DE69030074D1 - Supraleitender Gatter-Feld-Effekt-Transistor - Google Patents

Supraleitender Gatter-Feld-Effekt-Transistor

Info

Publication number
DE69030074D1
DE69030074D1 DE69030074T DE69030074T DE69030074D1 DE 69030074 D1 DE69030074 D1 DE 69030074D1 DE 69030074 T DE69030074 T DE 69030074T DE 69030074 T DE69030074 T DE 69030074T DE 69030074 D1 DE69030074 D1 DE 69030074D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
gate field
superconducting gate
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030074T
Other languages
English (en)
Other versions
DE69030074T2 (de
Inventor
Praveen Chaudhari
Richard Joseph Gambino
Roger Hilsen Koch
Robert Benjamin Laibowitz
Eti Ganin
George Anthony Sai-Halasz
Lia Krusin-Elbaum
Yuan-Chen Sun
Matthew Robert Wordeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69030074D1 publication Critical patent/DE69030074D1/de
Application granted granted Critical
Publication of DE69030074T2 publication Critical patent/DE69030074T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE1990630074 1990-02-01 1990-12-13 Supraleitender Gatter-Feld-Effekt-Transistor Expired - Fee Related DE69030074T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47329290A 1990-02-01 1990-02-01

Publications (2)

Publication Number Publication Date
DE69030074D1 true DE69030074D1 (de) 1997-04-10
DE69030074T2 DE69030074T2 (de) 1997-09-18

Family

ID=23878966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990630074 Expired - Fee Related DE69030074T2 (de) 1990-02-01 1990-12-13 Supraleitender Gatter-Feld-Effekt-Transistor

Country Status (3)

Country Link
EP (1) EP0439751B1 (de)
JP (1) JPH077838B2 (de)
DE (1) DE69030074T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908813A (en) * 1997-02-14 1999-06-01 Micron Technology, Inc. Method making integrated circuit metallization with superconductor BEOL wiring
US7241691B2 (en) * 2005-03-28 2007-07-10 Freescale Semiconductor, Inc. Conducting metal oxide with additive as p-MOS device electrode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474758A (en) * 1987-09-17 1989-03-20 Fujitsu Ltd Insulated gate field-effect transistor
JPH07109906B2 (ja) * 1988-03-03 1995-11-22 松下電器産業株式会社 超伝導トランジスタ回路

Also Published As

Publication number Publication date
JPH077838B2 (ja) 1995-01-30
EP0439751A3 (en) 1991-11-21
DE69030074T2 (de) 1997-09-18
JPH04251977A (ja) 1992-09-08
EP0439751A2 (de) 1991-08-07
EP0439751B1 (de) 1997-03-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee