KR970004082A - InAlAs-InGaAlAs 이질접합 이극 트랜지스터 반도체 장치 - Google Patents

InAlAs-InGaAlAs 이질접합 이극 트랜지스터 반도체 장치 Download PDF

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Publication number
KR970004082A
KR970004082A KR1019960016896A KR19960016896A KR970004082A KR 970004082 A KR970004082 A KR 970004082A KR 1019960016896 A KR1019960016896 A KR 1019960016896A KR 19960016896 A KR19960016896 A KR 19960016896A KR 970004082 A KR970004082 A KR 970004082A
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KR
South Korea
Prior art keywords
ingaalas
inalas
semiconductor devices
bipolar transistor
heterojunction bipolar
Prior art date
Application number
KR1019960016896A
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English (en)
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KR100272391B1 (ko
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Publication date
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Publication of KR970004082A publication Critical patent/KR970004082A/ko
Application granted granted Critical
Publication of KR100272391B1 publication Critical patent/KR100272391B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
KR1019960016896A 1995-06-02 1996-05-20 4기 컬렉터 InAlAs-InGaAlAs 헤테로접합 이극 트랜지스터 반도체 장치 KR100272391B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US490,440 1995-06-02
US08/490,440 US5631477A (en) 1995-06-02 1995-06-02 Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
KR970004082A true KR970004082A (ko) 1997-01-29
KR100272391B1 KR100272391B1 (ko) 2000-11-15

Family

ID=23948053

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016896A KR100272391B1 (ko) 1995-06-02 1996-05-20 4기 컬렉터 InAlAs-InGaAlAs 헤테로접합 이극 트랜지스터 반도체 장치

Country Status (5)

Country Link
US (1) US5631477A (ko)
EP (1) EP0746035B1 (ko)
JP (1) JP2942500B2 (ko)
KR (1) KR100272391B1 (ko)
DE (1) DE69609771T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100440253B1 (ko) * 2002-05-31 2004-07-15 한국전자통신연구원 광수신기 및 그 제조 방법

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2358959B (en) * 1999-10-07 2002-01-16 Win Semiconductors Corp Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
US6420728B1 (en) * 2000-03-23 2002-07-16 Manijeh Razeghi Multi-spectral quantum well infrared photodetectors
JP2002261271A (ja) * 2001-03-01 2002-09-13 Nec Corp 半導体装置及びその製造方法
US6469581B1 (en) 2001-06-08 2002-10-22 Trw Inc. HEMT-HBT doherty microwave amplifier
US6864742B2 (en) * 2001-06-08 2005-03-08 Northrop Grumman Corporation Application of the doherty amplifier as a predistortion circuit for linearizing microwave amplifiers
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor
TW538481B (en) * 2002-06-04 2003-06-21 Univ Nat Cheng Kung InGaP/AlGaAs/GaAs hetero-junction bipolar transistor with zero conduction band discontinuity
US6768141B2 (en) * 2002-08-23 2004-07-27 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure
US20040188712A1 (en) * 2002-10-08 2004-09-30 Eic Corporation Heterojunction bipolar transistor having non-uniformly doped collector for improved safe-operating area
US6806513B2 (en) * 2002-10-08 2004-10-19 Eic Corporation Heterojunction bipolar transistor having wide bandgap material in collector
JP2004172582A (ja) 2002-10-30 2004-06-17 Sharp Corp ヘテロ接合バイポーラトランジスタ
US6809400B2 (en) * 2003-03-14 2004-10-26 Eric Harmon Composite pinin collector structure for heterojunction bipolar transistors
JP2006210452A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置
JP5217110B2 (ja) * 2005-07-26 2013-06-19 ソニー株式会社 半導体装置
JP2007103784A (ja) * 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
JP2007173624A (ja) 2005-12-22 2007-07-05 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法
JP2012069648A (ja) * 2010-09-22 2012-04-05 Hitachi Automotive Systems Ltd 電子制御装置
DE102015102146A1 (de) * 2015-02-13 2016-08-18 Technische Universität Darmstadt Photoleitende Materialschichtanordnung, Verfahren zur Herstellung der photoleitenden Materialschichtanordnung und Verwendung der photoleitenden Materialschichtanordnung
JP2018101652A (ja) * 2016-12-19 2018-06-28 株式会社村田製作所 バイポーラトランジスタ及びその製造方法
JP2018137259A (ja) 2017-02-20 2018-08-30 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
JP2019075424A (ja) * 2017-10-13 2019-05-16 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
TWI643337B (zh) * 2017-10-17 2018-12-01 全新光電科技股份有限公司 具有能隙漸變的電洞阻隔層之異質接面雙極性電晶體結構
US10818781B2 (en) * 2018-10-16 2020-10-27 Visual Photonics Epitaxy Co., Ltd. Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
CA1299771C (en) * 1987-02-06 1992-04-28 Tadao Ishibashi Heterojunction bipolar transistor with collector buffer layer
JPH0795675B2 (ja) * 1987-02-14 1995-10-11 富士通株式会社 比較回路
US4958208A (en) * 1987-08-12 1990-09-18 Nec Corporation Bipolar transistor with abrupt potential discontinuity in collector region
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
DE68906239T2 (de) * 1988-10-27 1993-08-12 Fujitsu Ltd Verfahren zur herstellung eines bipolartransistors mit heterouebergang.
US5284783A (en) * 1988-10-27 1994-02-08 Fujitsu Limited Method of fabricating a heterojunction bipolar transistor
JP2801624B2 (ja) * 1988-12-09 1998-09-21 株式会社東芝 ヘテロ接合バイポーラトランジスタ
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5168077A (en) * 1989-03-31 1992-12-01 Kabushiki Kaisha Toshiba Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition
EP0403293B1 (en) * 1989-06-16 1995-12-06 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor device
US5153693A (en) * 1989-10-18 1992-10-06 At&T Bell Laboratories Circuit including bistable, bipolar transistor
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
US5034783A (en) * 1990-07-27 1991-07-23 At&T Bell Laboratories Semiconductor device including cascadable polarization independent heterostructure
US5171697A (en) * 1991-06-28 1992-12-15 Texas Instruments Incorporated Method of forming multiple layer collector structure for bipolar transistors
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
JPH05109753A (ja) * 1991-08-16 1993-04-30 Toshiba Corp バイポーラトランジスタ
US5179037A (en) * 1991-12-24 1993-01-12 Texas Instruments Incorporated Integration of lateral and vertical quantum well transistors in the same epitaxial stack
US5508535A (en) * 1992-01-09 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Compound semiconductor devices
JPH05243256A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
US5448087A (en) * 1992-04-30 1995-09-05 Trw Inc. Heterojunction bipolar transistor with graded base doping
JPH0669222A (ja) * 1992-08-17 1994-03-11 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100440253B1 (ko) * 2002-05-31 2004-07-15 한국전자통신연구원 광수신기 및 그 제조 방법

Also Published As

Publication number Publication date
EP0746035B1 (en) 2000-08-16
EP0746035A2 (en) 1996-12-04
DE69609771T2 (de) 2000-12-28
EP0746035A3 (en) 1998-03-11
US5631477A (en) 1997-05-20
KR100272391B1 (ko) 2000-11-15
DE69609771D1 (de) 2000-09-21
JPH08330322A (ja) 1996-12-13
JP2942500B2 (ja) 1999-08-30

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