JPS53108736A - Amplifier circuit - Google Patents
Amplifier circuitInfo
- Publication number
- JPS53108736A JPS53108736A JP2359377A JP2359377A JPS53108736A JP S53108736 A JPS53108736 A JP S53108736A JP 2359377 A JP2359377 A JP 2359377A JP 2359377 A JP2359377 A JP 2359377A JP S53108736 A JPS53108736 A JP S53108736A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier circuit
- output nodes
- couple
- sensitivity
- causing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Abstract
PURPOSE:To obtain the high-sensitivity and high-speed amplifier circuit, by causing the method precharging output nodes to have gate threshold characteristics of the depletion type when the amplified difference voltage of input signals is supplied to a couple of output nodes as a complementary signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52023593A JPS5947388B2 (en) | 1977-03-04 | 1977-03-04 | Width increase circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52023593A JPS5947388B2 (en) | 1977-03-04 | 1977-03-04 | Width increase circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53108736A true JPS53108736A (en) | 1978-09-21 |
JPS5947388B2 JPS5947388B2 (en) | 1984-11-19 |
Family
ID=12114871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52023593A Expired JPS5947388B2 (en) | 1977-03-04 | 1977-03-04 | Width increase circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5947388B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5451736A (en) * | 1977-09-19 | 1979-04-23 | Motorola Inc | High speed sense amplification latch circuit for insulated gate fet |
JPS5522217A (en) * | 1978-07-28 | 1980-02-16 | Fujitsu Ltd | Reset circuit |
JPS58177593A (en) * | 1982-04-09 | 1983-10-18 | Toshiba Corp | Semiconductor storage device |
JPS5965996A (en) * | 1982-10-06 | 1984-04-14 | Matsushita Electronics Corp | Semiconductor storage device |
JPS6252790A (en) * | 1985-08-30 | 1987-03-07 | Toshiba Corp | Sense amplifier system for semiconductor memory |
JPS63227107A (en) * | 1987-02-24 | 1988-09-21 | エスジェーエス―トムソン ミクロエレクトロニクス ソシエテ アノニム | Reading amplifier for memory |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0140463Y2 (en) * | 1985-05-09 | 1989-12-04 |
-
1977
- 1977-03-04 JP JP52023593A patent/JPS5947388B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5451736A (en) * | 1977-09-19 | 1979-04-23 | Motorola Inc | High speed sense amplification latch circuit for insulated gate fet |
JPS5522217A (en) * | 1978-07-28 | 1980-02-16 | Fujitsu Ltd | Reset circuit |
JPS5827915B2 (en) * | 1978-07-28 | 1983-06-13 | 富士通株式会社 | reset circuit |
JPS58177593A (en) * | 1982-04-09 | 1983-10-18 | Toshiba Corp | Semiconductor storage device |
JPH0410155B2 (en) * | 1982-04-09 | 1992-02-24 | ||
JPS5965996A (en) * | 1982-10-06 | 1984-04-14 | Matsushita Electronics Corp | Semiconductor storage device |
JPS6252790A (en) * | 1985-08-30 | 1987-03-07 | Toshiba Corp | Sense amplifier system for semiconductor memory |
JPS63227107A (en) * | 1987-02-24 | 1988-09-21 | エスジェーエス―トムソン ミクロエレクトロニクス ソシエテ アノニム | Reading amplifier for memory |
Also Published As
Publication number | Publication date |
---|---|
JPS5947388B2 (en) | 1984-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |