FR2490860B1 - Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit - Google Patents

Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit

Info

Publication number
FR2490860B1
FR2490860B1 FR8116811A FR8116811A FR2490860B1 FR 2490860 B1 FR2490860 B1 FR 2490860B1 FR 8116811 A FR8116811 A FR 8116811A FR 8116811 A FR8116811 A FR 8116811A FR 2490860 B1 FR2490860 B1 FR 2490860B1
Authority
FR
France
Prior art keywords
reading
short
junction type
programmable storage
storage semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8116811A
Other languages
English (en)
Other versions
FR2490860A1 (fr
Inventor
Hideo Yoshino
Eisuke Arai
Kazuhide Kiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13326080A external-priority patent/JPS5758354A/ja
Priority claimed from JP55162565A external-priority patent/JPS5834948B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2490860A1 publication Critical patent/FR2490860A1/fr
Application granted granted Critical
Publication of FR2490860B1 publication Critical patent/FR2490860B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
FR8116811A 1980-09-24 1981-09-04 Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit Expired FR2490860B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13326080A JPS5758354A (en) 1980-09-24 1980-09-24 Semiconductor device
JP55162565A JPS5834948B2 (ja) 1980-11-20 1980-11-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
FR2490860A1 FR2490860A1 (fr) 1982-03-26
FR2490860B1 true FR2490860B1 (fr) 1986-11-28

Family

ID=26467656

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8116811A Expired FR2490860B1 (fr) 1980-09-24 1981-09-04 Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit

Country Status (6)

Country Link
US (1) US4538167A (fr)
CA (1) CA1177957A (fr)
DE (1) DE3137730C2 (fr)
FR (1) FR2490860B1 (fr)
GB (1) GB2086653B (fr)
NL (1) NL189163C (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
DE3855533T2 (de) * 1987-12-28 1997-01-23 Fuji Electric Co Ltd Halbleiteranordnung mit isoliertem Gate
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
JPH07109906B2 (ja) * 1988-03-03 1995-11-22 松下電器産業株式会社 超伝導トランジスタ回路
US5773151A (en) * 1995-06-30 1998-06-30 Harris Corporation Semi-insulating wafer
US5793094A (en) * 1995-12-28 1998-08-11 Vlsi Technology, Inc. Methods for fabricating anti-fuse structures
US5789795A (en) * 1995-12-28 1998-08-04 Vlsi Technology, Inc. Methods and apparatus for fabricationg anti-fuse devices
US5783467A (en) * 1995-12-29 1998-07-21 Vlsi Technology, Inc. Method of making antifuse structures using implantation of both neutral and dopant species
US5723358A (en) * 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
US5847441A (en) * 1996-05-10 1998-12-08 Micron Technology, Inc. Semiconductor junction antifuse circuit
US5899707A (en) * 1996-08-20 1999-05-04 Vlsi Technology, Inc. Method for making doped antifuse structures
US5753540A (en) * 1996-08-20 1998-05-19 Vlsi Technology, Inc. Apparatus and method for programming antifuse structures
US5764563A (en) * 1996-09-30 1998-06-09 Vlsi Technology, Inc. Thin film load structure
US7145255B2 (en) * 2004-08-26 2006-12-05 Micrel, Incorporated Lateral programmable polysilicon structure incorporating polysilicon blocking diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1524879A1 (de) * 1967-11-09 1970-11-26 Ibm Deutschland Festwertspeicher fuer Datenverarbeitungsanlagen
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
US3848238A (en) * 1970-07-13 1974-11-12 Intersil Inc Double junction read only memory
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
FR2334170A1 (fr) * 1975-12-05 1977-07-01 Honeywell Bull Soc Ind Memoire morte integree
US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
CA1135854A (fr) * 1977-09-30 1982-11-16 Michel Moussie Cellule de memoire morte programmable
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
JPS55140265A (en) * 1979-04-13 1980-11-01 Fujitsu Ltd Semiconductor memory device and method of fabricating the same

Also Published As

Publication number Publication date
DE3137730C2 (de) 1986-02-13
NL8104364A (nl) 1982-04-16
US4538167A (en) 1985-08-27
CA1177957A (fr) 1984-11-13
GB2086653B (en) 1984-07-18
NL189163C (nl) 1993-01-18
NL189163B (nl) 1992-08-17
GB2086653A (en) 1982-05-12
DE3137730A1 (de) 1982-04-29
FR2490860A1 (fr) 1982-03-26

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Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address