DE69223738D1 - MOS-Gate-kontrollierter Thyristor - Google Patents

MOS-Gate-kontrollierter Thyristor

Info

Publication number
DE69223738D1
DE69223738D1 DE69223738T DE69223738T DE69223738D1 DE 69223738 D1 DE69223738 D1 DE 69223738D1 DE 69223738 T DE69223738 T DE 69223738T DE 69223738 T DE69223738 T DE 69223738T DE 69223738 D1 DE69223738 D1 DE 69223738D1
Authority
DE
Germany
Prior art keywords
mos gate
gate controlled
controlled thyristor
thyristor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223738T
Other languages
English (en)
Other versions
DE69223738T2 (de
Inventor
Hidetoshi Nakanishi
Yasunori Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69223738D1 publication Critical patent/DE69223738D1/de
Publication of DE69223738T2 publication Critical patent/DE69223738T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69223738T 1991-10-31 1992-10-30 MOS-Gate-kontrollierter Thyristor Expired - Fee Related DE69223738T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31142291 1991-10-31

Publications (2)

Publication Number Publication Date
DE69223738D1 true DE69223738D1 (de) 1998-02-05
DE69223738T2 DE69223738T2 (de) 1998-05-14

Family

ID=18017013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223738T Expired - Fee Related DE69223738T2 (de) 1991-10-31 1992-10-30 MOS-Gate-kontrollierter Thyristor

Country Status (4)

Country Link
US (1) US5336907A (de)
EP (1) EP0540017B1 (de)
KR (2) KR930009112A (de)
DE (1) DE69223738T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
JP3297129B2 (ja) * 1992-10-08 2002-07-02 株式会社東芝 半導体装置
JP3278496B2 (ja) * 1993-06-14 2002-04-30 株式会社東芝 半導体装置およびその駆動方法
US5498884A (en) * 1994-06-24 1996-03-12 International Rectifier Corporation MOS-controlled thyristor with current saturation characteristics
EP0696066A3 (de) * 1994-06-30 1998-06-24 Hitachi, Ltd. Schaltungs-Halbleiterbauteil und Leistungswandler
US5444272A (en) * 1994-07-28 1995-08-22 International Rectifier Corporation Three-terminal thyristor with single MOS-gate controlled characteristics
DE10300759B4 (de) * 2002-01-15 2006-02-02 De Doncker, Rik W., Prof. Dr. ir. Abschaltbares Leistungshalbleiterbauelement
US9005642B2 (en) * 2006-01-24 2015-04-14 No-Burn Investments, L.L.C. Intumescent fire retardant paint with insecticide
JP2011249601A (ja) * 2010-05-27 2011-12-08 Shindengen Electric Mfg Co Ltd 短絡型サイリスタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JPH0758776B2 (ja) * 1986-08-22 1995-06-21 株式会社日立製作所 複合半導体装置
JPH0624244B2 (ja) * 1987-06-12 1994-03-30 株式会社日立製作所 複合半導体装置
EP0340445B1 (de) * 1988-04-22 1993-08-25 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
DE4025122A1 (de) * 1989-10-24 1991-04-25 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement in form eines mos-gesteuerten thyristors mct
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
JPH0795597B2 (ja) * 1990-08-18 1995-10-11 三菱電機株式会社 サイリスタおよびその製造方法

Also Published As

Publication number Publication date
DE69223738T2 (de) 1998-05-14
US5336907A (en) 1994-08-09
EP0540017B1 (de) 1997-12-29
KR0114765Y1 (ko) 1998-04-16
KR930009112A (ko) 1993-05-22
EP0540017A1 (de) 1993-05-05

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee