837A (en) * 1994-11-22 1998-06-30 Nikon Corporation Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus
US5689117A (en) * 1994-11-22 1997-11-18 Nikon Corporation Apparatus for image transfer with charged particle beam, and deflector and mask used with such apparatus
JPH0974064A (ja) * 1995-06-26 1997-03-18 Nikon Corp 荷電粒子線によるパターン転写方法及び転写装置
JP3940824B2 (ja) * 1995-08-14 2007-07-04 株式会社ニコン 荷電粒子線によるパターン転写方法および転写装置
JP3518097B2 (ja) * 1995-09-29 2004-04-12 株式会社ニコン 荷電粒子線転写装置，パターン分割方法，マスクおよび荷電粒子線転写方法
JP3601630B2 (ja) * 1995-11-01 2004-12-15 株式会社ニコン 荷電粒子線転写方法
JPH09180987A (ja) * 1995-12-26 1997-07-11 Nikon Corp 荷電粒子線転写装置
US5798194A (en) * 1996-05-22 1998-08-25 Nikon Corporation Masks for charged-particle beam microlithography
JPH1050584A (ja) * 1996-08-07 1998-02-20 Nikon Corp マスク保持装置
KR100253580B1 (ko) * 1996-10-02 2000-04-15 김영환 스티칭 노광 공정에 사용되는 마스크
JPH10135103A (ja) * 1996-10-25 1998-05-22 Nikon Corp 荷電粒子線転写用マスクまたはｘ線転写用マスクの製造方法
US5824441A (en) * 1996-12-03 1998-10-20 Lucent Technologies Inc. Lithographic process for device fabrication utilizing back-scattered electron beam signal intensity for alignment
US6051344A (en) * 1997-06-17 2000-04-18 Intel Corporation Multiple reduction photolithography technique
US6180289B1 (en) 1997-07-23 2001-01-30 Nikon Corporation Projection-microlithography mask with separate mask substrates
US5780188A (en) * 1997-08-22 1998-07-14 Micron Technology, Inc. Lithographic system and method for exposing a target utilizing unequal stepping distances
JP4207232B2 (ja) * 1997-09-02 2009-01-14 株式会社ニコン 荷電ビーム露光装置
JPH11142121A (ja) 1997-11-11 1999-05-28 Nikon Corp レチクルの歪み計測方法および歪み計測装置
JPH11168059A (ja) 1997-12-03 1999-06-22 Nikon Corp 荷電粒子線投影光学系
JPH11204422A (ja) * 1998-01-14 1999-07-30 Nikon Corp 荷電粒子線転写方法
US6051346A (en) * 1998-04-29 2000-04-18 Lucent Technologies Inc. Process for fabricating a lithographic mask
GB2338084B (en) * 1998-05-05 2001-12-19 Ims Ionen Mikrofab Syst Lithographic imaging of a structure pattern onto one or more fields on a substrate
US6177218B1 (en) 1998-08-07 2001-01-23 Lucent Technologies Inc. Lithographic process for device fabrication using electron beam imaging
JP2000100715A (ja) 1998-09-17 2000-04-07 Nikon Corp 電子ビーム露光装置の調整方法
JP2000124114A (ja) * 1998-10-14 2000-04-28 Nikon Corp 荷電粒子線投影露光方法、荷電粒子線投影露光装置及びそれに用いるレチクル
US5985498A (en) * 1999-03-01 1999-11-16 Advanced Micro Devices, Inc. Method of characterizing linewidth errors in a scanning lithography system
JP2000323390A (ja) 1999-05-12 2000-11-24 Nikon Corp 荷電粒子線露光装置
JP3348779B2 (ja) * 1999-06-23 2002-11-20 日本電気株式会社 パターン露光マスク、パターン露光方法及び装置、回路製造方法及びシステム、マスク製造方法
JP2001007013A (ja) * 1999-06-24 2001-01-12 Nikon Corp 転写マスクブランクス及びその製造方法
JP3706527B2 (ja) 1999-06-30 2005-10-12 Ｈｏｙａ株式会社 電子線描画用マスクブランクス、電子線描画用マスクおよび電子線描画用マスクの製造方法
US6601025B1 (en) 1999-08-10 2003-07-29 International Business Machines Corporation Method to partition the physical design of an integrated circuit for electrical simulation
US7345290B2 (en) * 1999-10-07 2008-03-18 Agere Systems Inc Lens array for electron beam lithography tool
EP1091383A3 (de) * 1999-10-07 2005-01-19 Lucent Technologies Inc. Elektronenstrahl-Abbildungsgerät
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
US6261726B1 (en) 1999-12-06 2001-07-17 International Business Machines Corporation Projection electron-beam lithography masks using advanced materials and membrane size
JP2001189257A (ja) 1999-12-28 2001-07-10 Nikon Corp 荷電粒子線照明光学系の調整方法
AU2001253715A1 (en) * 2000-04-20 2001-11-07 Coorstek, Inc. Ceramic supports and methods
US6440619B1 (en) 2000-05-25 2002-08-27 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Method of distortion compensation by irradiation of adaptive lithography membrane masks
US6404481B1 (en) * 2000-05-25 2002-06-11 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Adaptive lithography membrane masks
US6630984B2 (en) 2000-08-03 2003-10-07 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
DE10041040A1 (de) * 2000-08-22 2002-03-07 Zeiss Carl Vorrichtung und Verfahren zur Belichtung einer strahlungsempfindlichen Schicht mittels geladener Teilchen sowie Maske hierfür
US6855467B2 (en) * 2000-09-05 2005-02-15 Hoya Corporation Transfer mask, method of dividing pattern or transfer mask, and method of manufacturing transfer mask
US6528799B1 (en) 2000-10-20 2003-03-04 Lucent Technologies, Inc. Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
US6635389B1 (en) 2000-11-07 2003-10-21 International Business Machines Corporation Method of defining and forming membrane regions in a substrate for stencil or membrane marks
TW591342B (en) * 2000-11-30 2004-06-11 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit manufacturing method using a lithographic projection apparatus
DE10117025A1 (de) 2001-04-05 2002-10-10 Zeiss Carl Teilchenoptische Vorrichtung,Beleuchtungsvorrichtung und Projektionssystem sowie Verfahren unter Verwendung derselben
US6610464B2 (en) 2001-05-24 2003-08-26 Agere Systems Inc. Process for patterning a membrane
JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
KR100522725B1 (ko) * 2002-04-04 2005-10-20 주식회사 디엠에스 대면적 마스크 및 이를 구비한 노광 시스템
CN100464440C (zh) * 2002-06-03 2009-02-25 三星移动显示器株式会社 用于有机电致发光装置的薄层真空蒸发的掩模框组件
JP2004088072A (ja) * 2002-06-28 2004-03-18 Sony Corp マスクおよびその検査方法
US6838213B2 (en) * 2002-07-23 2005-01-04 Agere Systems Inc. Process for fabricating a mask
EP1503244A1 (de) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
JP2005340835A (ja) * 2004-05-28 2005-12-08 Hoya Corp 電子線露光用マスクブランクおよびマスク
US20070085984A1 (en) * 2005-10-18 2007-04-19 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
TWI330762B (en) * 2005-03-29 2010-09-21 Asml Netherlands Bv Seal of a lithographic apparatus, lithographic apparatus, device manufacturing method and data storage medium
WO2006123447A1 (ja) * 2005-05-17 2006-11-23 Kyoto University 電子ビーム露光装置
EP2130086A4 (de) * 2007-03-02 2012-03-14 Protochips Inc Membranhalterungen mit verstärkungsmerkmalen
EP2919255A1 (de) * 2007-05-09 2015-09-16 Protochips, Inc. Auflagestrukturen für die mikroskopie
US9312097B2 (en) 2007-05-09 2016-04-12 Protochips, Inc. Specimen holder used for mounting samples in electron microscopes
FR2951288A1 (fr) * 2009-10-09 2011-04-15 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, en transmission, et procede de masquage
TWI477925B (zh) 2011-10-04 2015-03-21 Nuflare Technology Inc Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method

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US4388386A (en) * 1982-06-07 1983-06-14 International Business Machines Corporation Mask set mismatch
ATA331285A (de) * 1985-11-13 1988-11-15 Ims Ionen Mikrofab Syst Verfahren zur herstellung einer transmissionsmaske
DE68924122T2 (de) * 1988-10-20 1996-05-09 Fujitsu Ltd Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.

Also Published As

Publication number Publication date
KR100272116B1 (ko) 2000-12-01
TW198138B (de) 1993-01-11
EP0550173A1 (de) 1993-07-07
EP0550173B1 (de) 2003-05-21
DE69233067T2 (de) 2004-04-01
KR930014841A (ko) 1993-07-23
CA2083112C (en) 1996-10-22
JPH05251317A (ja) 1993-09-28
JP3457346B2 (ja) 2003-10-14
CA2083112A1 (en) 1993-07-01
US5260151A (en) 1993-11-09

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