IT1056928B - Cella di memoria - Google Patents
Cella di memoriaInfo
- Publication number
- IT1056928B IT1056928B IT20933/76A IT2093376A IT1056928B IT 1056928 B IT1056928 B IT 1056928B IT 20933/76 A IT20933/76 A IT 20933/76A IT 2093376 A IT2093376 A IT 2093376A IT 1056928 B IT1056928 B IT 1056928B
- Authority
- IT
- Italy
- Prior art keywords
- memory cell
- cell
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/558,145 US3971004A (en) | 1975-03-13 | 1975-03-13 | Memory cell with decoupled supply voltage while writing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1056928B true IT1056928B (it) | 1982-02-20 |
Family
ID=24228407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20933/76A IT1056928B (it) | 1975-03-13 | 1976-03-05 | Cella di memoria |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3971004A (it) |
| JP (1) | JPS51115741A (it) |
| CA (1) | CA1065056A (it) |
| DE (1) | DE2609714B2 (it) |
| FR (1) | FR2304221A1 (it) |
| GB (1) | GB1530008A (it) |
| IT (1) | IT1056928B (it) |
| SE (1) | SE402999B (it) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075690A (en) * | 1976-03-15 | 1978-02-21 | Rca Corporation | Write enhancement circuit |
| US4104734A (en) * | 1977-06-30 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Low voltage data retention bias circuitry for volatile memories |
| US4149268A (en) * | 1977-08-09 | 1979-04-10 | Harris Corporation | Dual function memory |
| US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
| JPS62165794A (ja) * | 1986-01-17 | 1987-07-22 | Toshiba Corp | 連想記憶用メモリセル |
| US6011799A (en) * | 1997-02-14 | 2000-01-04 | Advanced Micro Devices, Inc. | Method and apparatus for managing external physical layer devices |
| DE69727581D1 (de) | 1997-11-28 | 2004-03-18 | St Microelectronics Srl | RAM-Speicherzelle mit niedriger Leistungsaufnahme |
| US6075721A (en) * | 1997-12-18 | 2000-06-13 | Advanced Micro Devices, Inc. | Random access memory having bit selectable mask for memory writes |
| US8654570B2 (en) * | 2011-12-29 | 2014-02-18 | Stmicroelectronics International N.V. | Low voltage write time enhanced SRAM cell and circuit extensions |
| US9646681B1 (en) | 2016-04-25 | 2017-05-09 | Qualcomm Incorporated | Memory cell with improved write margin |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3541531A (en) * | 1967-02-07 | 1970-11-17 | Bell Telephone Labor Inc | Semiconductive memory array wherein operating power is supplied via information paths |
| US3541530A (en) * | 1968-01-15 | 1970-11-17 | Ibm | Pulsed power four device memory cell |
| US3549904A (en) * | 1968-08-07 | 1970-12-22 | Rca Corp | Non-destructive read-out memory cell |
| US3575617A (en) * | 1968-12-27 | 1971-04-20 | Rca Corp | Field effect transistor, content addressed memory cell |
| US3644907A (en) * | 1969-12-31 | 1972-02-22 | Westinghouse Electric Corp | Complementary mosfet memory cell |
| US3714638A (en) * | 1972-03-24 | 1973-01-30 | Rca Corp | Circuit for improving operation of semiconductor memory |
| US3813653A (en) * | 1972-12-18 | 1974-05-28 | Rolm Corp | Memory cell with reduced voltage supply while writing |
| US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
-
1975
- 1975-03-13 US US05/558,145 patent/US3971004A/en not_active Expired - Lifetime
-
1976
- 1976-02-26 GB GB7673/76A patent/GB1530008A/en not_active Expired
- 1976-02-27 SE SE7602808A patent/SE402999B/xx unknown
- 1976-03-05 CA CA247,234A patent/CA1065056A/en not_active Expired
- 1976-03-05 IT IT20933/76A patent/IT1056928B/it active
- 1976-03-09 DE DE19762609714 patent/DE2609714B2/de active Granted
- 1976-03-12 FR FR7607116A patent/FR2304221A1/fr active Granted
- 1976-03-12 JP JP51027611A patent/JPS51115741A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2609714A1 (de) | 1976-09-23 |
| JPS51115741A (en) | 1976-10-12 |
| SE7602808L (sv) | 1976-09-14 |
| SE402999B (sv) | 1978-07-24 |
| US3971004A (en) | 1976-07-20 |
| DE2609714C3 (it) | 1978-08-17 |
| FR2304221A1 (fr) | 1976-10-08 |
| DE2609714B2 (de) | 1977-12-08 |
| JPS5520313B2 (it) | 1980-06-02 |
| FR2304221B1 (it) | 1982-05-14 |
| CA1065056A (en) | 1979-10-23 |
| GB1530008A (en) | 1978-10-25 |
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