IT1064162B - Cella di memorizzazione perfezionata - Google Patents
Cella di memorizzazione perfezionataInfo
- Publication number
- IT1064162B IT1064162B IT20662/76A IT2066276A IT1064162B IT 1064162 B IT1064162 B IT 1064162B IT 20662/76 A IT20662/76 A IT 20662/76A IT 2066276 A IT2066276 A IT 2066276A IT 1064162 B IT1064162 B IT 1064162B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- storage cell
- cell
- storage
- perfected storage
- Prior art date
Links
- 210000000352 storage cell Anatomy 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/565,326 US3974486A (en) | 1975-04-07 | 1975-04-07 | Multiplication mode bistable field effect transistor and memory utilizing same |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1064162B true IT1064162B (it) | 1985-02-18 |
Family
ID=24258122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT20662/76A IT1064162B (it) | 1975-04-07 | 1976-02-27 | Cella di memorizzazione perfezionata |
Country Status (6)
Country | Link |
---|---|
US (1) | US3974486A (it) |
JP (1) | JPS51123078A (it) |
DE (1) | DE2613692A1 (it) |
FR (1) | FR2307335A1 (it) |
GB (1) | GB1543074A (it) |
IT (1) | IT1064162B (it) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070652A (en) * | 1975-11-14 | 1978-01-24 | Westinghouse Electric Corporation | Acousto-electric signal convolver, correlator and memory |
JPS586234B2 (ja) * | 1977-11-17 | 1983-02-03 | 富士通株式会社 | 半導体記憶装置 |
GB2060997A (en) * | 1978-01-03 | 1981-05-07 | Erb D M | Stratified charge memory divide |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
JPS59105679U (ja) * | 1982-12-30 | 1984-07-16 | いすゞ自動車株式会社 | 合成樹脂ブロ−成形ダクトの接続構造 |
FR2602367B1 (fr) * | 1986-07-30 | 1988-10-07 | Bull Sa | Procede de memorisation d'un bit d'information dans une cellule de memoire vive statique integree du type mos, transistor pour la mise en oeuvre du procede et memoire en resultant |
US5162877A (en) * | 1987-01-27 | 1992-11-10 | Fujitsu Limited | Semiconductor integrated circuit device and method of producing same |
EP0434850A4 (en) * | 1989-07-18 | 1991-10-02 | Seiko Instruments Inc. | Semiconductor device |
EP1111620A3 (en) * | 1999-12-22 | 2003-01-08 | National University of Ireland, Cork | A negative resistance device |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6724655B2 (en) | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
JP2002289790A (ja) * | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
US6956262B1 (en) | 2001-12-21 | 2005-10-18 | Synopsys Inc. | Charge trapping pull up element |
US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
US6795337B2 (en) * | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
US6853035B1 (en) | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US6979580B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
US9667246B2 (en) * | 2013-10-04 | 2017-05-30 | Peregrine Semiconductor Corporation | Optimized RF switching device architecture for impedance control applications |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3528035A (en) * | 1966-07-11 | 1970-09-08 | Bell Telephone Labor Inc | Two-valley semiconductive devices |
US3538400A (en) * | 1967-07-31 | 1970-11-03 | Nippon Electric Co | Semiconductor gunn effect switching element |
DE2043065A1 (de) * | 1970-08-31 | 1972-03-02 | Merk H | Halbleiter Speicher |
-
1975
- 1975-04-07 US US05/565,326 patent/US3974486A/en not_active Expired - Lifetime
-
1976
- 1976-02-17 FR FR7605142A patent/FR2307335A1/fr active Granted
- 1976-02-27 IT IT20662/76A patent/IT1064162B/it active
- 1976-03-23 JP JP51030927A patent/JPS51123078A/ja active Granted
- 1976-03-24 GB GB11804/76A patent/GB1543074A/en not_active Expired
- 1976-03-31 DE DE19762613692 patent/DE2613692A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB1543074A (en) | 1979-03-28 |
FR2307335B1 (it) | 1978-05-19 |
US3974486A (en) | 1976-08-10 |
FR2307335A1 (fr) | 1976-11-05 |
JPS51123078A (en) | 1976-10-27 |
JPS5534586B2 (it) | 1980-09-08 |
DE2613692A1 (de) | 1976-10-21 |
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