DE68921033D1 - Belichtungsverfahren. - Google Patents

Belichtungsverfahren.

Info

Publication number
DE68921033D1
DE68921033D1 DE68921033T DE68921033T DE68921033D1 DE 68921033 D1 DE68921033 D1 DE 68921033D1 DE 68921033 T DE68921033 T DE 68921033T DE 68921033 T DE68921033 T DE 68921033T DE 68921033 D1 DE68921033 D1 DE 68921033D1
Authority
DE
Germany
Prior art keywords
exposure process
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921033T
Other languages
English (en)
Other versions
DE68921033T2 (de
Inventor
Makiko Mori
Kunitaka Ozawa
Koji Uda
Isamu Shimoda
Shunichi Uzawa
Fiji Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68921033D1 publication Critical patent/DE68921033D1/de
Publication of DE68921033T2 publication Critical patent/DE68921033T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE68921033T 1988-09-13 1989-09-11 Belichtungsverfahren. Expired - Fee Related DE68921033T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63227387A JPH0276212A (ja) 1988-09-13 1988-09-13 多重露光方法

Publications (2)

Publication Number Publication Date
DE68921033D1 true DE68921033D1 (de) 1995-03-23
DE68921033T2 DE68921033T2 (de) 1995-06-22

Family

ID=16860023

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921033T Expired - Fee Related DE68921033T2 (de) 1988-09-13 1989-09-11 Belichtungsverfahren.

Country Status (4)

Country Link
US (1) US5610965A (de)
EP (1) EP0359497B1 (de)
JP (1) JPH0276212A (de)
DE (1) DE68921033T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2958913B2 (ja) * 1990-05-21 1999-10-06 キヤノン株式会社 X線露光装置
JP2907971B2 (ja) * 1990-08-14 1999-06-21 株式会社東芝 半導体素子用パターンの形成または試験方法
US6645701B1 (en) 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
US6445439B1 (en) * 1999-12-27 2002-09-03 Svg Lithography Systems, Inc. EUV reticle thermal management
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
US6809793B1 (en) * 2002-01-16 2004-10-26 Advanced Micro Devices, Inc. System and method to monitor reticle heating
US7164466B2 (en) * 2002-08-27 2007-01-16 Nikon Corporation Detachable heat sink
JP2004145996A (ja) * 2002-10-25 2004-05-20 Tdk Corp フォトレジスト原盤のカッティング方法、カッティングマシン及び光記録媒体の製造方法
KR101728664B1 (ko) * 2003-05-28 2017-05-02 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
EP3208658B1 (de) 2004-02-04 2018-06-06 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
US7561251B2 (en) * 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006245157A (ja) * 2005-03-02 2006-09-14 Canon Inc 露光方法及び露光装置
US7830493B2 (en) * 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
JP2008058898A (ja) * 2006-09-04 2008-03-13 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法
US9176398B2 (en) * 2008-06-10 2015-11-03 Asml Netherlands B.V. Method and system for thermally conditioning an optical element
JP5400579B2 (ja) * 2008-12-08 2014-01-29 キヤノン株式会社 露光装置およびデバイス製造方法
JP2010147203A (ja) * 2008-12-18 2010-07-01 Nikon Corp 露光方法及びデバイス製造方法
JP2019079595A (ja) * 2016-03-18 2019-05-23 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子のパターニング方法及びパターニング装置
KR20240024837A (ko) * 2021-06-23 2024-02-26 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에서의 레티클의 열 조절을 위한 시스템, 방법 및 디바이스

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD127137B1 (de) * 1976-08-17 1979-11-28 Elektromat Veb Vorrichtung zum kompensieren der waermeeinwirkung an justier- und belichtungseinrichtungen
JPS58191433A (ja) * 1982-05-04 1983-11-08 Fujitsu Ltd X線転写方法および装置
US5171965A (en) * 1984-02-01 1992-12-15 Canon Kabushiki Kaisha Exposure method and apparatus
JPS6197918A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd X線露光装置
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
JPS63119233A (ja) * 1986-11-07 1988-05-23 Hitachi Ltd X線転写装置
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法

Also Published As

Publication number Publication date
EP0359497A2 (de) 1990-03-21
EP0359497A3 (de) 1991-02-27
JPH0276212A (ja) 1990-03-15
US5610965A (en) 1997-03-11
EP0359497B1 (de) 1995-02-08
DE68921033T2 (de) 1995-06-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee