FR2334170A1 - Memoire morte integree - Google Patents

Memoire morte integree

Info

Publication number
FR2334170A1
FR2334170A1 FR7537358A FR7537358A FR2334170A1 FR 2334170 A1 FR2334170 A1 FR 2334170A1 FR 7537358 A FR7537358 A FR 7537358A FR 7537358 A FR7537358 A FR 7537358A FR 2334170 A1 FR2334170 A1 FR 2334170A1
Authority
FR
France
Prior art keywords
memory built
dead memory
dead
built
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7537358A
Other languages
English (en)
Other versions
FR2334170B1 (fr
Inventor
Jean-Claude Duval
Francis Joseph Mottini
Serge Auguste Touron
Jean-Jacques Rennard
Ruchela Marie Duva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SA
Original Assignee
Societe Industrielle Honeywell Bull
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Industrielle Honeywell Bull filed Critical Societe Industrielle Honeywell Bull
Priority to FR7537358A priority Critical patent/FR2334170A1/fr
Priority to IT29326/76A priority patent/IT1064203B/it
Priority to GB47979/76A priority patent/GB1560749A/en
Priority to US05/746,435 priority patent/US4112505A/en
Priority to NL7613470A priority patent/NL7613470A/xx
Priority to DE19762654950 priority patent/DE2654950A1/de
Priority to JP14486976A priority patent/JPS5271183A/ja
Publication of FR2334170A1 publication Critical patent/FR2334170A1/fr
Application granted granted Critical
Publication of FR2334170B1 publication Critical patent/FR2334170B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
FR7537358A 1975-12-05 1975-12-05 Memoire morte integree Granted FR2334170A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7537358A FR2334170A1 (fr) 1975-12-05 1975-12-05 Memoire morte integree
IT29326/76A IT1064203B (it) 1975-12-05 1976-11-15 Memoria morta integrata
GB47979/76A GB1560749A (en) 1975-12-05 1976-11-17 Integrated programmable read-only memory
US05/746,435 US4112505A (en) 1975-12-05 1976-12-01 Read-only-memory with shunt path to divert programming current
NL7613470A NL7613470A (nl) 1975-12-05 1976-12-02 Geintegreerd permanent geheugen.
DE19762654950 DE2654950A1 (de) 1975-12-05 1976-12-03 Integrierter festwertspeicher
JP14486976A JPS5271183A (en) 1975-12-05 1976-12-03 Integrated read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7537358A FR2334170A1 (fr) 1975-12-05 1975-12-05 Memoire morte integree

Publications (2)

Publication Number Publication Date
FR2334170A1 true FR2334170A1 (fr) 1977-07-01
FR2334170B1 FR2334170B1 (fr) 1980-05-23

Family

ID=9163396

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7537358A Granted FR2334170A1 (fr) 1975-12-05 1975-12-05 Memoire morte integree

Country Status (7)

Country Link
US (1) US4112505A (fr)
JP (1) JPS5271183A (fr)
DE (1) DE2654950A1 (fr)
FR (1) FR2334170A1 (fr)
GB (1) GB1560749A (fr)
IT (1) IT1064203B (fr)
NL (1) NL7613470A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008946A2 (fr) * 1978-09-08 1980-03-19 Fujitsu Limited Dispositif de mémoire à semi-conducteur
FR2456369A1 (fr) * 1979-05-10 1980-12-05 Gen Electric Memoire programmable et procede de programmation
FR2490860A1 (fr) * 1980-09-24 1982-03-26 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
EP0067325A2 (fr) * 1981-06-15 1982-12-22 International Business Machines Corporation Structures programmables

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS59152594A (ja) * 1983-02-21 1984-08-31 Hitachi Ltd 半導体記憶装置
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
JPS62157400A (ja) * 1985-12-27 1987-07-13 Fujitsu Ltd 半導体記憶回路
FR2633420B1 (fr) * 1988-06-28 1992-02-21 Schlumberger Ind Sa Support d'informations et systeme de gestion de tels supports
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6462359B1 (en) * 2001-03-22 2002-10-08 T-Ram, Inc. Stability in thyristor-based memory device
US6891205B1 (en) * 2001-03-22 2005-05-10 T-Ram, Inc. Stability in thyristor-based memory device
US6974200B2 (en) * 2003-11-14 2005-12-13 Lexmark International, Inc. Fuse density on an inkjet printhead chip
US8358526B2 (en) * 2008-02-28 2013-01-22 Contour Semiconductor, Inc. Diagonal connection storage array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3872450A (en) * 1973-06-21 1975-03-18 Motorola Inc Fusible link memory cell for a programmable read only memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008946A2 (fr) * 1978-09-08 1980-03-19 Fujitsu Limited Dispositif de mémoire à semi-conducteur
EP0008946A3 (en) * 1978-09-08 1980-04-02 Fujitsu Limited A semiconductor memory device
FR2456369A1 (fr) * 1979-05-10 1980-12-05 Gen Electric Memoire programmable et procede de programmation
FR2490860A1 (fr) * 1980-09-24 1982-03-26 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
EP0067325A2 (fr) * 1981-06-15 1982-12-22 International Business Machines Corporation Structures programmables
EP0067325A3 (en) * 1981-06-15 1985-12-04 International Business Machines Corporation Programmable structures

Also Published As

Publication number Publication date
JPS5271183A (en) 1977-06-14
GB1560749A (en) 1980-02-06
FR2334170B1 (fr) 1980-05-23
DE2654950A1 (de) 1977-06-23
IT1064203B (it) 1985-02-18
US4112505A (en) 1978-09-05
NL7613470A (nl) 1977-06-07

Similar Documents

Publication Publication Date Title
FR2298160A1 (fr) Memoire semi-conductrice
SE407992B (sv) Halvledarminne
IT1079567B (it) Memoria perfezionata
SE7802625L (sv) Halvledarminne
FR2317733A1 (fr) Matrice de memoire
IT1079558B (it) Memoria perfezionata
IT1055399B (it) Memoria perfezionata
IT1115319B (it) Memoria perfezionata
SE7610137L (sv) Minnessystem
FR2320499A1 (fr) Radiateur portatif
BE840023A (fr) Memoire de commande
BE840021A (fr) Memoire en mode degrade
SE7603038L (sv) Lagerenhet
SE408602B (sv) Matrisminne
FR2334170A1 (fr) Memoire morte integree
BE820274A (fr) Memoire associative
SE422379B (sv) Programminne
FR2311382A1 (fr) Memoire matricielle
AR209507A1 (es) Unidad trituradora
FR2324091A1 (fr) Memoire a condensateurs
SE405292B (sv) Kapacitiv minnescell
BE851845A (fr) Memoire capacitive
FR2304221A1 (fr) Circuit de memoire
BE810109A (fr) Agencement de memoire magnetique
BE842604A (fr) Memoire associative

Legal Events

Date Code Title Description
CD Change of name or company name