CN103650148B - 绝缘栅双极晶体管 - Google Patents
绝缘栅双极晶体管 Download PDFInfo
- Publication number
- CN103650148B CN103650148B CN201280033829.0A CN201280033829A CN103650148B CN 103650148 B CN103650148 B CN 103650148B CN 201280033829 A CN201280033829 A CN 201280033829A CN 103650148 B CN103650148 B CN 103650148B
- Authority
- CN
- China
- Prior art keywords
- layer
- base layer
- trap
- igbt
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005516 deep trap Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11173059.4 | 2011-07-07 | ||
EP11173059 | 2011-07-07 | ||
PCT/EP2012/063303 WO2013004829A1 (en) | 2011-07-07 | 2012-07-06 | Insulated gate bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103650148A CN103650148A (zh) | 2014-03-19 |
CN103650148B true CN103650148B (zh) | 2016-06-01 |
Family
ID=44802583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280033829.0A Active CN103650148B (zh) | 2011-07-07 | 2012-07-06 | 绝缘栅双极晶体管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9105680B2 (zh) |
JP (1) | JP5985624B2 (zh) |
KR (1) | KR101840903B1 (zh) |
CN (1) | CN103650148B (zh) |
DE (1) | DE112012002823B4 (zh) |
GB (1) | GB2506075B (zh) |
WO (1) | WO2013004829A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2506075B (en) * | 2011-07-07 | 2015-09-23 | Abb Technology Ag | Insulated gate bipolar transistor |
KR101933242B1 (ko) * | 2011-07-14 | 2018-12-27 | 에이비비 슈바이쯔 아게 | 절연형 게이트 트랜지스터 및 그 제조 방법 |
JP2014160720A (ja) * | 2013-02-19 | 2014-09-04 | Sanken Electric Co Ltd | 半導体装置 |
JP6256075B2 (ja) * | 2014-02-13 | 2018-01-10 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
CN103943673B (zh) * | 2014-05-04 | 2017-02-01 | 常州中明半导体技术有限公司 | 具有不连续沟槽的沟槽双极型晶体管 |
JP6354458B2 (ja) * | 2014-08-27 | 2018-07-11 | 富士電機株式会社 | 半導体装置 |
JPWO2016113865A1 (ja) * | 2015-01-14 | 2017-07-13 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
EP3251153B1 (en) * | 2015-01-27 | 2018-06-20 | ABB Schweiz AG | Insulated gate power semiconductor device and method for manufacturing such a device |
JP6729999B2 (ja) * | 2015-02-16 | 2020-07-29 | 富士電機株式会社 | 半導体装置 |
KR101748141B1 (ko) | 2015-02-17 | 2017-06-19 | 전남대학교산학협력단 | 절연 게이트 양극성 트랜지스터 |
JP5925928B1 (ja) * | 2015-02-26 | 2016-05-25 | 日本航空電子工業株式会社 | 電気接続構造および電気接続部材 |
CN105047706B (zh) * | 2015-08-28 | 2019-02-05 | 国网智能电网研究院 | 一种低通态损耗igbt及其制造方法 |
US9780202B2 (en) * | 2015-08-31 | 2017-10-03 | Ixys Corporation | Trench IGBT with waved floating P-well electron injection |
US10367085B2 (en) | 2015-08-31 | 2019-07-30 | Littelfuse, Inc. | IGBT with waved floating P-Well electron injection |
EP3471147B1 (en) * | 2017-10-10 | 2020-08-05 | ABB Power Grids Switzerland AG | Insulated gate bipolar transistor |
CN109768080B (zh) * | 2019-01-23 | 2021-03-30 | 电子科技大学 | 一种具有mos控制空穴通路的igbt器件 |
GB2592927A (en) * | 2020-03-10 | 2021-09-15 | Mqsemi Ag | Semiconductor device with fortifying layer |
GB2602663A (en) * | 2021-01-11 | 2022-07-13 | Mqsemi Ag | Semiconductor device |
US11610987B2 (en) * | 2021-05-18 | 2023-03-21 | Pakal Technologies, Inc | NPNP layered MOS-gated trench device having lowered operating voltage |
US20230021169A1 (en) * | 2021-07-13 | 2023-01-19 | Analog Power Conversion LLC | Semiconductor device with deep trench and manufacturing process thereof |
US11935923B2 (en) | 2021-08-24 | 2024-03-19 | Globalfoundries U.S. Inc. | Lateral bipolar transistor with gated collector |
US11935928B2 (en) | 2022-02-23 | 2024-03-19 | Globalfoundries U.S. Inc. | Bipolar transistor with self-aligned asymmetric spacer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
EP1811572A2 (en) * | 1999-02-17 | 2007-07-25 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0837508A3 (en) * | 1996-10-18 | 1999-01-20 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
JP4310017B2 (ja) * | 1999-02-17 | 2009-08-05 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
JP4799829B2 (ja) * | 2003-08-27 | 2011-10-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ及びインバータ回路 |
US20070063269A1 (en) * | 2005-09-20 | 2007-03-22 | International Rectifier Corp. | Trench IGBT with increased short circuit capability |
JP2007134625A (ja) * | 2005-11-14 | 2007-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5235443B2 (ja) * | 2008-02-13 | 2013-07-10 | 株式会社日立製作所 | トレンチゲート型半導体装置 |
JP4688901B2 (ja) * | 2008-05-13 | 2011-05-25 | 三菱電機株式会社 | 半導体装置 |
JP4644730B2 (ja) * | 2008-08-12 | 2011-03-02 | 株式会社日立製作所 | 半導体装置及びそれを用いた電力変換装置 |
JP5963385B2 (ja) * | 2008-11-26 | 2016-08-03 | 富士電機株式会社 | 半導体装置 |
JP5447504B2 (ja) * | 2009-03-24 | 2014-03-19 | トヨタ自動車株式会社 | 半導体装置 |
JP5686507B2 (ja) * | 2009-08-12 | 2015-03-18 | 株式会社 日立パワーデバイス | トレンチゲート型半導体装置 |
TWI404205B (zh) * | 2009-10-06 | 2013-08-01 | Anpec Electronics Corp | 絕緣閘雙極電晶體與快速逆向恢復時間整流器之整合結構及其製作方法 |
JP5452195B2 (ja) * | 2009-12-03 | 2014-03-26 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
US20120273897A1 (en) * | 2010-01-04 | 2012-11-01 | Hitachi, Ltd. | Semiconductor Device and Electric Power Conversion Device Using Same |
JP5694505B2 (ja) * | 2010-03-23 | 2015-04-01 | アーベーベー・テヒノロギー・アーゲー | 電力半導体デバイス |
GB2506075B (en) * | 2011-07-07 | 2015-09-23 | Abb Technology Ag | Insulated gate bipolar transistor |
KR101933242B1 (ko) * | 2011-07-14 | 2018-12-27 | 에이비비 슈바이쯔 아게 | 절연형 게이트 트랜지스터 및 그 제조 방법 |
DE112013001487T5 (de) * | 2012-03-16 | 2014-12-04 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP6024751B2 (ja) * | 2012-07-18 | 2016-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
-
2012
- 2012-07-06 GB GB1400075.6A patent/GB2506075B/en active Active
- 2012-07-06 KR KR1020147003224A patent/KR101840903B1/ko active IP Right Grant
- 2012-07-06 WO PCT/EP2012/063303 patent/WO2013004829A1/en active Application Filing
- 2012-07-06 JP JP2014517832A patent/JP5985624B2/ja active Active
- 2012-07-06 CN CN201280033829.0A patent/CN103650148B/zh active Active
- 2012-07-06 DE DE112012002823.6T patent/DE112012002823B4/de active Active
-
2014
- 2014-01-07 US US14/149,412 patent/US9105680B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
EP1811572A2 (en) * | 1999-02-17 | 2007-07-25 | Hitachi, Ltd. | Semiconductor device and power converter using the same |
Also Published As
Publication number | Publication date |
---|---|
WO2013004829A1 (en) | 2013-01-10 |
KR101840903B1 (ko) | 2018-03-21 |
GB201400075D0 (en) | 2014-02-19 |
DE112012002823B4 (de) | 2017-09-07 |
JP5985624B2 (ja) | 2016-09-06 |
US9105680B2 (en) | 2015-08-11 |
JP2014523122A (ja) | 2014-09-08 |
DE112012002823T5 (de) | 2014-08-21 |
GB2506075A (en) | 2014-03-19 |
KR20140046018A (ko) | 2014-04-17 |
CN103650148A (zh) | 2014-03-19 |
US20140124829A1 (en) | 2014-05-08 |
GB2506075B (en) | 2015-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103650148B (zh) | 绝缘栅双极晶体管 | |
CN103748685B (zh) | 绝缘栅双极晶体管 | |
JP4132102B2 (ja) | 高いブレークダウン電圧と低いオン抵抗を兼ね備えたトレンチ型mosfet | |
US20030075760A1 (en) | Semiconductor device and method of manufacturing the same | |
US10629714B2 (en) | Insulated gate bipolar transistor | |
CN1552101B (zh) | 具有轻掺杂源结构的凹槽dmos晶体管 | |
CN107068759A (zh) | 半导体器件及其制造方法 | |
KR100948663B1 (ko) | 복수의 트렌치 mosfet 셀들을 포함하는 디바이스를 형성하는 방법, 및 얕은 및 깊은 도펀트 주입물 형성 방법 | |
CN111384168A (zh) | 沟槽mosfet和沟槽mosfet的制造方法 | |
CN104576730B (zh) | 超级结器件及其制造方法 | |
CN103094342B (zh) | 功率晶体管组件及其制作方法 | |
CN101385151B (zh) | 具有自偏压电极的横向功率器件 | |
CN102449770B (zh) | 用于半导体器件的3d沟道结构 | |
CN116722027A (zh) | 一种具有载流子存储层的超结igbt器件及其制造方法 | |
CN104425596B (zh) | 超级结器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180510 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20210622 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240109 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
|
TR01 | Transfer of patent right |