DE69123610T2 - Belichtungsverfahren - Google Patents

Belichtungsverfahren

Info

Publication number
DE69123610T2
DE69123610T2 DE69123610T DE69123610T DE69123610T2 DE 69123610 T2 DE69123610 T2 DE 69123610T2 DE 69123610 T DE69123610 T DE 69123610T DE 69123610 T DE69123610 T DE 69123610T DE 69123610 T2 DE69123610 T2 DE 69123610T2
Authority
DE
Germany
Prior art keywords
exposure process
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123610T
Other languages
English (en)
Other versions
DE69123610D1 (de
Inventor
Isamu Shimoda
Takao Kariya
Nobutoshi Mizusawa
Kunitaka Ozawa
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2022269A external-priority patent/JP2864034B2/ja
Priority claimed from JP2025071A external-priority patent/JP2829660B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69123610D1 publication Critical patent/DE69123610D1/de
Publication of DE69123610T2 publication Critical patent/DE69123610T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69123610T 1990-02-02 1991-01-31 Belichtungsverfahren Expired - Fee Related DE69123610T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022269A JP2864034B2 (ja) 1990-02-02 1990-02-02 露光方法
JP2025071A JP2829660B2 (ja) 1990-02-06 1990-02-06 露光方法

Publications (2)

Publication Number Publication Date
DE69123610D1 DE69123610D1 (de) 1997-01-30
DE69123610T2 true DE69123610T2 (de) 1997-04-24

Family

ID=26359446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123610T Expired - Fee Related DE69123610T2 (de) 1990-02-02 1991-01-31 Belichtungsverfahren

Country Status (3)

Country Link
US (1) US5498501A (de)
EP (1) EP0440470B1 (de)
DE (1) DE69123610T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808910A (en) * 1993-04-06 1998-09-15 Nikon Corporation Alignment method
JPH07211622A (ja) * 1994-01-27 1995-08-11 Nikon Corp 露光方法及び露光システム
KR100377887B1 (ko) * 1994-02-10 2003-06-18 가부시키가이샤 니콘 정렬방법
JP3100842B2 (ja) * 1994-09-05 2000-10-23 キヤノン株式会社 半導体露光装置及び露光方法
EP1091256A1 (de) * 1994-11-29 2001-04-11 Canon Kabushiki Kaisha Ausrichtungsverfahren und Halbleiterbelichtungsverfahren
JPH08191043A (ja) * 1995-01-11 1996-07-23 Nikon Corp アライメント方法及び該方法で使用される露光装置
US5760878A (en) * 1995-08-30 1998-06-02 Canon Kabushiki Kaisha Exposure apparatus and alignment discrimination method
JP3884098B2 (ja) * 1996-03-22 2007-02-21 株式会社東芝 露光装置および露光方法
KR100471461B1 (ko) * 1996-05-16 2005-07-07 가부시키가이샤 니콘 노광방법및노광장치
US5789300A (en) * 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US5798193A (en) * 1997-05-16 1998-08-25 Micron Technology, Inc. Method and apparatus to accurately correlate defect coordinates between photomask inspection and repair systems
JP3159163B2 (ja) 1998-04-06 2001-04-23 日本電気株式会社 走査露光方法及び走査露光装置
JP3363787B2 (ja) * 1998-05-02 2003-01-08 キヤノン株式会社 露光方法および露光装置
US6342735B1 (en) 1999-09-01 2002-01-29 International Business Machines Corporation Dual use alignment aid
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
TW563042B (en) * 2001-02-26 2003-11-21 Macronix Int Co Ltd Overlay error mode, its sampling strategy procedure and device using the mode and strategy procedure
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6988921B2 (en) 2002-07-23 2006-01-24 Canon Kabushiki Kaisha Recycling method and manufacturing method for an image display apparatus
JP4109944B2 (ja) 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7346878B1 (en) 2003-07-02 2008-03-18 Kla-Tencor Technologies Corporation Apparatus and methods for providing in-chip microtargets for metrology or inspection
US7608468B1 (en) 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US7919845B2 (en) * 2007-12-20 2011-04-05 Xilinx, Inc. Formation of a hybrid integrated circuit device
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
NL2009345A (en) 2011-09-28 2013-04-02 Asml Netherlands Bv Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods.
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4475811A (en) * 1983-04-28 1984-10-09 The Perkin-Elmer Corporation Overlay test measurement systems
JPH0622192B2 (ja) * 1985-04-25 1994-03-23 キヤノン株式会社 表示パネル製造方法
US4676630A (en) * 1985-04-25 1987-06-30 Canon Kabushiki Kaisha Exposure apparatus
US4734746A (en) * 1985-06-24 1988-03-29 Nippon Kogaku K. K. Exposure method and system for photolithography
US4812661A (en) * 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
US4906326A (en) * 1988-03-25 1990-03-06 Canon Kabushiki Kaisha Mask repair system
JP2631395B2 (ja) * 1988-09-09 1997-07-16 キヤノン株式会社 露光装置の制御方法
US5087537A (en) * 1989-10-11 1992-02-11 International Business Machines Corporation Lithography imaging tool and related photolithographic processes

Also Published As

Publication number Publication date
EP0440470A2 (de) 1991-08-07
EP0440470A3 (en) 1992-04-08
DE69123610D1 (de) 1997-01-30
US5498501A (en) 1996-03-12
EP0440470B1 (de) 1996-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee