DE3689433T2 - Feldeffekttransistor. - Google Patents
Feldeffekttransistor.Info
- Publication number
- DE3689433T2 DE3689433T2 DE86401845T DE3689433T DE3689433T2 DE 3689433 T2 DE3689433 T2 DE 3689433T2 DE 86401845 T DE86401845 T DE 86401845T DE 3689433 T DE3689433 T DE 3689433T DE 3689433 T2 DE3689433 T2 DE 3689433T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18219885A JPS6242569A (ja) | 1985-08-20 | 1985-08-20 | 電界効果型トランジスタ |
JP21560385A JPS6276565A (ja) | 1985-09-28 | 1985-09-28 | 電界効果型トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689433D1 DE3689433D1 (de) | 1994-02-03 |
DE3689433T2 true DE3689433T2 (de) | 1994-04-14 |
Family
ID=26501084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86401845T Expired - Fee Related DE3689433T2 (de) | 1985-08-20 | 1986-08-20 | Feldeffekttransistor. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5023674A (de) |
EP (1) | EP0214047B1 (de) |
DE (1) | DE3689433T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0314836A1 (de) * | 1987-11-06 | 1989-05-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiteranordnung, insbesondere Heiss-Elektronen-Transistor |
JP2716136B2 (ja) * | 1988-01-14 | 1998-02-18 | 日本電気株式会社 | 半導体装置 |
US5147817A (en) * | 1990-11-16 | 1992-09-15 | Texas Instruments Incorporated | Method for forming programmable resistive element |
US5436470A (en) * | 1991-01-14 | 1995-07-25 | Sumitomo Electric Industries, Ltd. | Field effect transistor |
DE4123939A1 (de) * | 1991-07-19 | 1993-01-21 | Daimler Benz Ag | Heterostruktur-feldeffekttransistor mit pulsdotiertem kanal |
US5219772A (en) * | 1991-08-15 | 1993-06-15 | At&T Bell Laboratories | Method for making field effect devices with ultra-short gates |
US5401980A (en) * | 1991-09-04 | 1995-03-28 | International Business Machines Corporation | 2D/1D junction device as a Coulomb blockade gate |
US5488237A (en) * | 1992-02-14 | 1996-01-30 | Sumitomo Electric Industries, Ltd. | Semiconductor device with delta-doped layer in channel region |
CA2091926A1 (en) * | 1992-03-23 | 1993-09-24 | Shigeru Nakajima | Semiconductor device |
DE4216030A1 (de) * | 1992-05-15 | 1993-11-18 | Forschungszentrum Juelich Gmbh | Elektronisches Bauelement mit wenigstens einem Stromkanal, der ein zweidimensionales Ladungsträgergas enthält |
USH1570H (en) * | 1993-03-31 | 1996-08-06 | The United States Of America As Represented By The Secretary Of The Army | Variable lateral quantum confinement transistor |
GB9325526D0 (en) * | 1993-12-14 | 1994-02-16 | Toshiba Cambridge Res Center | Semiconductor drive |
JPH08250520A (ja) * | 1995-03-14 | 1996-09-27 | Mitsubishi Electric Corp | 電界効果型半導体装置 |
US6365925B2 (en) * | 1997-09-12 | 2002-04-02 | Sony Corporation | Semiconductor device |
JP2000036591A (ja) * | 1998-07-21 | 2000-02-02 | Fujitsu Quantum Device Kk | 半導体装置 |
US6498360B1 (en) * | 2000-02-29 | 2002-12-24 | University Of Connecticut | Coupled-well structure for transport channel in field effect transistors |
TWI257179B (en) * | 2000-07-17 | 2006-06-21 | Fujitsu Quantum Devices Ltd | High-speed compound semiconductor device operable at large output power with minimum leakage current |
GB0206572D0 (en) | 2002-03-20 | 2002-05-01 | Qinetiq Ltd | Field effect transistors |
US6830964B1 (en) * | 2003-06-26 | 2004-12-14 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US6878576B1 (en) * | 2003-06-26 | 2005-04-12 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
GB0415995D0 (en) * | 2004-07-16 | 2004-08-18 | Song Aimin | Memory array |
US8933488B2 (en) * | 2010-12-03 | 2015-01-13 | The Board Of Trustees Of The Leland Stanford Junior Univerity | Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS |
WO2014147706A1 (ja) * | 2013-03-18 | 2014-09-25 | 富士通株式会社 | 半導体装置 |
TWI831148B (zh) * | 2022-03-14 | 2024-02-01 | 超赫科技股份有限公司 | 半導體場效電晶體、包含其之功率放大器以及其製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100577A (ja) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | 半導体装置 |
JPS59111371A (ja) * | 1982-12-16 | 1984-06-27 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
JPS59207667A (ja) * | 1983-05-11 | 1984-11-24 | Hitachi Ltd | 半導体装置 |
DE3480631D1 (de) * | 1983-06-24 | 1990-01-04 | Nec Corp | Halbleiterstruktur mit uebergitter hoher traegerdichte. |
JPS6028273A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置 |
JPS6089979A (ja) * | 1983-10-24 | 1985-05-20 | Fujitsu Ltd | 半導体装置 |
JPH0230182B2 (ja) * | 1984-03-15 | 1990-07-04 | Nippon Electric Co | Handotaisochi |
US4575924A (en) * | 1984-07-02 | 1986-03-18 | Texas Instruments Incorporated | Process for fabricating quantum-well devices utilizing etch and refill techniques |
-
1986
- 1986-08-20 DE DE86401845T patent/DE3689433T2/de not_active Expired - Fee Related
- 1986-08-20 EP EP86401845A patent/EP0214047B1/de not_active Expired - Lifetime
-
1990
- 1990-10-04 US US07/593,502 patent/US5023674A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0214047B1 (de) | 1993-12-22 |
DE3689433D1 (de) | 1994-02-03 |
EP0214047A2 (de) | 1987-03-11 |
US5023674A (en) | 1991-06-11 |
EP0214047A3 (en) | 1988-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |