DE69433951D1 - Verbundenes Halbleiterbauelement - Google Patents
Verbundenes HalbleiterbauelementInfo
- Publication number
- DE69433951D1 DE69433951D1 DE69433951T DE69433951T DE69433951D1 DE 69433951 D1 DE69433951 D1 DE 69433951D1 DE 69433951 T DE69433951 T DE 69433951T DE 69433951 T DE69433951 T DE 69433951T DE 69433951 D1 DE69433951 D1 DE 69433951D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- connected semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18345794A | 1994-01-18 | 1994-01-18 | |
US183457 | 2000-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69433951D1 true DE69433951D1 (de) | 2004-09-23 |
DE69433951T2 DE69433951T2 (de) | 2005-09-08 |
Family
ID=22672868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69433951T Expired - Lifetime DE69433951T2 (de) | 1994-01-18 | 1994-12-21 | Verbundenes Halbleiterbauelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US5661316A (de) |
EP (1) | EP0664557B1 (de) |
JP (1) | JP4008048B2 (de) |
KR (1) | KR100337263B1 (de) |
DE (1) | DE69433951T2 (de) |
TW (1) | TW289837B (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0165467B1 (ko) * | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6054369A (en) * | 1997-06-30 | 2000-04-25 | Intersil Corporation | Lifetime control for semiconductor devices |
AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
FR2773261B1 (fr) * | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6171972B1 (en) | 1998-03-17 | 2001-01-09 | Rosemount Aerospace Inc. | Fracture-resistant micromachined devices |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
DE60043536D1 (de) | 1999-03-04 | 2010-01-28 | Nichia Corp | Nitridhalbleiterlaserelement |
US6355541B1 (en) * | 1999-04-21 | 2002-03-12 | Lockheed Martin Energy Research Corporation | Method for transfer of thin-film of silicon carbide via implantation and wafer bonding |
EP1065734B1 (de) * | 1999-06-09 | 2009-05-13 | Kabushiki Kaisha Toshiba | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
US6333208B1 (en) | 1999-07-13 | 2001-12-25 | Li Chiung-Tung | Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding |
US6984571B1 (en) * | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6500694B1 (en) | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US6563133B1 (en) * | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
US7053419B1 (en) | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (ja) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US6525335B1 (en) | 2000-11-06 | 2003-02-25 | Lumileds Lighting, U.S., Llc | Light emitting semiconductor devices including wafer bonded heterostructures |
FR2819099B1 (fr) * | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | Procede de realisation d'une structure empilee |
JP2002250826A (ja) * | 2001-02-22 | 2002-09-06 | Nec Corp | チップ、チップの製造方法およびチップ収容モジュール |
US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
US7238622B2 (en) * | 2001-04-17 | 2007-07-03 | California Institute Of Technology | Wafer bonded virtual substrate and method for forming the same |
US6436794B1 (en) | 2001-05-21 | 2002-08-20 | Hewlett-Packard Company | Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer |
US6440820B1 (en) | 2001-05-21 | 2002-08-27 | Hewlett Packard Company | Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer |
JP4947248B2 (ja) * | 2001-09-14 | 2012-06-06 | Dowaエレクトロニクス株式会社 | ノッチ付き化合物半導体ウエハ |
AU2002307578A1 (en) | 2002-04-30 | 2003-12-02 | Agency For Science Technology And Research | A method of wafer/substrate bonding |
US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
US7259466B2 (en) | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
FR2850487B1 (fr) * | 2002-12-24 | 2005-12-09 | Commissariat Energie Atomique | Procede de realisation de substrats mixtes et structure ainsi obtenue |
US7175707B2 (en) * | 2003-03-24 | 2007-02-13 | Hitachi Cable Ltd. | P-type GaAs single crystal and its production method |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US20060091412A1 (en) * | 2004-10-29 | 2006-05-04 | Wheatley John A | Polarized LED |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US8748923B2 (en) * | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
US7804100B2 (en) * | 2005-03-14 | 2010-09-28 | Philips Lumileds Lighting Company, Llc | Polarization-reversed III-nitride light emitting device |
FR2895571B1 (fr) * | 2005-12-28 | 2008-04-18 | Commissariat Energie Atomique | Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire |
JP4952883B2 (ja) * | 2006-01-17 | 2012-06-13 | ソニー株式会社 | 半導体発光素子 |
US7642197B2 (en) * | 2007-07-09 | 2010-01-05 | Texas Instruments Incorporated | Method to improve performance of secondary active components in an esige CMOS technology |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
FR2937797B1 (fr) * | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
US9004050B2 (en) | 2012-04-19 | 2015-04-14 | Ford Global Technologies, Llc | Gaseous fuel rail sensor diagnostics |
US9482176B2 (en) | 2012-06-13 | 2016-11-01 | Ford Global Technologies, Llc | System and method for compensating gaseous fuel injection |
TWI560905B (en) * | 2014-11-19 | 2016-12-01 | Univ Nat Sun Yat Sen | A light emitting element and manufacturing method thereof |
US10381508B2 (en) | 2014-11-19 | 2019-08-13 | National Sun Yat-Sen University | Light emitting element with an enhanced electroluminescence effect |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
-
1994
- 1994-09-15 TW TW083108537A patent/TW289837B/zh not_active IP Right Cessation
- 1994-12-21 DE DE69433951T patent/DE69433951T2/de not_active Expired - Lifetime
- 1994-12-21 EP EP94309644A patent/EP0664557B1/de not_active Expired - Lifetime
-
1995
- 1995-01-17 JP JP526095A patent/JP4008048B2/ja not_active Expired - Lifetime
- 1995-01-17 KR KR1019950000679A patent/KR100337263B1/ko not_active IP Right Cessation
-
1996
- 1996-09-20 US US08/718,223 patent/US5661316A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69433951T2 (de) | 2005-09-08 |
KR100337263B1 (ko) | 2002-11-20 |
US5661316A (en) | 1997-08-26 |
EP0664557A2 (de) | 1995-07-26 |
EP0664557B1 (de) | 2004-08-18 |
EP0664557A3 (de) | 1996-08-07 |
JP4008048B2 (ja) | 2007-11-14 |
KR950034485A (ko) | 1995-12-28 |
TW289837B (de) | 1996-11-01 |
JPH07221023A (ja) | 1995-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |