FR2490860B1 - Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit - Google Patents
Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuitInfo
- Publication number
- FR2490860B1 FR2490860B1 FR8116811A FR8116811A FR2490860B1 FR 2490860 B1 FR2490860 B1 FR 2490860B1 FR 8116811 A FR8116811 A FR 8116811A FR 8116811 A FR8116811 A FR 8116811A FR 2490860 B1 FR2490860 B1 FR 2490860B1
- Authority
- FR
- France
- Prior art keywords
- reading
- short
- junction type
- programmable storage
- storage semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13326080A JPS5758354A (en) | 1980-09-24 | 1980-09-24 | Semiconductor device |
JP55162565A JPS5834948B2 (ja) | 1980-11-20 | 1980-11-20 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2490860A1 FR2490860A1 (fr) | 1982-03-26 |
FR2490860B1 true FR2490860B1 (fr) | 1986-11-28 |
Family
ID=26467656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8116811A Expired FR2490860B1 (fr) | 1980-09-24 | 1981-09-04 | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
Country Status (6)
Country | Link |
---|---|
US (1) | US4538167A (fr) |
CA (1) | CA1177957A (fr) |
DE (1) | DE3137730C2 (fr) |
FR (1) | FR2490860B1 (fr) |
GB (1) | GB2086653B (fr) |
NL (1) | NL189163C (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
JPS63312674A (ja) * | 1987-06-16 | 1988-12-21 | Nissan Motor Co Ltd | 薄膜半導体装置 |
DE3855533T2 (de) * | 1987-12-28 | 1997-01-23 | Fuji Electric Co Ltd | Halbleiteranordnung mit isoliertem Gate |
JPH01187837A (ja) * | 1988-01-22 | 1989-07-27 | Agency Of Ind Science & Technol | 半導体集積回路 |
JPH07109906B2 (ja) * | 1988-03-03 | 1995-11-22 | 松下電器産業株式会社 | 超伝導トランジスタ回路 |
US5773151A (en) * | 1995-06-30 | 1998-06-30 | Harris Corporation | Semi-insulating wafer |
US5793094A (en) * | 1995-12-28 | 1998-08-11 | Vlsi Technology, Inc. | Methods for fabricating anti-fuse structures |
US5789795A (en) * | 1995-12-28 | 1998-08-04 | Vlsi Technology, Inc. | Methods and apparatus for fabricationg anti-fuse devices |
US5783467A (en) * | 1995-12-29 | 1998-07-21 | Vlsi Technology, Inc. | Method of making antifuse structures using implantation of both neutral and dopant species |
US5723358A (en) * | 1996-04-29 | 1998-03-03 | Vlsi Technology, Inc. | Method of manufacturing amorphous silicon antifuse structures |
US5847441A (en) * | 1996-05-10 | 1998-12-08 | Micron Technology, Inc. | Semiconductor junction antifuse circuit |
US5899707A (en) * | 1996-08-20 | 1999-05-04 | Vlsi Technology, Inc. | Method for making doped antifuse structures |
US5753540A (en) * | 1996-08-20 | 1998-05-19 | Vlsi Technology, Inc. | Apparatus and method for programming antifuse structures |
US5764563A (en) * | 1996-09-30 | 1998-06-09 | Vlsi Technology, Inc. | Thin film load structure |
US7145255B2 (en) * | 2004-08-26 | 2006-12-05 | Micrel, Incorporated | Lateral programmable polysilicon structure incorporating polysilicon blocking diode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1524879A1 (de) * | 1967-11-09 | 1970-11-26 | Ibm Deutschland | Festwertspeicher fuer Datenverarbeitungsanlagen |
DE2023219C3 (de) * | 1970-05-12 | 1979-09-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Programmierbarer Halbleiter-Festwertspeicher |
US3848238A (en) * | 1970-07-13 | 1974-11-12 | Intersil Inc | Double junction read only memory |
US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
DE2531846C2 (de) * | 1974-07-16 | 1989-12-14 | Nippon Electric Co., Ltd., Tokyo | Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor |
FR2334170A1 (fr) * | 1975-12-05 | 1977-07-01 | Honeywell Bull Soc Ind | Memoire morte integree |
US4037140A (en) * | 1976-04-14 | 1977-07-19 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors (IGFETS) |
US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
FR2404895A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Cellule de memoire programmable a diodes semiconductrices |
CA1135854A (fr) * | 1977-09-30 | 1982-11-16 | Michel Moussie | Cellule de memoire morte programmable |
JPS607388B2 (ja) * | 1978-09-08 | 1985-02-23 | 富士通株式会社 | 半導体記憶装置 |
JPS55140265A (en) * | 1979-04-13 | 1980-11-01 | Fujitsu Ltd | Semiconductor memory device and method of fabricating the same |
-
1981
- 1981-09-04 FR FR8116811A patent/FR2490860B1/fr not_active Expired
- 1981-09-08 US US06/300,345 patent/US4538167A/en not_active Expired - Lifetime
- 1981-09-10 CA CA000385573A patent/CA1177957A/fr not_active Expired
- 1981-09-16 GB GB8128004A patent/GB2086653B/en not_active Expired
- 1981-09-22 DE DE3137730A patent/DE3137730C2/de not_active Expired
- 1981-09-23 NL NLAANVRAGE8104364,A patent/NL189163C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL189163B (nl) | 1992-08-17 |
GB2086653A (en) | 1982-05-12 |
FR2490860A1 (fr) | 1982-03-26 |
DE3137730C2 (de) | 1986-02-13 |
CA1177957A (fr) | 1984-11-13 |
NL189163C (nl) | 1993-01-18 |
NL8104364A (nl) | 1982-04-16 |
DE3137730A1 (de) | 1982-04-29 |
US4538167A (en) | 1985-08-27 |
GB2086653B (en) | 1984-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address |