CN100570890C - 使用沟槽结构的横向半导体器件及其制造方法 - Google Patents
使用沟槽结构的横向半导体器件及其制造方法 Download PDFInfo
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- CN100570890C CN100570890C CNB2005100809943A CN200510080994A CN100570890C CN 100570890 C CN100570890 C CN 100570890C CN B2005100809943 A CNB2005100809943 A CN B2005100809943A CN 200510080994 A CN200510080994 A CN 200510080994A CN 100570890 C CN100570890 C CN 100570890C
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- semiconductor device
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP195887/04 | 2004-07-01 | ||
JP2004195887 | 2004-07-01 | ||
JP144867/05 | 2005-05-18 |
Publications (2)
Publication Number | Publication Date |
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CN1722464A CN1722464A (zh) | 2006-01-18 |
CN100570890C true CN100570890C (zh) | 2009-12-16 |
Family
ID=35912564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005100809943A Expired - Fee Related CN100570890C (zh) | 2004-07-01 | 2005-06-30 | 使用沟槽结构的横向半导体器件及其制造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP5486654B2 (zh) |
CN (1) | CN100570890C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112774A (zh) * | 2014-01-14 | 2014-10-22 | 西安后羿半导体科技有限公司 | 一种横向双扩散金属氧化物半导体场效应管 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5159365B2 (ja) * | 2008-02-26 | 2013-03-06 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
CN101770956B (zh) * | 2009-01-07 | 2012-09-19 | 尼克森微电子股份有限公司 | 功率金属氧化物半导体场效应晶体管及其制造方法 |
CN103681843B (zh) * | 2012-09-18 | 2017-07-14 | 无锡华润华晶微电子有限公司 | 平面型vdmos晶体管及其制备方法 |
US9105719B2 (en) * | 2013-01-09 | 2015-08-11 | Broadcom Corporation | Multigate metal oxide semiconductor devices and fabrication methods |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2994670B2 (ja) * | 1989-12-02 | 1999-12-27 | 忠弘 大見 | 半導体装置及びその製造方法 |
JPH05110083A (ja) * | 1991-10-15 | 1993-04-30 | Oki Electric Ind Co Ltd | 電界効果トランジスタ |
JPH065856A (ja) * | 1992-06-19 | 1994-01-14 | Kawasaki Steel Corp | 半導体装置 |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH0923011A (ja) * | 1995-07-05 | 1997-01-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3405681B2 (ja) * | 1997-07-31 | 2003-05-12 | 株式会社東芝 | 半導体装置 |
-
2005
- 2005-06-30 CN CNB2005100809943A patent/CN100570890C/zh not_active Expired - Fee Related
-
2012
- 2012-09-04 JP JP2012193987A patent/JP5486654B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112774A (zh) * | 2014-01-14 | 2014-10-22 | 西安后羿半导体科技有限公司 | 一种横向双扩散金属氧化物半导体场效应管 |
Also Published As
Publication number | Publication date |
---|---|
JP5486654B2 (ja) | 2014-05-07 |
JP2013030786A (ja) | 2013-02-07 |
CN1722464A (zh) | 2006-01-18 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160311 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20200630 |