DE69500782D1 - Thyristor mit isoliertem Gate - Google Patents

Thyristor mit isoliertem Gate

Info

Publication number
DE69500782D1
DE69500782D1 DE69500782T DE69500782T DE69500782D1 DE 69500782 D1 DE69500782 D1 DE 69500782D1 DE 69500782 T DE69500782 T DE 69500782T DE 69500782 T DE69500782 T DE 69500782T DE 69500782 D1 DE69500782 D1 DE 69500782D1
Authority
DE
Germany
Prior art keywords
insulated gate
gate thyristor
thyristor
insulated
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500782T
Other languages
English (en)
Other versions
DE69500782T2 (de
Inventor
Noriyuki Iwamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69500782D1 publication Critical patent/DE69500782D1/de
Application granted granted Critical
Publication of DE69500782T2 publication Critical patent/DE69500782T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69500782T 1994-04-01 1995-03-30 Thyristor mit isoliertem Gate Expired - Fee Related DE69500782T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6429394 1994-04-01
JP13676694 1994-06-20
JP00534895A JP3180875B2 (ja) 1994-04-01 1995-01-18 絶縁ゲート型サイリスタ

Publications (2)

Publication Number Publication Date
DE69500782D1 true DE69500782D1 (de) 1997-11-06
DE69500782T2 DE69500782T2 (de) 1998-02-26

Family

ID=27276714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500782T Expired - Fee Related DE69500782T2 (de) 1994-04-01 1995-03-30 Thyristor mit isoliertem Gate

Country Status (4)

Country Link
US (1) US5614738A (de)
EP (1) EP0675545B1 (de)
JP (1) JP3180875B2 (de)
DE (1) DE69500782T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274306A (ja) * 1995-04-03 1996-10-18 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
DE19718432A1 (de) * 1996-05-09 1997-11-13 Fuji Electric Co Ltd Thyristor mit isoliertem Gate
DE19638769C1 (de) * 1996-09-21 1998-03-05 Daimler Benz Ag Emittergesteuerter Thyristor
US20030122149A1 (en) * 1998-04-15 2003-07-03 Junichi Sakano Complex semiconductor device and electric power conversion appratus using it
JP2002532885A (ja) * 1998-12-04 2002-10-02 インフィネオン テクノロジース アクチエンゲゼルシャフト 出力半導体回路
US9780202B2 (en) 2015-08-31 2017-10-03 Ixys Corporation Trench IGBT with waved floating P-well electron injection
US9780168B2 (en) 2015-08-31 2017-10-03 Ixys Corporation IGBT with waved floating P-well electron injection
US10367085B2 (en) 2015-08-31 2019-07-30 Littelfuse, Inc. IGBT with waved floating P-Well electron injection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
JPS6380572A (ja) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd 伝導度変調型たて型ｍｏｓ−ｆｅｔ
US4847671A (en) * 1987-05-19 1989-07-11 General Electric Company Monolithically integrated insulated gate semiconductor device
US4912541A (en) * 1987-05-19 1990-03-27 General Electric Company Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
US4857983A (en) * 1987-05-19 1989-08-15 General Electric Company Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
US4888627A (en) * 1987-05-19 1989-12-19 General Electric Company Monolithically integrated lateral insulated gate semiconductor device
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
EP0389862A3 (de) * 1989-03-29 1990-12-19 Siemens Aktiengesellschaft Abschaltbarer Thyristor
US5327002A (en) * 1991-05-15 1994-07-05 Kawasaki Steel Corporation SRAM with gate oxide films of varied thickness
US5232865A (en) * 1991-07-24 1993-08-03 Micron Technology, Inc. Method of fabricating vertically integrated oxygen-implanted polysilicon resistor
US5319222A (en) * 1992-04-29 1994-06-07 North Carolina State University MOS gated thyristor having on-state current saturation capability
US5317171A (en) * 1992-04-29 1994-05-31 North Carolina State University MOS gated thyristor with remote turn-off electrode
US5400277A (en) * 1993-10-29 1995-03-21 Vlsi Technology, Inc. Semiconductor on insulator static random access meory cell utilizing polysilicon resistors formed in trenches

Also Published As

Publication number Publication date
JPH0870116A (ja) 1996-03-12
EP0675545B1 (de) 1997-10-01
DE69500782T2 (de) 1998-02-26
US5614738A (en) 1997-03-25
JP3180875B2 (ja) 2001-06-25
EP0675545A3 (de) 1996-07-10
EP0675545A2 (de) 1995-10-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee