DE69032766T2 - Gate Turn-off-Thyristor - Google Patents

Gate Turn-off-Thyristor

Info

Publication number
DE69032766T2
DE69032766T2 DE1990632766 DE69032766T DE69032766T2 DE 69032766 T2 DE69032766 T2 DE 69032766T2 DE 1990632766 DE1990632766 DE 1990632766 DE 69032766 T DE69032766 T DE 69032766T DE 69032766 T2 DE69032766 T2 DE 69032766T2
Authority
DE
Germany
Prior art keywords
thyristor
gate turn
gate
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1990632766
Other languages
English (en)
Other versions
DE69032766D1 (de
Inventor
Shingo Odai
Shuroku Sakurada
Toshiyuki Ozeki
Yukimasa Sato
Tsutomu Yatsuo
Yoshiteru Shimizu
Isamu Sanpei
Kenji Yagishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1083939A external-priority patent/JPH0758777B2/ja
Priority claimed from JP1237119A external-priority patent/JP2764830B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69032766D1 publication Critical patent/DE69032766D1/de
Application granted granted Critical
Publication of DE69032766T2 publication Critical patent/DE69032766T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE1990632766 1989-04-04 1990-04-03 Gate Turn-off-Thyristor Expired - Fee Related DE69032766T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1083939A JPH0758777B2 (ja) 1989-04-04 1989-04-04 ゲートターンオフサイリスタ
JP1237119A JP2764830B2 (ja) 1989-09-14 1989-09-14 ゲートターンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE69032766D1 DE69032766D1 (de) 1998-12-24
DE69032766T2 true DE69032766T2 (de) 1999-06-24

Family

ID=26424976

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990632766 Expired - Fee Related DE69032766T2 (de) 1989-04-04 1990-04-03 Gate Turn-off-Thyristor

Country Status (2)

Country Link
EP (1) EP0391337B1 (de)
DE (1) DE69032766T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2782638B2 (ja) * 1990-12-28 1998-08-06 富士電機株式会社 Ｍｏｓコントロールサイリスタ
SE470226B (sv) * 1991-07-01 1993-12-06 Asea Brown Boveri GTO-tyristor jämte förfarande för framställning av en GTO- tyristor
DE4431294A1 (de) * 1994-09-02 1996-03-07 Abb Management Ag Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
EP0833389B1 (de) * 1996-09-30 2008-03-05 Infineon Technologies AG GTO-Thyristor
DE102004042163B4 (de) * 2004-08-31 2006-06-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Asymmetrischer Thyristor mit integriertem Freiwerdeschutz
CN111293113B (zh) * 2020-02-21 2023-01-10 电子科技大学 采用单层金属工艺的sgto器件及其版图结构、制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
JPH061831B2 (ja) * 1986-07-08 1994-01-05 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
FR2638022B1 (fr) * 1988-10-14 1992-08-28 Sgs Thomson Microelectronics Thyristor asymetrique a extinction par la gachette, muni de courts-circuits d'anode et presentant un courant de declenchement reduit

Also Published As

Publication number Publication date
DE69032766D1 (de) 1998-12-24
EP0391337A3 (de) 1991-04-24
EP0391337A2 (de) 1990-10-10
EP0391337B1 (de) 1998-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee