GB2358959B - Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers - Google Patents

Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers

Info

Publication number
GB2358959B
GB2358959B GB0020938A GB0020938A GB2358959B GB 2358959 B GB2358959 B GB 2358959B GB 0020938 A GB0020938 A GB 0020938A GB 0020938 A GB0020938 A GB 0020938A GB 2358959 B GB2358959 B GB 2358959B
Authority
GB
United Kingdom
Prior art keywords
low cost
bipolar transistor
large size
gallium arsenide
material structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0020938A
Other versions
GB0020938D0 (en
GB2358959A (en
Inventor
Peng-Sheng Chao
Chan-Shin Wu
Tony Yen-Chin Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WIN Semiconductors Corp
Original Assignee
WIN Semiconductors Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WIN Semiconductors Corp filed Critical WIN Semiconductors Corp
Publication of GB0020938D0 publication Critical patent/GB0020938D0/en
Publication of GB2358959A publication Critical patent/GB2358959A/en
Application granted granted Critical
Publication of GB2358959B publication Critical patent/GB2358959B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB0020938A 1999-10-07 2000-08-24 Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers Expired - Fee Related GB2358959B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15802699P 1999-10-07 1999-10-07

Publications (3)

Publication Number Publication Date
GB0020938D0 GB0020938D0 (en) 2000-10-11
GB2358959A GB2358959A (en) 2001-08-08
GB2358959B true GB2358959B (en) 2002-01-16

Family

ID=22566406

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0020938A Expired - Fee Related GB2358959B (en) 1999-10-07 2000-08-24 Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers

Country Status (7)

Country Link
JP (1) JP2001144101A (en)
KR (1) KR100400486B1 (en)
CN (1) CN1296291A (en)
CA (1) CA2322080A1 (en)
DE (1) DE10049148A1 (en)
FR (1) FR2799884A1 (en)
GB (1) GB2358959B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122734B2 (en) 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
JP2006210452A (en) * 2005-01-26 2006-08-10 Sony Corp Semiconductor apparatus
CN100452303C (en) * 2005-05-24 2009-01-14 中国科学院微电子研究所 Metal alloy system suitable for ohmic contacting of high speed gallium-arsenide base device
RU2474923C1 (en) * 2011-06-23 2013-02-10 Учреждение Российской академии наук Институт сверхвысокочастотной полупроводниковой электроники РАН (ИСВЧПЭ РАН) SEMICONDUCTOR METAMORPHIC NANOHETEROSTRUCTURE InAlAs/InGaAs
RU2474924C1 (en) * 2011-08-08 2013-02-10 Учреждение Российской академии наук Институт сверхвысокочастотной полупроводниковой электроники РАН (ИСВЧПЭ РАН) Semiconductor nanoheterostructure inalas/ingaas with metac metamorphic buffer
CN102651417B (en) * 2012-05-18 2014-09-03 中国科学院苏州纳米技术与纳米仿生研究所 Three-knot cascading solar battery and preparation method thereof
US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
CN110970340B (en) * 2019-10-31 2022-06-10 中国电子科技集团公司第五十五研究所 Flexible InP HBT device and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0624907A2 (en) * 1993-05-10 1994-11-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor
US5412233A (en) * 1992-06-17 1995-05-02 France Telecom Heterojunction bipolar transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0432220A (en) * 1990-05-28 1992-02-04 Mitsubishi Electric Corp Structure of semiconductor buffer layer
JPH0590283A (en) * 1991-09-30 1993-04-09 Nec Corp Semiconductor device
US5404028A (en) * 1993-01-22 1995-04-04 Hughes Aircraft Company Electrical junction device with lightly doped buffer region to precisely locate a p-n junction
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
KR100243409B1 (en) * 1996-12-12 2000-02-01 이계철 Method for forming epi-layer of pnp/npn compound semiconductor hbt on the same plane
JP2000150529A (en) * 1998-11-06 2000-05-30 Furukawa Electric Co Ltd:The Epitaxial wafer for hetero junction bi-polar transistor
JP2000223498A (en) * 1999-01-28 2000-08-11 Sharp Corp Fabrication of semiconductor device and heterojunction bipolar transistor, and amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5412233A (en) * 1992-06-17 1995-05-02 France Telecom Heterojunction bipolar transistor
EP0624907A2 (en) * 1993-05-10 1994-11-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters, vol 77, no 6, pages 869-871 *

Also Published As

Publication number Publication date
KR20010050866A (en) 2001-06-25
CA2322080A1 (en) 2001-04-07
JP2001144101A (en) 2001-05-25
DE10049148A1 (en) 2001-04-19
FR2799884A1 (en) 2001-04-20
KR100400486B1 (en) 2003-10-01
GB0020938D0 (en) 2000-10-11
GB2358959A (en) 2001-08-08
CN1296291A (en) 2001-05-23

Similar Documents

Publication Publication Date Title
AU2001249808A1 (en) Susceptorless semiconductor wafer support and reactor system for epitaxial layergrowth
AU5324600A (en) Semiconductor wafer carrier
DE60042045D1 (en) Heterojunction bipolar transistors and corresponding manufacturing methods
AU1774001A (en) Semiconductor devices with selectively doped iii-v nitride layers
IL148872A (en) Module containing controlled minienvironment for atmospheric wafer transport
GB0024940D0 (en) Trench isolation structure, semiconductor device having the same, and trench isolation method
AU4318600A (en) Sic wafer, sic semiconductor device and sic wafer production method
EP1242198A4 (en) Single semiconductor wafer processor
KR970004082A (en) InAlAs-InGaAlAs Heterojunction Bipolar Transistor Semiconductor Devices
SG54487A1 (en) Maximising electrical doping while reducing material cracking in iii-v nitride semiconductor devices
HK1045168A1 (en) Resin composition for sealing semiconductor, semiconductor device, semiconductor wafer and mounted structure of semiconductor device
DE60131811D1 (en) heterojunction bipolar transistor
WO2000059084A3 (en) Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
AU2002246934A1 (en) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
GB2358959B (en) Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers
HK1015952A1 (en) Group iii-v compound semiconductor wafer
AU2994500A (en) Semiconductor arrangement with transistor gate insulator
AU3529100A (en) Vacuum system for securing a semiconductor wafer
AU1748701A (en) Method in the fabrication of a silicon bipolar transistor
GB9907717D0 (en) System for growing material over semiconductor wafer
EP1170802A3 (en) Semiconductor gate with semi-insulating diffusion barrier
DE69906209T2 (en) GaAs single crystalline substrate and epitaxial wafer using this substrate
EP1193766A4 (en) Semiconductor device having bipolar transistors
EP0621642A3 (en) Heterojunction bipolar transistor.
EP0624907A3 (en) Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor.

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150824