DE68926629T2 - Supraleitender Transistor - Google Patents

Supraleitender Transistor

Info

Publication number
DE68926629T2
DE68926629T2 DE68926629T DE68926629T DE68926629T2 DE 68926629 T2 DE68926629 T2 DE 68926629T2 DE 68926629 T DE68926629 T DE 68926629T DE 68926629 T DE68926629 T DE 68926629T DE 68926629 T2 DE68926629 T2 DE 68926629T2
Authority
DE
Germany
Prior art keywords
superconducting transistor
superconducting
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926629T
Other languages
English (en)
Other versions
DE68926629D1 (de
Inventor
Takahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE68926629D1 publication Critical patent/DE68926629D1/de
Publication of DE68926629T2 publication Critical patent/DE68926629T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
DE68926629T 1988-03-03 1989-03-03 Supraleitender Transistor Expired - Fee Related DE68926629T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63049981A JPH07109906B2 (ja) 1988-03-03 1988-03-03 超伝導トランジスタ回路

Publications (2)

Publication Number Publication Date
DE68926629D1 DE68926629D1 (de) 1996-07-18
DE68926629T2 true DE68926629T2 (de) 1997-01-02

Family

ID=12846194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926629T Expired - Fee Related DE68926629T2 (de) 1988-03-03 1989-03-03 Supraleitender Transistor

Country Status (4)

Country Link
US (1) US4999337A (de)
EP (1) EP0331527B1 (de)
JP (1) JPH07109906B2 (de)
DE (1) DE68926629T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6774463B1 (en) * 1990-02-01 2004-08-10 International Business Machines Corporation Superconductor gate semiconductor channel field effect transistor
DE69030074T2 (de) * 1990-02-01 1997-09-18 Ibm Supraleitender Gatter-Feld-Effekt-Transistor
JP2586370B2 (ja) * 1992-10-30 1997-02-26 株式会社日立製作所 超電導トランジスタ装置
US20080135832A1 (en) * 2005-01-18 2008-06-12 Shye Shapira Apparatus And Method For Control Of Tunneling In A Small-Scale Electronic Structure
KR20210003089A (ko) * 2018-03-09 2021-01-11 인디안 인스티투트 오브 싸이언스 초전도 블록, 초전도 나노결정, 초전도 장치 및 이의 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490860B1 (fr) * 1980-09-24 1986-11-28 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
EP0147482B1 (de) * 1983-12-28 1987-08-19 International Business Machines Corporation Tunneltransistor für niedrige Temperaturen
DE3588114T2 (de) * 1984-04-19 1997-02-06 Hitachi Ltd Supraleitende Anordnung
JPH069262B2 (ja) * 1984-09-21 1994-02-02 株式会社日立製作所 超電導デバイス
DE3588086T2 (de) * 1984-11-05 1996-09-19 Hitachi Ltd Supraleiteranordnung
DE3477624D1 (en) * 1984-12-18 1989-05-11 Ibm Low temperature tunneling transistor
JPH0770705B2 (ja) * 1986-06-19 1995-07-31 富士通株式会社 高速半導体装置
JPH065745B2 (ja) * 1986-07-31 1994-01-19 株式会社日立製作所 半導体装置
EP0257474A3 (de) * 1986-08-13 1989-02-15 Hitachi, Ltd. Supraleitendes Bauelement

Also Published As

Publication number Publication date
US4999337A (en) 1991-03-12
EP0331527A3 (en) 1990-02-07
JPH01223782A (ja) 1989-09-06
EP0331527B1 (de) 1996-06-12
DE68926629D1 (de) 1996-07-18
EP0331527A2 (de) 1989-09-06
JPH07109906B2 (ja) 1995-11-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee