DE69426045D1 - Bipolartransistor mit isoliertem Gate - Google Patents
Bipolartransistor mit isoliertem GateInfo
- Publication number
- DE69426045D1 DE69426045D1 DE69426045T DE69426045T DE69426045D1 DE 69426045 D1 DE69426045 D1 DE 69426045D1 DE 69426045 T DE69426045 T DE 69426045T DE 69426045 T DE69426045 T DE 69426045T DE 69426045 D1 DE69426045 D1 DE 69426045D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- insulated gate
- gate bipolar
- insulated
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19387793A JP3182262B2 (ja) | 1993-07-12 | 1993-07-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69426045D1 true DE69426045D1 (de) | 2000-11-09 |
DE69426045T2 DE69426045T2 (de) | 2001-05-10 |
Family
ID=16315235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69426045T Expired - Fee Related DE69426045T2 (de) | 1993-07-12 | 1994-07-12 | Bipolartransistor mit isoliertem Gate |
Country Status (4)
Country | Link |
---|---|
US (1) | US5485022A (de) |
EP (1) | EP0634796B1 (de) |
JP (1) | JP3182262B2 (de) |
DE (1) | DE69426045T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5981981A (en) * | 1993-10-13 | 1999-11-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including a bipolar structure |
US5757037A (en) * | 1995-02-01 | 1998-05-26 | Silicon Power Corporation | Power thyristor with MOS gated turn-off and MOS-assised turn-on |
KR970054363A (ko) * | 1995-12-30 | 1997-07-31 | 김광호 | 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법 |
DE19750827A1 (de) * | 1997-11-17 | 1999-05-20 | Asea Brown Boveri | Leistungshalbleiterbauelement mit Emitterinjektionssteuerung |
US8314002B2 (en) * | 2000-05-05 | 2012-11-20 | International Rectifier Corporation | Semiconductor device having increased switching speed |
DE10117483A1 (de) * | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
SE525574C2 (sv) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
US7157785B2 (en) * | 2003-08-29 | 2007-01-02 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices |
JP4821088B2 (ja) * | 2003-12-25 | 2011-11-24 | 富士電機株式会社 | 逆阻止型絶縁ゲート形バイポーラトランジスタの製造方法 |
JP2005333055A (ja) * | 2004-05-21 | 2005-12-02 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2007288094A (ja) * | 2006-04-20 | 2007-11-01 | Fuji Electric Device Technology Co Ltd | Igbtとそれを駆動するゲート駆動回路 |
JP5150953B2 (ja) * | 2008-01-23 | 2013-02-27 | 三菱電機株式会社 | 半導体装置 |
JP5721339B2 (ja) * | 2010-04-01 | 2015-05-20 | 三菱電機株式会社 | 半導体装置 |
CN102412270A (zh) * | 2011-07-01 | 2012-04-11 | 上海华虹Nec电子有限公司 | Igbt结构及其制备方法 |
US8803225B2 (en) * | 2012-01-12 | 2014-08-12 | Tsinghua University | Tunneling field effect transistor having a lightly doped buried layer |
EP2637210A1 (de) * | 2012-03-05 | 2013-09-11 | ABB Technology AG | Leistungshalbleiterbauelement und Verfahren zu seiner Herstellung |
CN102945856A (zh) * | 2012-10-30 | 2013-02-27 | 扬州虹扬科技发展有限公司 | 一种逆导igbt结构及其制备方法 |
JP6168513B2 (ja) * | 2013-05-13 | 2017-07-26 | ローム株式会社 | 半導体装置およびその製造方法 |
DE102013009985B4 (de) | 2013-06-14 | 2019-06-13 | X-Fab Semiconductor Foundries Ag | IGBT-Leistungstransistor, herstellbar in einer grabenisolierten SOI-Technologie und Verfahren zu seiner Herstellung |
JP2015023118A (ja) * | 2013-07-18 | 2015-02-02 | 株式会社東芝 | 半導体装置 |
US10141829B2 (en) | 2016-06-29 | 2018-11-27 | John Bean Technologies Corporation | Multiple power topologies from single power generator |
CN107749420B (zh) * | 2017-11-20 | 2023-09-01 | 电子科技大学 | 一种逆阻型igbt |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61185971A (ja) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | 伝導度変調型半導体装置 |
US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型mosfet |
JPH0680832B2 (ja) * | 1987-09-30 | 1994-10-12 | 日本電気株式会社 | 半導体装置 |
US4951110A (en) * | 1987-11-03 | 1990-08-21 | Siemens Aktiengesellschaft | Power semiconductor structural element with four layers |
JPH01125864A (ja) * | 1987-11-10 | 1989-05-18 | Meidensha Corp | 自己消弧型半導体装置 |
JPH0828506B2 (ja) * | 1988-11-07 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH0783120B2 (ja) * | 1988-09-01 | 1995-09-06 | 三菱電機株式会社 | バイポーラ型半導体スイッチング装置 |
US5017992A (en) * | 1989-03-29 | 1991-05-21 | Asea Brown Boveri Ltd. | High blocking-capacity semiconductor component |
CH678245A5 (de) * | 1989-06-07 | 1991-08-15 | Asea Brown Boveri | |
JPH0414263A (ja) * | 1990-05-07 | 1992-01-20 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JPH05193877A (ja) * | 1992-01-16 | 1993-08-03 | Mitsubishi Electric Corp | エレベーターのかご装置 |
JPH06163907A (ja) * | 1992-11-20 | 1994-06-10 | Hitachi Ltd | 電圧駆動型半導体装置 |
-
1993
- 1993-07-12 JP JP19387793A patent/JP3182262B2/ja not_active Expired - Fee Related
-
1994
- 1994-07-12 US US08/273,758 patent/US5485022A/en not_active Expired - Lifetime
- 1994-07-12 DE DE69426045T patent/DE69426045T2/de not_active Expired - Fee Related
- 1994-07-12 EP EP94110811A patent/EP0634796B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0634796A1 (de) | 1995-01-18 |
JPH0730105A (ja) | 1995-01-31 |
JP3182262B2 (ja) | 2001-07-03 |
DE69426045T2 (de) | 2001-05-10 |
US5485022A (en) | 1996-01-16 |
EP0634796B1 (de) | 2000-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |