DE69430774D1 - Rückwärts leitender Gate-Turnoff-Thyristor - Google Patents

Rückwärts leitender Gate-Turnoff-Thyristor

Info

Publication number
DE69430774D1
DE69430774D1 DE69430774T DE69430774T DE69430774D1 DE 69430774 D1 DE69430774 D1 DE 69430774D1 DE 69430774 T DE69430774 T DE 69430774T DE 69430774 T DE69430774 T DE 69430774T DE 69430774 D1 DE69430774 D1 DE 69430774D1
Authority
DE
Germany
Prior art keywords
reverse conducting
conducting gate
gate turnoff
turnoff thyristor
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430774T
Other languages
English (en)
Other versions
DE69430774T2 (de
Inventor
Kazuhiro Morishita
Futoshi Tokunoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69430774D1 publication Critical patent/DE69430774D1/de
Publication of DE69430774T2 publication Critical patent/DE69430774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69430774T 1993-03-25 1994-03-24 Rückwärts leitender Gate-Turnoff-Thyristor Expired - Fee Related DE69430774T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6676193 1993-03-25
JP6050715A JP2796057B2 (ja) 1993-03-25 1994-03-22 逆導通ゲートターンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE69430774D1 true DE69430774D1 (de) 2002-07-18
DE69430774T2 DE69430774T2 (de) 2002-11-21

Family

ID=26391169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430774T Expired - Fee Related DE69430774T2 (de) 1993-03-25 1994-03-24 Rückwärts leitender Gate-Turnoff-Thyristor

Country Status (4)

Country Link
US (1) US5428230A (de)
EP (1) EP0621643B1 (de)
JP (1) JP2796057B2 (de)
DE (1) DE69430774T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640656A1 (de) * 1996-10-02 1998-04-09 Asea Brown Boveri Rückwärtsleitender GTO
JP4416288B2 (ja) * 2000-07-27 2010-02-17 三菱電機株式会社 逆導通サイリスタ
JP2002208691A (ja) * 2001-01-11 2002-07-26 Ngk Insulators Ltd 逆導通機能を有する電力用半導体スイッチングデバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (de) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
JPS5383480A (en) * 1976-12-28 1978-07-22 Mitsubishi Electric Corp Semiconductor device
JPS6048911B2 (ja) * 1979-09-10 1985-10-30 富士電機株式会社 半導体装置
JPS56104467A (en) * 1980-01-23 1981-08-20 Nippon Telegr & Teleph Corp <Ntt> Reverse conducting thyristor
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
JPS6257250A (ja) * 1985-09-06 1987-03-12 Hitachi Ltd 半導体装置
JPH01253274A (ja) * 1988-04-01 1989-10-09 Fuji Electric Co Ltd 逆導通ｇｔｏサイリスタ
JP2802999B2 (ja) * 1989-03-15 1998-09-24 大日本印刷株式会社 カラー固体撮像素子の製造方法
JPH03174775A (ja) * 1989-04-04 1991-07-29 Fuji Electric Co Ltd 逆導通形ゲートターンオフサイリスタ
JP2547468B2 (ja) * 1990-06-12 1996-10-23 三菱電機株式会社 半導体装置およびその製造方法
US5281847A (en) * 1990-06-12 1994-01-25 Mitsubishi Denki Kabushik Kaisha Groove structure for isolating elements comprising a GTO structure

Also Published As

Publication number Publication date
JPH06334173A (ja) 1994-12-02
DE69430774T2 (de) 2002-11-21
US5428230A (en) 1995-06-27
EP0621643B1 (de) 2002-06-12
JP2796057B2 (ja) 1998-09-10
EP0621643A1 (de) 1994-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee