DE69523526D1 - Komplementäres Halbleiterbauelement mit Heteroübergang - Google Patents

Komplementäres Halbleiterbauelement mit Heteroübergang

Info

Publication number
DE69523526D1
DE69523526D1 DE69523526T DE69523526T DE69523526D1 DE 69523526 D1 DE69523526 D1 DE 69523526D1 DE 69523526 T DE69523526 T DE 69523526T DE 69523526 T DE69523526 T DE 69523526T DE 69523526 D1 DE69523526 D1 DE 69523526D1
Authority
DE
Germany
Prior art keywords
heterojunction
semiconductor device
complementary semiconductor
complementary
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69523526T
Other languages
English (en)
Other versions
DE69523526T2 (de
Inventor
Herbert Goronkin
Saied Nikoo Tehrani
Jen Shen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69523526D1 publication Critical patent/DE69523526D1/de
Publication of DE69523526T2 publication Critical patent/DE69523526T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
DE69523526T 1994-08-29 1995-08-17 Komplementäres Halbleiterbauelement mit Heteroübergang Expired - Fee Related DE69523526T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/297,279 US5883404A (en) 1994-08-29 1994-08-29 Complementary heterojunction semiconductor device

Publications (2)

Publication Number Publication Date
DE69523526D1 true DE69523526D1 (de) 2001-12-06
DE69523526T2 DE69523526T2 (de) 2002-05-08

Family

ID=23145626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523526T Expired - Fee Related DE69523526T2 (de) 1994-08-29 1995-08-17 Komplementäres Halbleiterbauelement mit Heteroübergang

Country Status (4)

Country Link
US (1) US5883404A (de)
EP (1) EP0700092B1 (de)
JP (1) JP3854651B2 (de)
DE (1) DE69523526T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19707115A1 (de) * 1997-02-22 1998-08-27 Hilti Ag Bohr- und/oder Meisselwerkzeug
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US8026509B2 (en) 2008-12-30 2011-09-27 Intel Corporation Tunnel field effect transistor and method of manufacturing same
US9209180B2 (en) * 2010-02-10 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor with conduction band electron channel and uni-terminal response

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
US4768076A (en) * 1984-09-14 1988-08-30 Hitachi, Ltd. Recrystallized CMOS with different crystal planes
US4721983A (en) * 1986-01-31 1988-01-26 Texas Instruments Incorporated Three terminal tunneling device
US4882608A (en) * 1987-02-09 1989-11-21 International Business Machines Corporation Multilayer semiconductor device having multiple paths of current flow
US5138408A (en) * 1988-04-15 1992-08-11 Nec Corporation Resonant tunneling hot carrier transistor
JPH02257669A (ja) * 1989-03-30 1990-10-18 Toshiba Corp 半導体装置
US5113231A (en) * 1989-09-07 1992-05-12 California Institute Of Technology Quantum-effect semiconductor devices
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5142349A (en) * 1991-07-01 1992-08-25 Motorola, Inc. Self-doped high performance complementary heterojunction field effect transistor
US5349214A (en) * 1993-09-13 1994-09-20 Motorola, Inc. Complementary heterojunction device

Also Published As

Publication number Publication date
US5883404A (en) 1999-03-16
EP0700092A3 (de) 1997-09-17
EP0700092A2 (de) 1996-03-06
EP0700092B1 (de) 2001-10-31
JP3854651B2 (ja) 2006-12-06
DE69523526T2 (de) 2002-05-08
JPH0878700A (ja) 1996-03-22

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee