DE3177199D1 - Speichervorrichtung mit leseverstaerker. - Google Patents

Speichervorrichtung mit leseverstaerker.

Info

Publication number
DE3177199D1
DE3177199D1 DE8686201858T DE3177199T DE3177199D1 DE 3177199 D1 DE3177199 D1 DE 3177199D1 DE 8686201858 T DE8686201858 T DE 8686201858T DE 3177199 T DE3177199 T DE 3177199T DE 3177199 D1 DE3177199 D1 DE 3177199D1
Authority
DE
Germany
Prior art keywords
memory device
reading amplifier
amplifier
reading
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686201858T
Other languages
English (en)
Inventor
Iwahashi Hiroshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3177199D1 publication Critical patent/DE3177199D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
DE8686201858T 1980-09-25 1981-09-16 Speichervorrichtung mit leseverstaerker. Expired - Lifetime DE3177199D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55133559A JPS5856198B2 (ja) 1980-09-25 1980-09-25 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3177199D1 true DE3177199D1 (de) 1990-08-16

Family

ID=15107631

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8686201858T Expired - Lifetime DE3177199D1 (de) 1980-09-25 1981-09-16 Speichervorrichtung mit leseverstaerker.
DE8181304262T Expired DE3176940D1 (en) 1980-09-25 1981-09-16 A memory device including a sense amplifier

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8181304262T Expired DE3176940D1 (en) 1980-09-25 1981-09-16 A memory device including a sense amplifier

Country Status (4)

Country Link
US (1) US4445203A (de)
EP (2) EP0053428B1 (de)
JP (1) JPS5856198B2 (de)
DE (2) DE3177199D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435658A (en) * 1981-02-17 1984-03-06 Burroughs Corporation Two-level threshold circuitry for large scale integrated circuit memories
JPS5835783A (ja) * 1981-08-24 1983-03-02 Fujitsu Ltd 半導体メモリ
US4488264A (en) * 1982-06-10 1984-12-11 Dshkhunian Valery Transistor storage
DE3381955D1 (de) * 1982-07-26 1990-11-29 Toshiba Kawasaki Kk Halbleiterspeicheranlage mit datenuebertragungs- und erkennungsmitteln.
JPS59126315A (ja) * 1982-12-24 1984-07-20 Fujitsu Ltd 比較回路
US4636664A (en) * 1983-01-10 1987-01-13 Ncr Corporation Current sinking responsive MOS sense amplifier
US4654826A (en) * 1984-08-20 1987-03-31 National Semiconductor Corporation Single device transfer static latch
US4719600A (en) * 1986-02-18 1988-01-12 International Business Machines Corporation Sense circuit for multilevel storage system
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
US4831284A (en) * 1988-03-22 1989-05-16 International Business Machines Corporation Two level differential current switch MESFET logic
JPH0274665A (ja) * 1988-09-10 1990-03-14 Katsuo Shinoda 衣服用生地延反コンベヤ及び該生地の裁断方法
US5023838A (en) * 1988-12-02 1991-06-11 Ncr Corporation Random access memory device with integral logic capability
US5293345A (en) * 1989-06-12 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor memory device having a data detection circuit with two reference potentials
JP2530055B2 (ja) * 1990-08-30 1996-09-04 株式会社東芝 半導体集積回路
JP2680936B2 (ja) * 1991-02-13 1997-11-19 シャープ株式会社 半導体記憶装置
US5272674A (en) * 1992-09-21 1993-12-21 Atmel Corporation High speed memory sense amplifier with noise reduction
US5455802A (en) * 1992-12-22 1995-10-03 Sgs-Thomson Microelectronics, Inc. Dual dynamic sense amplifiers for a memory array
US5982673A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Secondary sense amplifier with window discriminator for self-timed operation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648071A (en) * 1970-02-04 1972-03-07 Nat Semiconductor Corp High-speed mos sense amplifier
US4023122A (en) * 1975-01-28 1977-05-10 Nippon Electric Company, Ltd. Signal generating circuit
US3953839A (en) * 1975-04-10 1976-04-27 International Business Machines Corporation Bit circuitry for enhance-deplete ram
US4094008A (en) * 1976-06-18 1978-06-06 Ncr Corporation Alterable capacitor memory array
US4134151A (en) * 1977-05-02 1979-01-09 Electronic Memories & Magnetics Corporation Single sense line memory cell
US4123799A (en) * 1977-09-19 1978-10-31 Motorola, Inc. High speed IFGET sense amplifier/latch
JPS5914832B2 (ja) * 1977-12-07 1984-04-06 株式会社東芝 電圧センス回路
JPS553210A (en) * 1978-06-21 1980-01-11 Toshiba Corp Waveform shaping circuit
JPS5824874B2 (ja) * 1979-02-07 1983-05-24 富士通株式会社 センス回路

Also Published As

Publication number Publication date
EP0053428A2 (de) 1982-06-09
US4445203A (en) 1984-04-24
JPS5758297A (en) 1982-04-07
EP0227128A2 (de) 1987-07-01
DE3176940D1 (en) 1988-12-22
EP0053428B1 (de) 1988-11-17
EP0227128A3 (en) 1987-10-28
JPS5856198B2 (ja) 1983-12-13
EP0053428A3 (en) 1984-04-04
EP0227128B1 (de) 1990-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee