DE68924122T2 - Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. - Google Patents
Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.Info
- Publication number
- DE68924122T2 DE68924122T2 DE68924122T DE68924122T DE68924122T2 DE 68924122 T2 DE68924122 T2 DE 68924122T2 DE 68924122 T DE68924122 T DE 68924122T DE 68924122 T DE68924122 T DE 68924122T DE 68924122 T2 DE68924122 T2 DE 68924122T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor devices
- charged particle
- particle beam
- transparent mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26461788A JP2674147B2 (ja) | 1988-10-20 | 1988-10-20 | 荷電ビーム露光装置 |
JP26752288A JP2677292B2 (ja) | 1988-10-24 | 1988-10-24 | 半導体装置の製造方法と荷電粒子ビーム用透過マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68924122D1 DE68924122D1 (de) | 1995-10-12 |
DE68924122T2 true DE68924122T2 (de) | 1996-05-09 |
Family
ID=26546590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68924122T Expired - Fee Related DE68924122T2 (de) | 1988-10-20 | 1989-10-16 | Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5036209A (de) |
EP (1) | EP0364929B1 (de) |
DE (1) | DE68924122T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02170410A (ja) * | 1988-12-23 | 1990-07-02 | Hitachi Ltd | 放射線露光用マスクおよびこれを用いた放射線露光方法 |
JPH03270215A (ja) * | 1990-03-20 | 1991-12-02 | Fujitsu Ltd | 荷電粒子ビーム露光方法及び露光装置 |
JP2837515B2 (ja) * | 1990-06-20 | 1998-12-16 | 富士通株式会社 | 電子ビーム露光装置 |
JPH0456210A (ja) * | 1990-06-26 | 1992-02-24 | Mitsubishi Electric Corp | 電子ビーム露光装置 |
JP2837743B2 (ja) * | 1990-06-27 | 1998-12-16 | 富士通株式会社 | 荷電粒子ビーム露光方法およびそれに用いるステンシルマスク |
US5223719A (en) * | 1990-07-06 | 1993-06-29 | Fujitsu Limited | Mask for use in a charged particle beam apparatus including beam passing sections |
JP2957669B2 (ja) * | 1990-09-28 | 1999-10-06 | 株式会社東芝 | 反射マスク及びこれを用いた荷電ビーム露光装置 |
US5367467A (en) * | 1990-11-27 | 1994-11-22 | Dainippon Screen Mfg. Co., Ltd. | Method of and apparatus for inspecting width of wiring line on printed board |
JP2906658B2 (ja) * | 1990-11-30 | 1999-06-21 | 松下電器産業株式会社 | パターン形成方法 |
US5260579A (en) * | 1991-03-13 | 1993-11-09 | Fujitsu Limited | Charged particle beam exposure system and charged particle beam exposure method |
US5250812A (en) * | 1991-03-29 | 1993-10-05 | Hitachi, Ltd. | Electron beam lithography using an aperture having an array of repeated unit patterns |
JP2663063B2 (ja) * | 1991-06-12 | 1997-10-15 | 富士通株式会社 | 荷電ビーム露光方法 |
US5235626A (en) * | 1991-10-22 | 1993-08-10 | International Business Machines Corporation | Segmented mask and exposure system for x-ray lithography |
US5260151A (en) * | 1991-12-30 | 1993-11-09 | At&T Bell Laboratories | Device manufacture involving step-and-scan delineation |
JP3212360B2 (ja) * | 1992-06-16 | 2001-09-25 | 株式会社日立製作所 | マスクの製造方法、および半導体集積回路装置の製造方法 |
JP3173162B2 (ja) * | 1992-08-20 | 2001-06-04 | 富士通株式会社 | 透過マスク板 |
JP3192500B2 (ja) * | 1992-11-19 | 2001-07-30 | 株式会社日立製作所 | 電子線描画方法および電子線描画装置 |
JP3159810B2 (ja) * | 1992-11-30 | 2001-04-23 | 株式会社日立製作所 | 電子線描画方法及びその装置 |
US5466904A (en) * | 1993-12-23 | 1995-11-14 | International Business Machines Corporation | Electron beam lithography system |
US5523580A (en) * | 1993-12-23 | 1996-06-04 | International Business Machines Corporation | Reticle having a number of subfields |
US5674413A (en) * | 1993-12-23 | 1997-10-07 | International Business Machines Corporation | Scattering reticle for electron beam systems |
JP2971313B2 (ja) * | 1993-12-24 | 1999-11-02 | 株式会社東芝 | 欠陥検出装置及び検出方法 |
JPH07201701A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 電子ビーム露光装置および露光方法 |
US5849437A (en) * | 1994-03-25 | 1998-12-15 | Fujitsu Limited | Electron beam exposure mask and method of manufacturing the same and electron beam exposure method |
US5624774A (en) * | 1994-06-16 | 1997-04-29 | Nikon Corporation | Method for transferring patterns with charged particle beam |
JP2725659B2 (ja) * | 1995-11-15 | 1998-03-11 | 日本電気株式会社 | 荷電ビーム描画装置 |
US6040892A (en) * | 1997-08-19 | 2000-03-21 | Micron Technology, Inc. | Multiple image reticle for forming layers |
JP4156700B2 (ja) * | 1998-03-16 | 2008-09-24 | 富士通株式会社 | 露光データ作成方法、露光データ作成装置、及び、記録媒体 |
JP3314762B2 (ja) * | 1999-08-19 | 2002-08-12 | 日本電気株式会社 | 電子線露光用マスク及びこれを用いる電子線露光方法と電子線露光装置並びにデバイスの製造方法 |
US20030087205A1 (en) * | 2001-11-06 | 2003-05-08 | Dennis Warner | System and method for forming features on a semiconductor substrate |
JP4252262B2 (ja) * | 2002-07-11 | 2009-04-08 | 株式会社オクテック | 露光用転写マスクの製造方法 |
DE10324502B3 (de) * | 2003-05-26 | 2005-04-21 | Infineon Technologies Ag | Photomaske, sowie Verfahren zur Herstellung von Halbleiter-Bauelementen |
TWI266152B (en) * | 2003-12-30 | 2006-11-11 | Mosel Vitelic Inc | Mask and method of using the same |
US8426832B2 (en) | 2006-11-21 | 2013-04-23 | D2S, Inc. | Cell projection charged particle beam lithography |
US7772575B2 (en) * | 2006-11-21 | 2010-08-10 | D2S, Inc. | Stencil design and method for cell projection particle beam lithography |
US7897522B2 (en) | 2006-11-21 | 2011-03-01 | Cadence Design Systems, Inc. | Method and system for improving particle beam lithography |
US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US10312091B1 (en) * | 2015-10-13 | 2019-06-04 | Multibeam Corporation | Secure permanent integrated circuit personalization |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2702445C3 (de) * | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat |
DE2739502C3 (de) * | 1977-09-02 | 1980-07-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens |
US4213053A (en) * | 1978-11-13 | 1980-07-15 | International Business Machines Corporation | Electron beam system with character projection capability |
JPS58165325A (ja) * | 1982-03-26 | 1983-09-30 | Jeol Ltd | 電子線露光方法 |
JPS62260322A (ja) * | 1986-05-06 | 1987-11-12 | Hitachi Ltd | 可変成形型電子線描画装置 |
-
1989
- 1989-10-16 EP EP89119187A patent/EP0364929B1/de not_active Expired - Lifetime
- 1989-10-16 DE DE68924122T patent/DE68924122T2/de not_active Expired - Fee Related
- 1989-10-20 US US07/424,733 patent/US5036209A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68924122D1 (de) | 1995-10-12 |
EP0364929B1 (de) | 1995-09-06 |
EP0364929A2 (de) | 1990-04-25 |
US5036209A (en) | 1991-07-30 |
EP0364929A3 (en) | 1990-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |