DE3482979D1 - Halbleiteranordnung mit einem heterouebergang. - Google Patents

Halbleiteranordnung mit einem heterouebergang.

Info

Publication number
DE3482979D1
DE3482979D1 DE8484303165T DE3482979T DE3482979D1 DE 3482979 D1 DE3482979 D1 DE 3482979D1 DE 8484303165 T DE8484303165 T DE 8484303165T DE 3482979 T DE3482979 T DE 3482979T DE 3482979 D1 DE3482979 D1 DE 3482979D1
Authority
DE
Germany
Prior art keywords
heterouition
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484303165T
Other languages
English (en)
Inventor
Yoshifumi Katayama
Yasuhiro Shiraki
Ken Yamaguchi
Yoshimasa Murayama
Yasushi Sawada
Toshiyuki Usagawa
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3482979D1 publication Critical patent/DE3482979D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8484303165T 1983-05-11 1984-05-10 Halbleiteranordnung mit einem heterouebergang. Expired - Lifetime DE3482979D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58080895A JPS59207667A (ja) 1983-05-11 1983-05-11 半導体装置

Publications (1)

Publication Number Publication Date
DE3482979D1 true DE3482979D1 (de) 1990-09-20

Family

ID=13731094

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484303165T Expired - Lifetime DE3482979D1 (de) 1983-05-11 1984-05-10 Halbleiteranordnung mit einem heterouebergang.

Country Status (6)

Country Link
US (1) US4605945A (de)
EP (1) EP0130676B1 (de)
JP (1) JPS59207667A (de)
KR (1) KR920003799B1 (de)
CA (1) CA1208807A (de)
DE (1) DE3482979D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793428B2 (ja) * 1984-10-03 1995-10-09 株式会社日立製作所 半導体装置及びその製造方法
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US5132752A (en) * 1985-05-22 1992-07-21 Hitachi, Ltd. Field effect transistor
DE3689433T2 (de) * 1985-08-20 1994-04-14 Fujitsu Ltd Feldeffekttransistor.
JPH0824131B2 (ja) * 1985-10-07 1996-03-06 株式会社日立製作所 電界効果トランジスタ
JPH084138B2 (ja) * 1986-05-23 1996-01-17 日本電気株式会社 半導体装置
JPH0797636B2 (ja) * 1986-09-30 1995-10-18 株式会社東芝 ヘテロ接合電界効果トランジスタ
US5214298A (en) * 1986-09-30 1993-05-25 Texas Instruments Incorporated Complementary heterostructure field effect transistors
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
JPH01132170A (ja) * 1987-11-18 1989-05-24 Toshiba Corp 電界効果トランジスタ
EP0323249B1 (de) * 1987-12-29 1993-11-03 Nec Corporation Halbleiterkristallstruktur und deren Herstellungsverfahren
EP0348944B1 (de) * 1988-06-28 1997-10-22 Nec Corporation Halbleitervorrichtung mit Verbindungshalbleiterfet mit E/D-Struktur mit hoher Geräuschmarge
US4962050A (en) * 1988-12-06 1990-10-09 Itt Corporation GaAs FET manufacturing process employing channel confining layers
US4987463A (en) * 1989-08-28 1991-01-22 Motorola, Inc. FET having a high trap concentration interface layer
US5276340A (en) * 1989-11-21 1994-01-04 Fujitsu Limited Semiconductor integrated circuit having a reduced side gate effect

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0033037B1 (de) * 1979-12-28 1990-03-21 Fujitsu Limited Halbleitervorrichtungen mit Heteroübergang
CA1179071A (en) * 1981-06-17 1984-12-04 Tadashi Fukuzawa Semiconductor device
JPS58143573A (ja) * 1982-02-22 1983-08-26 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ

Also Published As

Publication number Publication date
EP0130676B1 (de) 1990-08-16
KR840009183A (ko) 1984-12-24
US4605945A (en) 1986-08-12
EP0130676A2 (de) 1985-01-09
CA1208807A (en) 1986-07-29
JPS59207667A (ja) 1984-11-24
EP0130676A3 (en) 1986-08-13
KR920003799B1 (ko) 1992-05-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee