GB0020938D0 - New metamorphic heterojunction bipolar transistor having material structure forlow cost fabrication on large size gallium arsenide wafers - Google Patents
New metamorphic heterojunction bipolar transistor having material structure forlow cost fabrication on large size gallium arsenide wafersInfo
- Publication number
- GB0020938D0 GB0020938D0 GBGB0020938.7A GB0020938A GB0020938D0 GB 0020938 D0 GB0020938 D0 GB 0020938D0 GB 0020938 A GB0020938 A GB 0020938A GB 0020938 D0 GB0020938 D0 GB 0020938D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- forlow
- bipolar transistor
- large size
- gallium arsenide
- material structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15802699P | 1999-10-07 | 1999-10-07 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0020938D0 true GB0020938D0 (en) | 2000-10-11 |
GB2358959A GB2358959A (en) | 2001-08-08 |
GB2358959B GB2358959B (en) | 2002-01-16 |
Family
ID=22566406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0020938A Expired - Fee Related GB2358959B (en) | 1999-10-07 | 2000-08-24 | Metamorphic heterojunction bipolar transistor having material structure for low cost fabrication on large size gallium arsenide wafers |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP2001144101A (en) |
KR (1) | KR100400486B1 (en) |
CN (1) | CN1296291A (en) |
CA (1) | CA2322080A1 (en) |
DE (1) | DE10049148A1 (en) |
FR (1) | FR2799884A1 (en) |
GB (1) | GB2358959B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7122734B2 (en) | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
JP2006210452A (en) * | 2005-01-26 | 2006-08-10 | Sony Corp | Semiconductor apparatus |
CN100452303C (en) * | 2005-05-24 | 2009-01-14 | 中国科学院微电子研究所 | Metal alloy system suitable for ohmic contact of high-speed gallium arsenide-based device |
RU2474923C1 (en) * | 2011-06-23 | 2013-02-10 | Учреждение Российской академии наук Институт сверхвысокочастотной полупроводниковой электроники РАН (ИСВЧПЭ РАН) | SEMICONDUCTOR METAMORPHIC NANOHETEROSTRUCTURE InAlAs/InGaAs |
RU2474924C1 (en) * | 2011-08-08 | 2013-02-10 | Учреждение Российской академии наук Институт сверхвысокочастотной полупроводниковой электроники РАН (ИСВЧПЭ РАН) | Semiconductor nanoheterostructure inalas/ingaas with metac metamorphic buffer |
CN102651417B (en) * | 2012-05-18 | 2014-09-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-knot cascading solar battery and preparation method thereof |
US20170084771A1 (en) * | 2015-09-21 | 2017-03-23 | The Boeing Company | Antimonide-based high bandgap tunnel junction for semiconductor devices |
CN110970340B (en) * | 2019-10-31 | 2022-06-10 | 中国电子科技集团公司第五十五研究所 | Flexible InP HBT device and preparation method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0432220A (en) * | 1990-05-28 | 1992-02-04 | Mitsubishi Electric Corp | Structure of semiconductor buffer layer |
JPH0590283A (en) * | 1991-09-30 | 1993-04-09 | Nec Corp | Semiconductor device |
FR2692721B1 (en) * | 1992-06-17 | 1995-06-30 | France Telecom | METHOD FOR PRODUCING A BIPOLAR HETEROJUNCTION TRANSISTOR AND TRANSISTOR OBTAINED. |
US5404028A (en) * | 1993-01-22 | 1995-04-04 | Hughes Aircraft Company | Electrical junction device with lightly doped buffer region to precisely locate a p-n junction |
JPH06318606A (en) * | 1993-05-10 | 1994-11-15 | Mitsubishi Electric Corp | Semiconductor device, hbt, and hemt |
US5631477A (en) * | 1995-06-02 | 1997-05-20 | Trw Inc. | Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor |
KR100243409B1 (en) * | 1996-12-12 | 2000-02-01 | 이계철 | Method for forming epi-layer of pnp/npn compound semiconductor hbt on the same plane |
JP2000150529A (en) * | 1998-11-06 | 2000-05-30 | Furukawa Electric Co Ltd:The | Epitaxial wafer for hetero junction bi-polar transistor |
JP2000223498A (en) * | 1999-01-28 | 2000-08-11 | Sharp Corp | Fabrication of semiconductor device and heterojunction bipolar transistor, and amplifier |
-
2000
- 2000-08-24 GB GB0020938A patent/GB2358959B/en not_active Expired - Fee Related
- 2000-09-04 CN CN00124312A patent/CN1296291A/en active Pending
- 2000-09-26 JP JP2000292682A patent/JP2001144101A/en active Pending
- 2000-10-03 CA CA002322080A patent/CA2322080A1/en not_active Abandoned
- 2000-10-04 DE DE10049148A patent/DE10049148A1/en not_active Withdrawn
- 2000-10-05 KR KR10-2000-0058495A patent/KR100400486B1/en not_active IP Right Cessation
- 2000-10-06 FR FR0012813A patent/FR2799884A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2799884A1 (en) | 2001-04-20 |
GB2358959B (en) | 2002-01-16 |
DE10049148A1 (en) | 2001-04-19 |
CA2322080A1 (en) | 2001-04-07 |
CN1296291A (en) | 2001-05-23 |
KR20010050866A (en) | 2001-06-25 |
JP2001144101A (en) | 2001-05-25 |
GB2358959A (en) | 2001-08-08 |
KR100400486B1 (en) | 2003-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150824 |