DE69031813D1 - HEMT-Struktur - Google Patents

HEMT-Struktur

Info

Publication number
DE69031813D1
DE69031813D1 DE69031813T DE69031813T DE69031813D1 DE 69031813 D1 DE69031813 D1 DE 69031813D1 DE 69031813 T DE69031813 T DE 69031813T DE 69031813 T DE69031813 T DE 69031813T DE 69031813 D1 DE69031813 D1 DE 69031813D1
Authority
DE
Germany
Prior art keywords
hemt structure
hemt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031813T
Other languages
English (en)
Other versions
DE69031813T2 (de
Inventor
Erhard Prof Dr Kohn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of DE69031813D1 publication Critical patent/DE69031813D1/de
Publication of DE69031813T2 publication Critical patent/DE69031813T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69031813T 1989-04-04 1990-04-04 HEMT-Struktur Expired - Fee Related DE69031813T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33320789A 1989-04-04 1989-04-04

Publications (2)

Publication Number Publication Date
DE69031813D1 true DE69031813D1 (de) 1998-01-29
DE69031813T2 DE69031813T2 (de) 1998-04-09

Family

ID=23301801

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031813T Expired - Fee Related DE69031813T2 (de) 1989-04-04 1990-04-04 HEMT-Struktur

Country Status (3)

Country Link
US (1) US5393990A (de)
EP (1) EP0391380B1 (de)
DE (1) DE69031813T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3368452B2 (ja) * 1995-04-25 2003-01-20 富士通株式会社 化合物半導体装置及びその製造方法
JPH0936133A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
SE9503630D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A semiconductor device having a heterojunction
US5668387A (en) * 1995-10-26 1997-09-16 Trw Inc. Relaxed channel high electron mobility transistor
US5847414A (en) * 1995-10-30 1998-12-08 Abb Research Limited Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
US6462361B1 (en) * 1995-12-27 2002-10-08 Showa Denko K.K. GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure
JP2005527102A (ja) * 2001-07-24 2005-09-08 クリー　インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
US6884704B2 (en) * 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US6897137B2 (en) * 2002-08-05 2005-05-24 Hrl Laboratories, Llc Process for fabricating ultra-low contact resistances in GaN-based devices
US7692263B2 (en) * 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8878245B2 (en) * 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
US4600932A (en) * 1984-10-12 1986-07-15 Gte Laboratories Incorporated Enhanced mobility buried channel transistor structure
JPS61198784A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd 電界効果型半導体装置
JPS62264672A (ja) * 1986-05-13 1987-11-17 Fujitsu Ltd 半導体装置
FR2620268A1 (fr) * 1987-09-03 1989-03-10 Centre Nat Rech Scient Procede de dopage d'une couche semi-conductrice et transistor obtenu par ce procede
JPH01107578A (ja) * 1987-09-25 1989-04-25 Siemens Ag 高電子移動度電界効果トランジスタ

Also Published As

Publication number Publication date
DE69031813T2 (de) 1998-04-09
US5393990A (en) 1995-02-28
EP0391380B1 (de) 1997-12-17
EP0391380A3 (de) 1991-05-15
EP0391380A2 (de) 1990-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee