FR2311382A1 - Memoire matricielle - Google Patents

Memoire matricielle

Info

Publication number
FR2311382A1
FR2311382A1 FR7614040A FR7614040A FR2311382A1 FR 2311382 A1 FR2311382 A1 FR 2311382A1 FR 7614040 A FR7614040 A FR 7614040A FR 7614040 A FR7614040 A FR 7614040A FR 2311382 A1 FR2311382 A1 FR 2311382A1
Authority
FR
France
Prior art keywords
matrix memory
matrix
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7614040A
Other languages
English (en)
Other versions
FR2311382B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2311382A1 publication Critical patent/FR2311382A1/fr
Application granted granted Critical
Publication of FR2311382B1 publication Critical patent/FR2311382B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
FR7614040A 1975-05-13 1976-05-11 Memoire matricielle Granted FR2311382A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57714275A 1975-05-13 1975-05-13

Publications (2)

Publication Number Publication Date
FR2311382A1 true FR2311382A1 (fr) 1976-12-10
FR2311382B1 FR2311382B1 (fr) 1981-12-31

Family

ID=24307446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7614040A Granted FR2311382A1 (fr) 1975-05-13 1976-05-11 Memoire matricielle

Country Status (6)

Country Link
JP (1) JPS51140442A (fr)
DE (1) DE2620749B2 (fr)
FR (1) FR2311382A1 (fr)
GB (1) GB1497210A (fr)
IT (1) IT1060445B (fr)
NL (1) NL7605024A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2369651A1 (fr) * 1976-10-28 1978-05-26 Sperry Rand Corp Circuit de commande de memoire
FR2397696A1 (fr) * 1977-07-13 1979-02-09 Sharp Kk Dispositif d'affichage electroluminescent
EP0023271A1 (fr) * 1979-07-30 1981-02-04 International Business Machines Corporation Clavier d'entrée de données à touches à impédance variable contrôlé par microprocesseur
FR2468973A1 (fr) * 1979-11-01 1981-05-08 Texas Instruments Inc Circuit de detection differentielle pour une matrice de memoire a sortie monopolaire
EP0031643B1 (fr) * 1979-12-04 1984-06-13 Fujitsu Limited Dispositif de mémoire à semi-conducteurs

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method
JPS56156985A (en) * 1980-02-04 1981-12-03 Texas Instruments Inc Decoder
DE3153700C2 (fr) * 1980-02-04 1993-01-28 Texas Instruments Inc., Dallas, Tex., Us
JPS589286A (ja) * 1981-07-10 1983-01-19 Toshiba Corp 不揮発性半導体メモリ
JPS5817594A (ja) * 1981-07-23 1983-02-01 Seiko Epson Corp 半導体記憶装置
JPS58208990A (ja) * 1982-05-28 1983-12-05 Nec Corp 記憶装置
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置
JPS61184794A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 半導体記憶装置
JPS6280899A (ja) * 1985-10-04 1987-04-14 Mitsubishi Electric Corp 半導体記憶装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2369651A1 (fr) * 1976-10-28 1978-05-26 Sperry Rand Corp Circuit de commande de memoire
FR2397696A1 (fr) * 1977-07-13 1979-02-09 Sharp Kk Dispositif d'affichage electroluminescent
EP0023271A1 (fr) * 1979-07-30 1981-02-04 International Business Machines Corporation Clavier d'entrée de données à touches à impédance variable contrôlé par microprocesseur
US4305135A (en) 1979-07-30 1981-12-08 International Business Machines Corp. Program controlled capacitive keyboard variable threshold sensing system
FR2468973A1 (fr) * 1979-11-01 1981-05-08 Texas Instruments Inc Circuit de detection differentielle pour une matrice de memoire a sortie monopolaire
EP0031643B1 (fr) * 1979-12-04 1984-06-13 Fujitsu Limited Dispositif de mémoire à semi-conducteurs

Also Published As

Publication number Publication date
FR2311382B1 (fr) 1981-12-31
DE2620749A1 (de) 1976-11-25
GB1497210A (en) 1978-01-05
NL7605024A (nl) 1976-11-16
DE2620749B2 (de) 1977-10-27
JPS51140442A (en) 1976-12-03
IT1060445B (it) 1982-08-20

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Legal Events

Date Code Title Description
ST Notification of lapse