FR2468973A1 - Circuit de detection differentielle pour une matrice de memoire a sortie monopolaire - Google Patents
Circuit de detection differentielle pour une matrice de memoire a sortie monopolaireInfo
- Publication number
- FR2468973A1 FR2468973A1 FR8023315A FR8023315A FR2468973A1 FR 2468973 A1 FR2468973 A1 FR 2468973A1 FR 8023315 A FR8023315 A FR 8023315A FR 8023315 A FR8023315 A FR 8023315A FR 2468973 A1 FR2468973 A1 FR 2468973A1
- Authority
- FR
- France
- Prior art keywords
- detection circuit
- differential detection
- output memory
- memory matrix
- pole output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Abstract
L'invention concerne un circuit de détection différentielle de matrice de mémoire à sortie monopolaire. Une entrée d'un amplificateur différentiel 35 est connectée à des lignes 18 de sortie de colonnes par un sélecteur 19. L'autre entrée de l'amplificateur différentiel est connectée à un point de référence 34' dont la tension est fixée par une cellule de mémoire fictive semblable aux cellules de mémoire de la matrice. L'invention s'applique notamment à des mémoires permanentes, programmables électriquement ou non.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/090,381 US4301518A (en) | 1979-11-01 | 1979-11-01 | Differential sensing of single ended memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2468973A1 true FR2468973A1 (fr) | 1981-05-08 |
FR2468973B1 FR2468973B1 (fr) | 1986-11-28 |
Family
ID=22222542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8023315A Expired FR2468973B1 (fr) | 1979-11-01 | 1980-10-31 | Circuit de detection differentielle pour une matrice de memoire a sortie monopolaire |
Country Status (4)
Country | Link |
---|---|
US (1) | US4301518A (fr) |
JP (1) | JPS56134387A (fr) |
DE (1) | DE3041176A1 (fr) |
FR (1) | FR2468973B1 (fr) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
JPS5942399B2 (ja) * | 1979-12-21 | 1984-10-15 | 株式会社日立製作所 | メモリ装置 |
US4387447A (en) * | 1980-02-04 | 1983-06-07 | Texas Instruments Incorporated | Column and ground select sequence in electrically programmable memory |
JPS5856199B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
US4393475A (en) * | 1981-01-27 | 1983-07-12 | Texas Instruments Incorporated | Non-volatile semiconductor memory and the testing method for the same |
US4386420A (en) * | 1981-10-19 | 1983-05-31 | Fairchild Camera And Instrument Corp. | Dynamic read reference voltage generator |
JPS58108764A (ja) * | 1981-12-22 | 1983-06-28 | Nec Corp | 半導体装置 |
US4460985A (en) * | 1982-02-19 | 1984-07-17 | International Business Machines Corporation | Sense amplifier for MOS static memory array |
JPS5968897A (ja) * | 1982-10-12 | 1984-04-18 | Hitachi Ltd | Eprom装置用センスアンプ |
JPS5979492A (ja) * | 1982-10-29 | 1984-05-08 | Hitachi Micro Comput Eng Ltd | Eprom装置 |
JPS5998394A (ja) * | 1982-11-26 | 1984-06-06 | Hitachi Ltd | 半導体記憶装置 |
JPS59117787A (ja) * | 1982-12-24 | 1984-07-07 | Hitachi Ltd | Eprom装置 |
DE3482724D1 (de) * | 1983-04-07 | 1990-08-23 | Toshiba Kawasaki Kk | Festwertspeicher. |
EP0139185A3 (fr) * | 1983-09-09 | 1987-02-04 | Exel Microelectronics, Inc. | Dispositif de mémoire très rapide et sa méthode d'opération |
JPS60150297A (ja) * | 1984-01-13 | 1985-08-07 | Nec Corp | 記憶装置 |
US4725984A (en) * | 1984-02-21 | 1988-02-16 | Seeq Technology, Inc. | CMOS eprom sense amplifier |
US4701885A (en) * | 1984-07-26 | 1987-10-20 | Texas Instruments Incorporated | Dynamic memory array with quasi-folded bit lines |
US4908797A (en) * | 1984-07-26 | 1990-03-13 | Texas Instruments Incorporated | Dynamic memory array with quasi-folded bit lines |
JPS6173300A (ja) * | 1984-09-17 | 1986-04-15 | Toshiba Corp | 半導体記憶装置 |
JPS61172300A (ja) * | 1985-01-26 | 1986-08-02 | Toshiba Corp | 半導体記憶装置 |
US4654831A (en) * | 1985-04-11 | 1987-03-31 | Advanced Micro Devices, Inc. | High speed CMOS current sense amplifier |
US4722075A (en) * | 1985-10-15 | 1988-01-26 | Texas Instruments Incorporated | Equalized biased array for PROMS and EPROMS |
US4713797A (en) * | 1985-11-25 | 1987-12-15 | Motorola Inc. | Current mirror sense amplifier for a non-volatile memory |
DE3685206D1 (de) * | 1985-12-24 | 1992-06-11 | Raytheon Co | Hochdichter festwertspeicher. |
US4901285A (en) * | 1985-12-24 | 1990-02-13 | Raytheon Company | High density read-only memory |
US5612557A (en) * | 1986-10-27 | 1997-03-18 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
US5345420A (en) * | 1986-10-27 | 1994-09-06 | Seiko Epson Corporation | Semiconductor memory device |
US4931996A (en) * | 1986-10-27 | 1990-06-05 | Seiko Epson Corporation | Semiconductor memory device |
US5191402A (en) * | 1986-10-27 | 1993-03-02 | Seiko Epson Corporation | Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
US4763026A (en) * | 1987-04-09 | 1988-08-09 | National Semiconductor Corporation | Sense amplifier for single-ended data sensing |
JP2617189B2 (ja) * | 1987-08-03 | 1997-06-04 | 沖電気工業株式会社 | 電流検出回路 |
US4903237A (en) * | 1988-08-02 | 1990-02-20 | Catalyst Semiconductor, Inc. | Differential sense amplifier circuit for high speed ROMS, and flash memory devices |
JP2573335B2 (ja) * | 1988-11-09 | 1997-01-22 | 株式会社東芝 | 不揮発性メモリ |
US5262846A (en) * | 1988-11-14 | 1993-11-16 | Texas Instruments Incorporated | Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates |
JP2601903B2 (ja) * | 1989-04-25 | 1997-04-23 | 株式会社東芝 | 半導体記憶装置 |
DE69031276T2 (de) * | 1989-06-12 | 1998-01-15 | Toshiba Kawasaki Kk | Halbleiterspeicheranordnung |
GB2232798B (en) * | 1989-06-12 | 1994-02-23 | Intel Corp | Electrically programmable read-only memory |
US5293345A (en) * | 1989-06-12 | 1994-03-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a data detection circuit with two reference potentials |
JPH0377021A (ja) * | 1989-08-18 | 1991-04-02 | Tokico Ltd | 質量流量計 |
US5023837A (en) * | 1989-09-05 | 1991-06-11 | Texas Instruments Incorporated | Bitline segmentation in logic arrays |
US5065364A (en) * | 1989-09-15 | 1991-11-12 | Intel Corporation | Apparatus for providing block erasing in a flash EPROM |
EP0424172B1 (fr) * | 1989-10-20 | 1995-01-18 | Fujitsu Limited | Appareil de mémorisation non volatile à semi-conducteurs |
EP0432481A3 (en) * | 1989-12-14 | 1992-04-29 | Texas Instruments Incorporated | Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells |
US5057446A (en) * | 1990-08-06 | 1991-10-15 | Texas Instruments Incorporated | Method of making an EEPROM with improved capacitive coupling between control gate and floating gate |
JPH04119597A (ja) * | 1990-09-07 | 1992-04-21 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置のセンスアンプ |
US5132933A (en) * | 1990-12-21 | 1992-07-21 | Schreck John F | Bias circuitry for nonvolatile memory array |
US5559455A (en) * | 1994-12-23 | 1996-09-24 | Lucent Technologies Inc. | Sense amplifier with overvoltage protection |
US5638322A (en) * | 1995-07-19 | 1997-06-10 | Cypress Semiconductor Corp. | Apparatus and method for improving common mode noise rejection in pseudo-differential sense amplifiers |
JPH10320989A (ja) | 1997-05-16 | 1998-12-04 | Toshiba Microelectron Corp | 不揮発性半導体メモリ |
JP2004095048A (ja) * | 2002-08-30 | 2004-03-25 | Toshiba Corp | 不揮発性半導体メモリ |
DE102008014123B4 (de) | 2008-03-13 | 2015-09-03 | Austriamicrosystems Ag | Speicher mit Sense-Amplifier und Referenzstromerzeugung |
US20110128807A1 (en) * | 2009-12-01 | 2011-06-02 | Freescale Semiconductor, Inc | Memory device and sense circuitry therefor |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
FR2239736A1 (en) * | 1973-08-03 | 1975-02-28 | Nat Semiconductor Corp | Memory circuit with individual transistor storage cells - is connected with multiple lead to form storage line |
US3938108A (en) * | 1975-02-03 | 1976-02-10 | Intel Corporation | Erasable programmable read-only memory |
FR2311382A1 (fr) * | 1975-05-13 | 1976-12-10 | Ncr Co | Memoire matricielle |
US4090257A (en) * | 1976-06-28 | 1978-05-16 | Westinghouse Electric Corp. | Dual mode MNOS memory with paired columns and differential sense circuit |
US4094008A (en) * | 1976-06-18 | 1978-06-06 | Ncr Corporation | Alterable capacitor memory array |
US4138737A (en) * | 1978-03-08 | 1979-02-06 | Westinghouse Electric Corp. | Non-volatile memory with improved readout |
FR2468972A1 (fr) * | 1979-10-29 | 1981-05-08 | Texas Instruments Inc | Matrice de memoire permanente programmable ou non, a masse virtuelle |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3992701A (en) * | 1975-04-10 | 1976-11-16 | International Business Machines Corporation | Non-volatile memory cell and array using substrate current |
-
1979
- 1979-11-01 US US06/090,381 patent/US4301518A/en not_active Expired - Lifetime
-
1980
- 1980-10-31 DE DE19803041176 patent/DE3041176A1/de active Granted
- 1980-10-31 JP JP15366680A patent/JPS56134387A/ja active Granted
- 1980-10-31 FR FR8023315A patent/FR2468973B1/fr not_active Expired
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
FR2239736A1 (en) * | 1973-08-03 | 1975-02-28 | Nat Semiconductor Corp | Memory circuit with individual transistor storage cells - is connected with multiple lead to form storage line |
US3938108A (en) * | 1975-02-03 | 1976-02-10 | Intel Corporation | Erasable programmable read-only memory |
FR2311382A1 (fr) * | 1975-05-13 | 1976-12-10 | Ncr Co | Memoire matricielle |
US4094008A (en) * | 1976-06-18 | 1978-06-06 | Ncr Corporation | Alterable capacitor memory array |
US4090257A (en) * | 1976-06-28 | 1978-05-16 | Westinghouse Electric Corp. | Dual mode MNOS memory with paired columns and differential sense circuit |
US4138737A (en) * | 1978-03-08 | 1979-02-06 | Westinghouse Electric Corp. | Non-volatile memory with improved readout |
FR2468972A1 (fr) * | 1979-10-29 | 1981-05-08 | Texas Instruments Inc | Matrice de memoire permanente programmable ou non, a masse virtuelle |
Non-Patent Citations (1)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 15, no. 9, février 1973, pages 2890-2891, New York, US; J.R. DAILEY et al.: "Universal matrix coder" * |
Also Published As
Publication number | Publication date |
---|---|
DE3041176A1 (de) | 1981-09-24 |
DE3041176C2 (fr) | 1989-10-05 |
FR2468973B1 (fr) | 1986-11-28 |
JPS56134387A (en) | 1981-10-21 |
JPS6348118B2 (fr) | 1988-09-27 |
US4301518A (en) | 1981-11-17 |
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