DE69426045D1 - Bipolartransistor mit isoliertem Gate - Google Patents

Bipolartransistor mit isoliertem Gate

Info

Publication number
DE69426045D1
DE69426045D1 DE69426045T DE69426045T DE69426045D1 DE 69426045 D1 DE69426045 D1 DE 69426045D1 DE 69426045 T DE69426045 T DE 69426045T DE 69426045 T DE69426045 T DE 69426045T DE 69426045 D1 DE69426045 D1 DE 69426045D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69426045T
Other languages
English (en)
Other versions
DE69426045T2 (de
Inventor
Tadashi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69426045D1 publication Critical patent/DE69426045D1/de
Publication of DE69426045T2 publication Critical patent/DE69426045T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69426045T 1993-07-12 1994-07-12 Bipolartransistor mit isoliertem Gate Expired - Fee Related DE69426045T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19387793A JP3182262B2 (ja) 1993-07-12 1993-07-12 半導体装置

Publications (2)

Publication Number Publication Date
DE69426045D1 true DE69426045D1 (de) 2000-11-09
DE69426045T2 DE69426045T2 (de) 2001-05-10

Family

ID=16315235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426045T Expired - Fee Related DE69426045T2 (de) 1993-07-12 1994-07-12 Bipolartransistor mit isoliertem Gate

Country Status (4)

Country Link
US (1) US5485022A (de)
EP (1) EP0634796B1 (de)
JP (1) JP3182262B2 (de)
DE (1) DE69426045T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
US5757037A (en) * 1995-02-01 1998-05-26 Silicon Power Corporation Power thyristor with MOS gated turn-off and MOS-assised turn-on
KR970054363A (ko) * 1995-12-30 1997-07-31 김광호 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법
DE19750827A1 (de) * 1997-11-17 1999-05-20 Asea Brown Boveri Leistungshalbleiterbauelement mit Emitterinjektionssteuerung
US8314002B2 (en) * 2000-05-05 2012-11-20 International Rectifier Corporation Semiconductor device having increased switching speed
DE10117483A1 (de) * 2001-04-07 2002-10-17 Bosch Gmbh Robert Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
US7157785B2 (en) * 2003-08-29 2007-01-02 Fuji Electric Device Technology Co., Ltd. Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
JP4821088B2 (ja) * 2003-12-25 2011-11-24 富士電機株式会社 逆阻止型絶縁ゲート形バイポーラトランジスタの製造方法
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
JP2007288094A (ja) * 2006-04-20 2007-11-01 Fuji Electric Device Technology Co Ltd Ｉｇｂｔとそれを駆動するゲート駆動回路
JP5150953B2 (ja) * 2008-01-23 2013-02-27 三菱電機株式会社 半導体装置
JP5721339B2 (ja) * 2010-04-01 2015-05-20 三菱電機株式会社 半導体装置
CN102412270A (zh) * 2011-07-01 2012-04-11 上海华虹Nec电子有限公司 Igbt结构及其制备方法
US8803225B2 (en) * 2012-01-12 2014-08-12 Tsinghua University Tunneling field effect transistor having a lightly doped buried layer
EP2637210A1 (de) * 2012-03-05 2013-09-11 ABB Technology AG Leistungshalbleiterbauelement und Verfahren zu seiner Herstellung
CN102945856A (zh) * 2012-10-30 2013-02-27 扬州虹扬科技发展有限公司 一种逆导igbt结构及其制备方法
JP6168513B2 (ja) * 2013-05-13 2017-07-26 ローム株式会社 半導体装置およびその製造方法
DE102013009985B4 (de) 2013-06-14 2019-06-13 X-Fab Semiconductor Foundries Ag IGBT-Leistungstransistor, herstellbar in einer grabenisolierten SOI-Technologie und Verfahren zu seiner Herstellung
JP2015023118A (ja) * 2013-07-18 2015-02-02 株式会社東芝 半導体装置
US10141829B2 (en) 2016-06-29 2018-11-27 John Bean Technologies Corporation Multiple power topologies from single power generator
CN107749420B (zh) * 2017-11-20 2023-09-01 电子科技大学 一种逆阻型igbt

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JPH0680832B2 (ja) * 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
JPH01125864A (ja) * 1987-11-10 1989-05-18 Meidensha Corp 自己消弧型半導体装置
JPH0828506B2 (ja) * 1988-11-07 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
JPH0783120B2 (ja) * 1988-09-01 1995-09-06 三菱電機株式会社 バイポーラ型半導体スイッチング装置
US5017992A (en) * 1989-03-29 1991-05-21 Asea Brown Boveri Ltd. High blocking-capacity semiconductor component
CH678245A5 (de) * 1989-06-07 1991-08-15 Asea Brown Boveri
JPH0414263A (ja) * 1990-05-07 1992-01-20 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JPH05193877A (ja) * 1992-01-16 1993-08-03 Mitsubishi Electric Corp エレベーターのかご装置
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置

Also Published As

Publication number Publication date
DE69426045T2 (de) 2001-05-10
EP0634796B1 (de) 2000-10-04
JP3182262B2 (ja) 2001-07-03
EP0634796A1 (de) 1995-01-18
US5485022A (en) 1996-01-16
JPH0730105A (ja) 1995-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee