DE59711264D1 - Thyristor mit durchbruchbereich - Google Patents
Thyristor mit durchbruchbereichInfo
- Publication number
- DE59711264D1 DE59711264D1 DE59711264T DE59711264T DE59711264D1 DE 59711264 D1 DE59711264 D1 DE 59711264D1 DE 59711264 T DE59711264 T DE 59711264T DE 59711264 T DE59711264 T DE 59711264T DE 59711264 D1 DE59711264 D1 DE 59711264D1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- breakthrough area
- breakthrough
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19640313 | 1996-09-30 | ||
DE19650762A DE19650762A1 (de) | 1996-09-30 | 1996-12-06 | Thyristor mit Durchbruchbereich |
PCT/DE1997/002237 WO1998015010A1 (de) | 1996-09-30 | 1997-09-29 | Thyristor mit durchbruchbereich |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59711264D1 true DE59711264D1 (de) | 2004-03-04 |
Family
ID=7807454
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19650762A Ceased DE19650762A1 (de) | 1996-09-30 | 1996-12-06 | Thyristor mit Durchbruchbereich |
DE59711264T Expired - Lifetime DE59711264D1 (de) | 1996-09-30 | 1997-09-29 | Thyristor mit durchbruchbereich |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19650762A Ceased DE19650762A1 (de) | 1996-09-30 | 1996-12-06 | Thyristor mit Durchbruchbereich |
Country Status (1)
Country | Link |
---|---|
DE (2) | DE19650762A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE50015361D1 (de) | 1999-02-22 | 2008-10-30 | Infineon Technologies Ag | Verfahren zum einstellen der durchbruchspannung eines thyristors |
WO2000075963A2 (de) * | 1999-06-08 | 2000-12-14 | Siemens Aktiengesellschaft | Thyristor mit integriertem freiwerdezeitschutz und herstellungsverfahren dafür |
DE19947036C1 (de) * | 1999-09-30 | 2001-05-17 | Siemens Ag | Thyristoranordnung mit Freiwerdeschutz |
DE19947028A1 (de) | 1999-09-30 | 2001-04-12 | Siemens Ag | Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit |
DE10135983B4 (de) * | 2001-07-24 | 2005-05-04 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Lichtzündbarer Thyristor |
DE10135984B4 (de) * | 2001-07-24 | 2005-04-21 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Anordnung mit einem lichtzündbaren Halbleiterbauelement und einem Teil zur Lichtdurchführung |
DE10150640B4 (de) * | 2001-10-12 | 2005-02-10 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Thyristor mit integriertem Überkopfzündschutz und Verfahren zu seiner Herstellung |
DE10231199A1 (de) * | 2002-07-10 | 2004-02-05 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Halbleiterbauelement |
DE10344592B4 (de) * | 2003-09-25 | 2006-01-12 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zum Einstellen der Durchbruchspannung eines Thyristors mit einer Durchbruchsstruktur |
DE102004025082B4 (de) * | 2004-05-21 | 2006-12-28 | Infineon Technologies Ag | Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung |
DE102005023479B4 (de) * | 2005-05-20 | 2011-06-09 | Infineon Technologies Ag | Thyristor mit Zündstufenstruktur |
DE102021106536A1 (de) | 2021-02-12 | 2022-08-18 | Infineon Technologies Bipolar Gmbh & Co. Kg | Leistungshalbleiterbauelement zur Spannungsbegrenzung, Anordnung aus zwei Leistungshalbleiterbauelementen sowie Verfahren zur Spannungsbegrenzung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
EP0343369A1 (de) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Thyristors |
US5243205A (en) * | 1989-10-16 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device with overvoltage protective function |
DE4215378C1 (de) * | 1992-05-11 | 1993-09-30 | Siemens Ag | Thyristor mit Durchbruchbereich |
-
1996
- 1996-12-06 DE DE19650762A patent/DE19650762A1/de not_active Ceased
-
1997
- 1997-09-29 DE DE59711264T patent/DE59711264D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19650762A1 (de) | 1998-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: EUPEC EUROPAEISCHE GESELLSCHAFT FUER LEISTUNGSHALBLE |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE |