IT1064162B - Cella di memorizzazione perfezionata - Google Patents

Cella di memorizzazione perfezionata

Info

Publication number
IT1064162B
IT1064162B IT20662/76A IT2066276A IT1064162B IT 1064162 B IT1064162 B IT 1064162B IT 20662/76 A IT20662/76 A IT 20662/76A IT 2066276 A IT2066276 A IT 2066276A IT 1064162 B IT1064162 B IT 1064162B
Authority
IT
Italy
Prior art keywords
perfected
storage cell
cell
storage
perfected storage
Prior art date
Application number
IT20662/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1064162B publication Critical patent/IT1064162B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1075Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
IT20662/76A 1975-04-07 1976-02-27 Cella di memorizzazione perfezionata IT1064162B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/565,326 US3974486A (en) 1975-04-07 1975-04-07 Multiplication mode bistable field effect transistor and memory utilizing same

Publications (1)

Publication Number Publication Date
IT1064162B true IT1064162B (it) 1985-02-18

Family

ID=24258122

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20662/76A IT1064162B (it) 1975-04-07 1976-02-27 Cella di memorizzazione perfezionata

Country Status (6)

Country Link
US (1) US3974486A (it)
JP (1) JPS51123078A (it)
DE (1) DE2613692A1 (it)
FR (1) FR2307335A1 (it)
GB (1) GB1543074A (it)
IT (1) IT1064162B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070652A (en) * 1975-11-14 1978-01-24 Westinghouse Electric Corporation Acousto-electric signal convolver, correlator and memory
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
GB2060997A (en) * 1978-01-03 1981-05-07 Erb D M Stratified charge memory divide
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
JPS59105679U (ja) * 1982-12-30 1984-07-16 いすゞ自動車株式会社 合成樹脂ブロ−成形ダクトの接続構造
FR2602367B1 (fr) * 1986-07-30 1988-10-07 Bull Sa Procede de memorisation d'un bit d'information dans une cellule de memoire vive statique integree du type mos, transistor pour la mise en oeuvre du procede et memoire en resultant
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
EP0434850A4 (en) * 1989-07-18 1991-10-02 Seiko Instruments Inc. Semiconductor device
EP1111620A3 (en) * 1999-12-22 2003-01-08 National University of Ireland, Cork A negative resistance device
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
JP2002289790A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) * 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US9667246B2 (en) * 2013-10-04 2017-05-30 Peregrine Semiconductor Corporation Optimized RF switching device architecture for impedance control applications

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528035A (en) * 1966-07-11 1970-09-08 Bell Telephone Labor Inc Two-valley semiconductive devices
US3538400A (en) * 1967-07-31 1970-11-03 Nippon Electric Co Semiconductor gunn effect switching element
DE2043065A1 (de) * 1970-08-31 1972-03-02 Merk H Halbleiter Speicher

Also Published As

Publication number Publication date
GB1543074A (en) 1979-03-28
FR2307335B1 (it) 1978-05-19
US3974486A (en) 1976-08-10
FR2307335A1 (fr) 1976-11-05
JPS51123078A (en) 1976-10-27
JPS5534586B2 (it) 1980-09-08
DE2613692A1 (de) 1976-10-21

Similar Documents

Publication Publication Date Title
IT1064162B (it) Cella di memorizzazione perfezionata
IT1064710B (it) Cella elettrochimica
IT1042692B (it) Cella di memoria perfzionata
SE430282B (sv) Icke-vattenhaltig elektrokemisk cell
IT1115344B (it) Cella di memoria capacitiva perfezionata
SE419148B (sv) Oavbrytbar effektkella
IT1072658B (it) Cella bipolare
IT1064414B (it) Dispositivo di immagazzinamento
IT1063881B (it) Cella di memoria perfezionata
BR7602279A (pt) Celula eletrolitica
SE390088B (sv) Slutet ackumulatorbatteri
IT1064185B (it) Apparecchiatura di memorizzazione
IT1149266B (it) Cella di memoria perfezionata
SE7603038L (sv) Lagerenhet
NL7601509A (nl) Galvanische cel.
IT1066593B (it) Batteria
SE7602996L (sv) Sekunderbattri
IT1074024B (it) Apparecchiatura di memorizzazione perfezionata
NO148656C (no) Akkumulatorcelle.
BR7505179A (pt) Celula eletrolitica aperfeicoada
IT1081164B (it) Cella elettrochimica perfezionata
IT1085689B (it) Cella elettrolitica
SE7602995L (sv) Sekunderbatteri
SE425451B (sv) Plantcellbatteri
IT1054574B (it) Cella elettrolitica