DE69513207D1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE69513207D1
DE69513207D1 DE69513207T DE69513207T DE69513207D1 DE 69513207 D1 DE69513207 D1 DE 69513207D1 DE 69513207 T DE69513207 T DE 69513207T DE 69513207 T DE69513207 T DE 69513207T DE 69513207 D1 DE69513207 D1 DE 69513207D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513207T
Other languages
English (en)
Other versions
DE69513207T2 (de
Inventor
Pierre Hermanus Woerlee
Cornelis Maria Hart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69513207D1 publication Critical patent/DE69513207D1/de
Publication of DE69513207T2 publication Critical patent/DE69513207T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69513207T 1994-01-31 1995-01-24 Halbleitervorrichtung Expired - Fee Related DE69513207T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9400108A BE1008052A3 (nl) 1994-01-31 1994-01-31 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE69513207D1 true DE69513207D1 (de) 1999-12-16
DE69513207T2 DE69513207T2 (de) 2000-05-11

Family

ID=3887929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513207T Expired - Fee Related DE69513207T2 (de) 1994-01-31 1995-01-24 Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US5550773A (de)
EP (1) EP0665593B1 (de)
JP (1) JPH07226490A (de)
KR (1) KR950034803A (de)
BE (1) BE1008052A3 (de)
DE (1) DE69513207T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015822B2 (ja) * 1998-03-06 2000-03-06 工業技術院長 固体選択成長用マスク及びその製造方法
US6022770A (en) * 1998-03-24 2000-02-08 International Business Machines Corporation NVRAM utilizing high voltage TFT device and method for making the same
US6777757B2 (en) 2002-04-26 2004-08-17 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
JP5015420B2 (ja) * 2003-08-15 2012-08-29 旺宏電子股▲ふん▼有限公司 プログラマブル消去不要メモリに対するプログラミング方法
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
JP4981661B2 (ja) * 2004-05-06 2012-07-25 サイデンス コーポレーション 分割チャネルアンチヒューズアレイ構造
US7755162B2 (en) * 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US7203111B2 (en) * 2005-02-08 2007-04-10 Hewlett-Packard Development Company, L.P. Method and apparatus for driver circuit in a MEMS device
US20060268593A1 (en) * 2005-05-25 2006-11-30 Spansion Llc Read-only memory array with dielectric breakdown programmability
US10037801B2 (en) 2013-12-06 2018-07-31 Hefei Reliance Memory Limited 2T-1R architecture for resistive RAM
JP2016009738A (ja) 2014-06-24 2016-01-18 株式会社東芝 半導体記憶装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626467A (en) * 1979-08-10 1981-03-14 Toshiba Corp Semiconductor device and the manufacturing process
JPS56104387A (en) * 1980-01-22 1981-08-20 Citizen Watch Co Ltd Display unit
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
JP2529885B2 (ja) * 1989-03-10 1996-09-04 工業技術院長 半導体メモリ及びその動作方法
GB2238683A (en) * 1989-11-29 1991-06-05 Philips Electronic Associated A thin film transistor circuit
JP3109537B2 (ja) * 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
EP0599388B1 (de) * 1992-11-20 2000-08-02 Koninklijke Philips Electronics N.V. Halbleitervorrichtung mit einem programmierbaren Element

Also Published As

Publication number Publication date
DE69513207T2 (de) 2000-05-11
EP0665593B1 (de) 1999-11-10
JPH07226490A (ja) 1995-08-22
EP0665593A1 (de) 1995-08-02
BE1008052A3 (nl) 1996-01-03
KR950034803A (ko) 1995-12-28
US5550773A (en) 1996-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee