FR2728729B1 - Transistor bipolaire a heterojonction - Google Patents

Transistor bipolaire a heterojonction

Info

Publication number
FR2728729B1
FR2728729B1 FR9515410A FR9515410A FR2728729B1 FR 2728729 B1 FR2728729 B1 FR 2728729B1 FR 9515410 A FR9515410 A FR 9515410A FR 9515410 A FR9515410 A FR 9515410A FR 2728729 B1 FR2728729 B1 FR 2728729B1
Authority
FR
France
Prior art keywords
heterojunction transistor
bipolar heterojunction
bipolar
transistor
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9515410A
Other languages
English (en)
Other versions
FR2728729A1 (fr
Inventor
Yasutomo Kajikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2728729A1 publication Critical patent/FR2728729A1/fr
Application granted granted Critical
Publication of FR2728729B1 publication Critical patent/FR2728729B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/6631Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318Heterojunction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/737Hetero-junction transistors
    • H01L29/7371Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR9515410A 1994-12-26 1995-12-22 Transistor bipolaire a heterojonction Expired - Fee Related FR2728729B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6321870A JPH08181151A (ja) 1994-12-26 1994-12-26 バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
FR2728729A1 FR2728729A1 (fr) 1996-06-28
FR2728729B1 true FR2728729B1 (fr) 1997-05-30

Family

ID=18137329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9515410A Expired - Fee Related FR2728729B1 (fr) 1994-12-26 1995-12-22 Transistor bipolaire a heterojonction

Country Status (3)

Country Link
JP (1) JPH08181151A (fr)
DE (1) DE19547966A1 (fr)
FR (1) FR2728729B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737684B1 (en) 1998-02-20 2004-05-18 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device
DE19834491A1 (de) * 1998-07-31 2000-02-03 Daimler Chrysler Ag Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
US7262484B2 (en) 2005-05-09 2007-08-28 International Business Machines Corporation Structure and method for performance improvement in vertical bipolar transistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03124033A (ja) * 1989-10-09 1991-05-27 Fujitsu Ltd ヘテロ接合バイポーラ・トランジスタ
JPH0669222A (ja) * 1992-08-17 1994-03-11 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH08181151A (ja) 1996-07-12
DE19547966A1 (de) 1996-06-27
FR2728729A1 (fr) 1996-06-28

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Legal Events

Date Code Title Description
ST Notification of lapse