FR2304221A1 - Circuit de memoire - Google Patents

Circuit de memoire

Info

Publication number
FR2304221A1
FR2304221A1 FR7607116A FR7607116A FR2304221A1 FR 2304221 A1 FR2304221 A1 FR 2304221A1 FR 7607116 A FR7607116 A FR 7607116A FR 7607116 A FR7607116 A FR 7607116A FR 2304221 A1 FR2304221 A1 FR 2304221A1
Authority
FR
France
Prior art keywords
memory circuit
memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7607116A
Other languages
English (en)
Other versions
FR2304221B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2304221A1 publication Critical patent/FR2304221A1/fr
Application granted granted Critical
Publication of FR2304221B1 publication Critical patent/FR2304221B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
FR7607116A 1975-03-13 1976-03-12 Circuit de memoire Granted FR2304221A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/558,145 US3971004A (en) 1975-03-13 1975-03-13 Memory cell with decoupled supply voltage while writing

Publications (2)

Publication Number Publication Date
FR2304221A1 true FR2304221A1 (fr) 1976-10-08
FR2304221B1 FR2304221B1 (fr) 1982-05-14

Family

ID=24228407

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7607116A Granted FR2304221A1 (fr) 1975-03-13 1976-03-12 Circuit de memoire

Country Status (8)

Country Link
US (1) US3971004A (fr)
JP (1) JPS51115741A (fr)
CA (1) CA1065056A (fr)
DE (1) DE2609714B2 (fr)
FR (1) FR2304221A1 (fr)
GB (1) GB1530008A (fr)
IT (1) IT1056928B (fr)
SE (1) SE402999B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075690A (en) * 1976-03-15 1978-02-21 Rca Corporation Write enhancement circuit
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories
US4149268A (en) * 1977-08-09 1979-04-10 Harris Corporation Dual function memory
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS62165794A (ja) * 1986-01-17 1987-07-22 Toshiba Corp 連想記憶用メモリセル
US6011799A (en) * 1997-02-14 2000-01-04 Advanced Micro Devices, Inc. Method and apparatus for managing external physical layer devices
DE69727581D1 (de) 1997-11-28 2004-03-18 St Microelectronics Srl RAM-Speicherzelle mit niedriger Leistungsaufnahme
US6075721A (en) * 1997-12-18 2000-06-13 Advanced Micro Devices, Inc. Random access memory having bit selectable mask for memory writes
US8654570B2 (en) * 2011-12-29 2014-02-18 Stmicroelectronics International N.V. Low voltage write time enhanced SRAM cell and circuit extensions
US9646681B1 (en) 2016-04-25 2017-05-09 Qualcomm Incorporated Memory cell with improved write margin

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3541531A (en) * 1967-02-07 1970-11-17 Bell Telephone Labor Inc Semiconductive memory array wherein operating power is supplied via information paths
US3549904A (en) * 1968-08-07 1970-12-22 Rca Corp Non-destructive read-out memory cell
US3575617A (en) * 1968-12-27 1971-04-20 Rca Corp Field effect transistor, content addressed memory cell
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3714638A (en) * 1972-03-24 1973-01-30 Rca Corp Circuit for improving operation of semiconductor memory
US3813653A (en) * 1972-12-18 1974-05-28 Rolm Corp Memory cell with reduced voltage supply while writing
FR2226780A1 (fr) * 1973-04-18 1974-11-15 Ibm

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541531A (en) * 1967-02-07 1970-11-17 Bell Telephone Labor Inc Semiconductive memory array wherein operating power is supplied via information paths
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition
US3549904A (en) * 1968-08-07 1970-12-22 Rca Corp Non-destructive read-out memory cell
US3575617A (en) * 1968-12-27 1971-04-20 Rca Corp Field effect transistor, content addressed memory cell
US3644907A (en) * 1969-12-31 1972-02-22 Westinghouse Electric Corp Complementary mosfet memory cell
US3714638A (en) * 1972-03-24 1973-01-30 Rca Corp Circuit for improving operation of semiconductor memory
US3813653A (en) * 1972-12-18 1974-05-28 Rolm Corp Memory cell with reduced voltage supply while writing
FR2226780A1 (fr) * 1973-04-18 1974-11-15 Ibm

Also Published As

Publication number Publication date
IT1056928B (it) 1982-02-20
DE2609714A1 (de) 1976-09-23
JPS51115741A (en) 1976-10-12
SE7602808L (sv) 1976-09-14
SE402999B (sv) 1978-07-24
US3971004A (en) 1976-07-20
DE2609714C3 (fr) 1978-08-17
DE2609714B2 (de) 1977-12-08
JPS5520313B2 (fr) 1980-06-02
FR2304221B1 (fr) 1982-05-14
CA1065056A (fr) 1979-10-23
GB1530008A (en) 1978-10-25

Similar Documents

Publication Publication Date Title
FR2298160A1 (fr) Memoire semi-conductrice
FR2336801A1 (fr) Circuit integre
SE407992B (sv) Halvledarminne
AT359316B (de) Anschlussschaltung
FR2305787A1 (fr) Memoire de commande
IT1055399B (it) Memoria perfezionata
FR2335052A1 (fr) Circuit integre
SE7601968L (sv) Bubbelminne
SE7613319L (sv) Krets
FR2311382A1 (fr) Memoire matricielle
FR2305080A1 (fr) Termineur electronique
FR2300393A1 (fr) Dispositif de memoire
FR2304221A1 (fr) Circuit de memoire
SE409795B (sv) Kopplingskrets
FR2300396A1 (fr) Module de memoire fixe
SE7501418L (sv) Troskelkrets
SE402687B (sv) Logikkrets
BE842604A (fr) Memoire associative
NL7603827A (nl) Geintegreerde schakeling.
FR2333322A1 (fr) Module de memoire
FR2315743A1 (fr) Memoire inalterable
AT336930B (de) Integrierte schaltung
RO76695A (fr) Autocommutateur electronique
NL7603427A (nl) Bekrachtigingscircuit.
BE837996A (fr) Memoire supraconductrice

Legal Events

Date Code Title Description
ST Notification of lapse