JPS53114625A - Amplifier circuit - Google Patents

Amplifier circuit

Info

Publication number
JPS53114625A
JPS53114625A JP2983177A JP2983177A JPS53114625A JP S53114625 A JPS53114625 A JP S53114625A JP 2983177 A JP2983177 A JP 2983177A JP 2983177 A JP2983177 A JP 2983177A JP S53114625 A JPS53114625 A JP S53114625A
Authority
JP
Japan
Prior art keywords
amplifier circuit
nodes
amplifies
difference
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2983177A
Other languages
Japanese (ja)
Other versions
JPS5935114B2 (en
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52029831A priority Critical patent/JPS5935114B2/en
Publication of JPS53114625A publication Critical patent/JPS53114625A/en
Publication of JPS5935114B2 publication Critical patent/JPS5935114B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4093Input/output [I/O] data interface arrangements, e.g. data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make a high integration and a mass capacity of a memory circuit possible and improve sensitivity in the FF-type amplifier circuit which amplifies the difference of potential applied to the first and the second nodes and outputs complementary signals to the first and the second nodes.
JP52029831A 1977-03-17 1977-03-17 Width increase circuit Expired JPS5935114B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52029831A JPS5935114B2 (en) 1977-03-17 1977-03-17 Width increase circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52029831A JPS5935114B2 (en) 1977-03-17 1977-03-17 Width increase circuit

Publications (2)

Publication Number Publication Date
JPS53114625A true JPS53114625A (en) 1978-10-06
JPS5935114B2 JPS5935114B2 (en) 1984-08-27

Family

ID=12286963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52029831A Expired JPS5935114B2 (en) 1977-03-17 1977-03-17 Width increase circuit

Country Status (1)

Country Link
JP (1) JPS5935114B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
JPS61184794A (en) * 1985-02-13 1986-08-18 Toshiba Corp Semiconductor memory device
USRE37593E1 (en) 1988-06-17 2002-03-19 Hitachi, Ltd. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JP2006179048A (en) * 2004-12-21 2006-07-06 Sanyo Electric Co Ltd Semiconductor device
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US9472330B2 (en) 2013-10-10 2016-10-18 Hyundai Heavy Industries Co., Ltd. High speed solenoid

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
JPS6145316B2 (en) * 1977-10-18 1986-10-07 Fujitsu Ltd
JPS61184794A (en) * 1985-02-13 1986-08-18 Toshiba Corp Semiconductor memory device
JPH0453040B2 (en) * 1985-02-13 1992-08-25 Tokyo Shibaura Electric Co
USRE37593E1 (en) 1988-06-17 2002-03-19 Hitachi, Ltd. Large scale integrated circuit with sense amplifier circuits for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JP2006179048A (en) * 2004-12-21 2006-07-06 Sanyo Electric Co Ltd Semiconductor device
US9472330B2 (en) 2013-10-10 2016-10-18 Hyundai Heavy Industries Co., Ltd. High speed solenoid

Also Published As

Publication number Publication date
JPS5935114B2 (en) 1984-08-27

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