DE69534458D1 - Gate-Turn-off-Thyristor - Google Patents

Gate-Turn-off-Thyristor

Info

Publication number
DE69534458D1
DE69534458D1 DE69534458T DE69534458T DE69534458D1 DE 69534458 D1 DE69534458 D1 DE 69534458D1 DE 69534458 T DE69534458 T DE 69534458T DE 69534458 T DE69534458 T DE 69534458T DE 69534458 D1 DE69534458 D1 DE 69534458D1
Authority
DE
Germany
Prior art keywords
thyristor
gate turn
gate
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69534458T
Other languages
English (en)
Inventor
Nozomu Sennenbara
Kouji Niinobu
Kazuhiko Niwayama
Futoshi Tokunoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69534458D1 publication Critical patent/DE69534458D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
DE69534458T 1994-04-04 1995-03-24 Gate-Turn-off-Thyristor Expired - Lifetime DE69534458D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6594994A JP3241526B2 (ja) 1994-04-04 1994-04-04 ゲートターンオフサイリスタおよびその製造方法

Publications (1)

Publication Number Publication Date
DE69534458D1 true DE69534458D1 (de) 2006-02-02

Family

ID=13301744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69534458T Expired - Lifetime DE69534458D1 (de) 1994-04-04 1995-03-24 Gate-Turn-off-Thyristor

Country Status (4)

Country Link
US (1) US5574297A (de)
EP (1) EP0676813B1 (de)
JP (1) JP3241526B2 (de)
DE (1) DE69534458D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0863553B1 (de) * 1996-09-24 2003-02-19 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung und verfahren zur herstellung
EP1065729A4 (de) * 1999-01-18 2004-05-26 Mitsubishi Electric Corp Kompressionsgebondeter halbleiter
US8586423B2 (en) 2011-06-24 2013-11-19 International Business Machines Corporation Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
CN112909070A (zh) * 2021-02-10 2021-06-04 锦州市圣合科技电子有限责任公司 超大电流高di/dt晶闸管管芯结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS60226179A (ja) * 1984-04-25 1985-11-11 Toyo Electric Mfg Co Ltd サイリスタの短絡構造
DE3750743T2 (de) * 1986-12-01 1995-03-16 Toshiba Kawasaki Kk Halbleiter-Schaltanordnung mit einer Anodenkurzschlussstruktur.
JPH01171272A (ja) * 1987-12-25 1989-07-06 Fuji Electric Co Ltd ゲートターンオフサイリスタ
JPH0642542B2 (ja) * 1988-04-08 1994-06-01 株式会社東芝 高耐圧半導体装置の製造方法
EP0366916B1 (de) * 1988-10-04 1995-06-14 Kabushiki Kaisha Toshiba Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung
FR2638022B1 (fr) * 1988-10-14 1992-08-28 Sgs Thomson Microelectronics Thyristor asymetrique a extinction par la gachette, muni de courts-circuits d'anode et presentant un courant de declenchement reduit
DE3917769A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Thyristor mit emitter-nebenschluessen
EP0556739B1 (de) * 1992-02-20 1998-07-08 Hitachi, Ltd. Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern

Also Published As

Publication number Publication date
EP0676813A3 (de) 1999-06-02
US5574297A (en) 1996-11-12
JPH07283394A (ja) 1995-10-27
EP0676813B1 (de) 2005-09-21
EP0676813A2 (de) 1995-10-11
JP3241526B2 (ja) 2001-12-25

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Legal Events

Date Code Title Description
8332 No legal effect for de