DE69400249T2 - MOS-kontrollierter Thyristor - Google Patents

MOS-kontrollierter Thyristor

Info

Publication number
DE69400249T2
DE69400249T2 DE69400249T DE69400249T DE69400249T2 DE 69400249 T2 DE69400249 T2 DE 69400249T2 DE 69400249 T DE69400249 T DE 69400249T DE 69400249 T DE69400249 T DE 69400249T DE 69400249 T2 DE69400249 T2 DE 69400249T2
Authority
DE
Germany
Prior art keywords
controlled thyristor
mos controlled
mos
thyristor
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69400249T
Other languages
English (en)
Other versions
DE69400249D1 (de
Inventor
Hidetoshi Nakanishi
Yasunori Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69400249D1 publication Critical patent/DE69400249D1/de
Application granted granted Critical
Publication of DE69400249T2 publication Critical patent/DE69400249T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69400249T 1993-03-01 1994-03-01 MOS-kontrollierter Thyristor Expired - Fee Related DE69400249T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5039949A JP2818348B2 (ja) 1993-03-01 1993-03-01 半導体装置

Publications (2)

Publication Number Publication Date
DE69400249D1 DE69400249D1 (de) 1996-07-25
DE69400249T2 true DE69400249T2 (de) 1997-01-09

Family

ID=12567221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400249T Expired - Fee Related DE69400249T2 (de) 1993-03-01 1994-03-01 MOS-kontrollierter Thyristor

Country Status (5)

Country Link
US (1) US5489789A (de)
EP (1) EP0614228B1 (de)
JP (1) JP2818348B2 (de)
KR (1) KR0135589B1 (de)
DE (1) DE69400249T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3183020B2 (ja) * 1994-03-17 2001-07-03 株式会社日立製作所 保護回路を内蔵した絶縁ゲート型半導体装置
EP0736909A3 (de) * 1995-04-05 1997-10-08 Fuji Electric Co Ltd Thyristor mit isoliertem Gate
US5844259A (en) * 1996-03-19 1998-12-01 International Rectifier Corporation Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting
US6800779B2 (en) * 2001-03-30 2004-10-05 General Electric Company Method for producing aromatic carbonates

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
JPH0624244B2 (ja) * 1987-06-12 1994-03-30 株式会社日立製作所 複合半導体装置
US5095343A (en) * 1989-06-14 1992-03-10 Harris Corporation Power MOSFET
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
JPH0795597B2 (ja) * 1990-08-18 1995-10-11 三菱電機株式会社 サイリスタおよびその製造方法
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
EP0507974B1 (de) * 1991-04-11 1995-12-20 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement

Also Published As

Publication number Publication date
JP2818348B2 (ja) 1998-10-30
EP0614228A1 (de) 1994-09-07
EP0614228B1 (de) 1996-06-19
US5489789A (en) 1996-02-06
KR940022888A (ko) 1994-10-21
DE69400249D1 (de) 1996-07-25
KR0135589B1 (ko) 1998-04-22
JPH06252386A (ja) 1994-09-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee