DE69321642D1 - MOS-kontrollierter Thyristor - Google Patents
MOS-kontrollierter ThyristorInfo
- Publication number
- DE69321642D1 DE69321642D1 DE69321642T DE69321642T DE69321642D1 DE 69321642 D1 DE69321642 D1 DE 69321642D1 DE 69321642 T DE69321642 T DE 69321642T DE 69321642 T DE69321642 T DE 69321642T DE 69321642 D1 DE69321642 D1 DE 69321642D1
- Authority
- DE
- Germany
- Prior art keywords
- controlled thyristor
- mos controlled
- mos
- thyristor
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4114139A JPH0793425B2 (ja) | 1992-04-07 | 1992-04-07 | プレーナ構造のmos制御サイリスタ |
JP4129678A JPH0685433B2 (ja) | 1992-04-22 | 1992-04-22 | 縦型構造のmos制御サイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69321642D1 true DE69321642D1 (de) | 1998-11-26 |
DE69321642T2 DE69321642T2 (de) | 1999-03-18 |
Family
ID=26452968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69321642T Expired - Fee Related DE69321642T2 (de) | 1992-04-07 | 1993-04-07 | MOS-kontrollierter Thyristor |
Country Status (3)
Country | Link |
---|---|
US (1) | US5324966A (de) |
EP (1) | EP0565349B1 (de) |
DE (1) | DE69321642T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2987040B2 (ja) * | 1993-11-05 | 1999-12-06 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP3396553B2 (ja) * | 1994-02-04 | 2003-04-14 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
US5682044A (en) * | 1995-01-31 | 1997-10-28 | Takashige Tamamushi | Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure |
US5757037A (en) * | 1995-02-01 | 1998-05-26 | Silicon Power Corporation | Power thyristor with MOS gated turn-off and MOS-assised turn-on |
EP0736909A3 (de) * | 1995-04-05 | 1997-10-08 | Fuji Electric Co Ltd | Thyristor mit isoliertem Gate |
US6693310B1 (en) | 1995-07-19 | 2004-02-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP3850054B2 (ja) * | 1995-07-19 | 2006-11-29 | 三菱電機株式会社 | 半導体装置 |
JP3938964B2 (ja) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | 高耐圧半導体装置およびその製造方法 |
GB2327295A (en) * | 1997-07-11 | 1999-01-20 | Plessey Semiconductors Ltd | MOS controllable power semiconductor device |
US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
KR100275756B1 (ko) * | 1998-08-27 | 2000-12-15 | 김덕중 | 트렌치 절연 게이트 바이폴라 트랜지스터 |
JP2002532885A (ja) * | 1998-12-04 | 2002-10-02 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 出力半導体回路 |
US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
JP2001352079A (ja) * | 2000-06-07 | 2001-12-21 | Nec Corp | ダイオードおよびその製造方法 |
US6713791B2 (en) * | 2001-01-26 | 2004-03-30 | Ibm Corporation | T-RAM array having a planar cell structure and method for fabricating the same |
US6458632B1 (en) * | 2001-03-14 | 2002-10-01 | Chartered Semiconductor Manufacturing Ltd. | UMOS-like gate-controlled thyristor structure for ESD protection |
US7456439B1 (en) | 2001-03-22 | 2008-11-25 | T-Ram Semiconductor, Inc. | Vertical thyristor-based memory with trench isolation and its method of fabrication |
US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
US6965129B1 (en) | 2002-11-06 | 2005-11-15 | T-Ram, Inc. | Thyristor-based device having dual control ports |
US7781797B2 (en) * | 2006-06-29 | 2010-08-24 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
DE102007006827B3 (de) * | 2007-02-07 | 2008-03-06 | Oliver Bartels | Halbleiterschalter für Hochspannungen |
WO2008156070A1 (ja) * | 2007-06-18 | 2008-12-24 | Rohm Co., Ltd. | 半導体装置 |
US8035126B2 (en) * | 2007-10-29 | 2011-10-11 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
US8232579B2 (en) * | 2009-03-11 | 2012-07-31 | Infineon Technologies Austria Ag | Semiconductor device and method for producing a semiconductor device |
JP2013168564A (ja) * | 2012-02-16 | 2013-08-29 | Ngk Insulators Ltd | 半導体装置及びその製造方法 |
FR3001085A1 (fr) * | 2013-01-15 | 2014-07-18 | St Microelectronics Sa | Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement |
DE102017114289A1 (de) | 2017-06-27 | 2018-12-27 | Healthfactories GmbH | Halbleiterschalter für Hochspannungen mit neuartiger resonanter Übertragerkette |
CN109087946B (zh) * | 2018-08-27 | 2021-03-16 | 电子科技大学 | 一种沟槽栅mos控制晶闸管及其制作方法 |
CN111933715A (zh) * | 2020-09-25 | 2020-11-13 | 电子科技大学 | 一种碳化硅mosfet器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141959A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Electrostatic induction thyristor |
US5034785A (en) * | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
JP2673891B2 (ja) * | 1988-04-30 | 1997-11-05 | 財団法人 半導体研究振興会 | 静電誘導サイリスタの駆動回路 |
JPH06103745B2 (ja) * | 1989-10-06 | 1994-12-14 | 株式会社東芝 | 集積回路素子 |
GB2243021A (en) * | 1990-04-09 | 1991-10-16 | Philips Electronic Associated | Mos- gated thyristor |
JPH03292770A (ja) * | 1990-04-10 | 1991-12-24 | Semiconductor Res Found | 静電誘導サイリスタ |
JPH03292769A (ja) * | 1990-04-10 | 1991-12-24 | Semiconductor Res Found | 絶縁制御siサイリスタの製造方法 |
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
-
1993
- 1993-03-25 US US08/037,023 patent/US5324966A/en not_active Expired - Fee Related
- 1993-04-07 EP EP93302715A patent/EP0565349B1/de not_active Expired - Lifetime
- 1993-04-07 DE DE69321642T patent/DE69321642T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69321642T2 (de) | 1999-03-18 |
EP0565349A3 (de) | 1994-12-14 |
EP0565349B1 (de) | 1998-10-21 |
EP0565349A2 (de) | 1993-10-13 |
US5324966A (en) | 1994-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NGK INSULATORS, LTD., NAGOYA, AICHI, JP TAMAMUSHI, |
|
8339 | Ceased/non-payment of the annual fee |