DE68924122D1 - Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. - Google Patents

Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.

Info

Publication number
DE68924122D1
DE68924122D1 DE68924122T DE68924122T DE68924122D1 DE 68924122 D1 DE68924122 D1 DE 68924122D1 DE 68924122 T DE68924122 T DE 68924122T DE 68924122 T DE68924122 T DE 68924122T DE 68924122 D1 DE68924122 D1 DE 68924122D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor devices
charged particle
particle beam
transparent mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68924122T
Other languages
English (en)
Other versions
DE68924122T2 (de
Inventor
Toyotaka Kataoka
Kiichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26461788A external-priority patent/JP2674147B2/ja
Priority claimed from JP26752288A external-priority patent/JP2677292B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68924122D1 publication Critical patent/DE68924122D1/de
Application granted granted Critical
Publication of DE68924122T2 publication Critical patent/DE68924122T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
DE68924122T 1988-10-20 1989-10-16 Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. Expired - Fee Related DE68924122T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26461788A JP2674147B2 (ja) 1988-10-20 1988-10-20 荷電ビーム露光装置
JP26752288A JP2677292B2 (ja) 1988-10-24 1988-10-24 半導体装置の製造方法と荷電粒子ビーム用透過マスク

Publications (2)

Publication Number Publication Date
DE68924122D1 true DE68924122D1 (de) 1995-10-12
DE68924122T2 DE68924122T2 (de) 1996-05-09

Family

ID=26546590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924122T Expired - Fee Related DE68924122T2 (de) 1988-10-20 1989-10-16 Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.

Country Status (3)

Country Link
US (1) US5036209A (de)
EP (1) EP0364929B1 (de)
DE (1) DE68924122T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
JPH03270215A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 荷電粒子ビーム露光方法及び露光装置
JP2837515B2 (ja) * 1990-06-20 1998-12-16 富士通株式会社 電子ビーム露光装置
JPH0456210A (ja) * 1990-06-26 1992-02-24 Mitsubishi Electric Corp 電子ビーム露光装置
JP2837743B2 (ja) * 1990-06-27 1998-12-16 富士通株式会社 荷電粒子ビーム露光方法およびそれに用いるステンシルマスク
US5223719A (en) * 1990-07-06 1993-06-29 Fujitsu Limited Mask for use in a charged particle beam apparatus including beam passing sections
JP2957669B2 (ja) * 1990-09-28 1999-10-06 株式会社東芝 反射マスク及びこれを用いた荷電ビーム露光装置
US5367467A (en) * 1990-11-27 1994-11-22 Dainippon Screen Mfg. Co., Ltd. Method of and apparatus for inspecting width of wiring line on printed board
JP2906658B2 (ja) * 1990-11-30 1999-06-21 松下電器産業株式会社 パターン形成方法
EP0508151B1 (de) * 1991-03-13 1998-08-12 Fujitsu Limited Vorrichtung und Verfahren zur Belichtung mittels Ladungsträgerstrahlen
US5250812A (en) * 1991-03-29 1993-10-05 Hitachi, Ltd. Electron beam lithography using an aperture having an array of repeated unit patterns
JP2663063B2 (ja) * 1991-06-12 1997-10-15 富士通株式会社 荷電ビーム露光方法
US5235626A (en) * 1991-10-22 1993-08-10 International Business Machines Corporation Segmented mask and exposure system for x-ray lithography
US5260151A (en) * 1991-12-30 1993-11-09 At&T Bell Laboratories Device manufacture involving step-and-scan delineation
JP3212360B2 (ja) * 1992-06-16 2001-09-25 株式会社日立製作所 マスクの製造方法、および半導体集積回路装置の製造方法
JP3173162B2 (ja) * 1992-08-20 2001-06-04 富士通株式会社 透過マスク板
JP3192500B2 (ja) * 1992-11-19 2001-07-30 株式会社日立製作所 電子線描画方法および電子線描画装置
JP3159810B2 (ja) * 1992-11-30 2001-04-23 株式会社日立製作所 電子線描画方法及びその装置
US5674413A (en) * 1993-12-23 1997-10-07 International Business Machines Corporation Scattering reticle for electron beam systems
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
US5466904A (en) * 1993-12-23 1995-11-14 International Business Machines Corporation Electron beam lithography system
JP2971313B2 (ja) * 1993-12-24 1999-11-02 株式会社東芝 欠陥検出装置及び検出方法
JPH07201701A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 電子ビーム露光装置および露光方法
US5849437A (en) * 1994-03-25 1998-12-15 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam
JP2725659B2 (ja) * 1995-11-15 1998-03-11 日本電気株式会社 荷電ビーム描画装置
US6040892A (en) * 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
JP4156700B2 (ja) * 1998-03-16 2008-09-24 富士通株式会社 露光データ作成方法、露光データ作成装置、及び、記録媒体
JP3314762B2 (ja) * 1999-08-19 2002-08-12 日本電気株式会社 電子線露光用マスク及びこれを用いる電子線露光方法と電子線露光装置並びにデバイスの製造方法
US20030087205A1 (en) * 2001-11-06 2003-05-08 Dennis Warner System and method for forming features on a semiconductor substrate
JP4252262B2 (ja) * 2002-07-11 2009-04-08 株式会社オクテック 露光用転写マスクの製造方法
DE10324502B3 (de) * 2003-05-26 2005-04-21 Infineon Technologies Ag Photomaske, sowie Verfahren zur Herstellung von Halbleiter-Bauelementen
TWI266152B (en) * 2003-12-30 2006-11-11 Mosel Vitelic Inc Mask and method of using the same
US7772575B2 (en) * 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
US7897522B2 (en) 2006-11-21 2011-03-01 Cadence Design Systems, Inc. Method and system for improving particle beam lithography
US8426832B2 (en) 2006-11-21 2013-04-23 D2S, Inc. Cell projection charged particle beam lithography
US8900982B2 (en) * 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2702445C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat
DE2739502C3 (de) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
JPS58165325A (ja) * 1982-03-26 1983-09-30 Jeol Ltd 電子線露光方法
JPS62260322A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd 可変成形型電子線描画装置

Also Published As

Publication number Publication date
EP0364929B1 (de) 1995-09-06
EP0364929A3 (en) 1990-12-27
US5036209A (en) 1991-07-30
EP0364929A2 (de) 1990-04-25
DE68924122T2 (de) 1996-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee